Charge trapping effects represent a major challenge in the performance evaluation and the measurement-based compact modeling of modern short-gate-length (i.e., ≤0.15 µm) Gallium Nitride (GaN) high-electron mobility transistors (HEMT) technology for millimeter-wave applications. In this work, we propose a comprehensive experimental methodology based on multi-bias large-signal transient measurements, useful to characterize charge-trapping dynamics in terms of both capture and release mechanisms across the whole device safe operating area (SOA). From this dataset, characterizations, such as static-IV, pulsed-IV, and trapping time constants, are seamlessly extracted, thus allowing for the separation of trapping and thermal phenomena and delivering a complete basis for measurement-based compact modeling. The approach is applied to different state-of-the-art GaN HEMT commercial technologies, providing a comparative analysis of the measured effects.

Trapping dynamics in gan hemts for millimeter-wave applications: Measurement-based characterization and technology comparison

Angelotti A. M.
;
Gibiino G. P.;Florian C.;Santarelli A.
2021

Abstract

Charge trapping effects represent a major challenge in the performance evaluation and the measurement-based compact modeling of modern short-gate-length (i.e., ≤0.15 µm) Gallium Nitride (GaN) high-electron mobility transistors (HEMT) technology for millimeter-wave applications. In this work, we propose a comprehensive experimental methodology based on multi-bias large-signal transient measurements, useful to characterize charge-trapping dynamics in terms of both capture and release mechanisms across the whole device safe operating area (SOA). From this dataset, characterizations, such as static-IV, pulsed-IV, and trapping time constants, are seamlessly extracted, thus allowing for the separation of trapping and thermal phenomena and delivering a complete basis for measurement-based compact modeling. The approach is applied to different state-of-the-art GaN HEMT commercial technologies, providing a comparative analysis of the measured effects.
Angelotti A.M.; Gibiino G.P.; Florian C.; Santarelli A.
File in questo prodotto:
File Dimensione Formato  
electronics-10-00137-v2.pdf

accesso aperto

Tipo: Versione (PDF) editoriale
Licenza: Creative commons
Dimensione 8.66 MB
Formato Adobe PDF
8.66 MB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/801186
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 6
  • ???jsp.display-item.citation.isi??? 7
social impact