Nonlinear RF Modeling of GaN HEMTs with Fermi Kinetics Transport and the ASM-HEMT Compact Model [Young Professionals]

Gallium nitride (GaN) HEMTs are a key technological component in current and next-generation RF and millimeter-wave (mm-wave) integrated circuits and subsystems. Applications where GaN has made considerable impact include radar, communications, satellite communications, and electronic warfare. A critical aspect of the RF design cycle is accurate modeling of the GaN HEMTs. Modeling of the transistors can take two significantly different forms: one referred to as technology computer-aided design (TCAD) and the other called physics-based compact modeling. These subjects were the basis of the 'Best Presentation' winning talk at the IEEE Microwave Theory and Technology Design Automation Committee [Technical Committee 2 (TC-2)] Modeling and Optimization Workshop, where the modeling research at the Air Force Research Laboratory (AFRL) was discussed. Namely, AFRL's custom TCAD solver called Fermi kinetics transport (FKT) [1] and physics-based compact modeling using the Advanced SPICE Model for HEMTs (ASM-HEMT) [2] were presented. This article provides an overview of the physics-based modeling efforts at AFRL.