Gallium nitride (GaN) HEMTs are a key technological component in current and next-generation RF and millimeter-wave (mm-wave) integrated circuits and subsystems. Applications where GaN has made considerable impact include radar, communications, satellite communications, and electronic warfare. A critical aspect of the RF design cycle is accurate modeling of the GaN HEMTs. Modeling of the transistors can take two significantly different forms: one referred to as technology computer-aided design (TCAD) and the other called physics-based compact modeling. These subjects were the basis of the 'Best Presentation' winning talk at the IEEE Microwave Theory and Technology Design Automation Committee [Technical Committee 2 (TC-2)] Modeling and Optimization Workshop, where the modeling research at the Air Force Research Laboratory (AFRL) was discussed. Namely, AFRL's custom TCAD solver called Fermi kinetics transport (FKT) [1] and physics-based compact modeling using the Advanced SPICE Model for HEMTs (ASM-HEMT) [2] were presented. This article provides an overview of the physics-based modeling efforts at AFRL.

Nonlinear RF Modeling of GaN HEMTs with Fermi Kinetics Transport and the ASM-HEMT Compact Model [Young Professionals]

Gibiino G. P.;
2024

Abstract

Gallium nitride (GaN) HEMTs are a key technological component in current and next-generation RF and millimeter-wave (mm-wave) integrated circuits and subsystems. Applications where GaN has made considerable impact include radar, communications, satellite communications, and electronic warfare. A critical aspect of the RF design cycle is accurate modeling of the GaN HEMTs. Modeling of the transistors can take two significantly different forms: one referred to as technology computer-aided design (TCAD) and the other called physics-based compact modeling. These subjects were the basis of the 'Best Presentation' winning talk at the IEEE Microwave Theory and Technology Design Automation Committee [Technical Committee 2 (TC-2)] Modeling and Optimization Workshop, where the modeling research at the Air Force Research Laboratory (AFRL) was discussed. Namely, AFRL's custom TCAD solver called Fermi kinetics transport (FKT) [1] and physics-based compact modeling using the Advanced SPICE Model for HEMTs (ASM-HEMT) [2] were presented. This article provides an overview of the physics-based modeling efforts at AFRL.
2024
Miller N.C.; Grupen M.; Gibiino G.P.; King J.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/951213
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