Experimental evaluation of Hall-effect current sensors in BCD10 technology

A new version of the X-Hall broadband current sensor implemented in the BCD10 process by STMicrolectronics is experimentally characterized by means of static, magnetic, and thermal measurements. The results are comparatively assessed against the same topology implemented in a previous BCD generation as well as against a reference square-Hall sensor in the same BCD10 process and operated under the spinning current technique. The sensors realized in BCD10 technology are here presented for the first time. This experimental study demonstrates that the BCD10 technology generally improves sensor sensitivity for all the topologies under analysis. In particular, it offers a 10% increase of the current-to-magnetic field transduction factor, and almost a two-fold improvement of the current-related sensitivity for the X-Hall sensor.