This work describes an on-wafer measurement architecture tailored to the broadband pulsed characterization of radio-frequency (RF) power field-effect transistors (FETs). Based on a 50-Ω environment and corresponding wave-variable domain representation, the set-up exploits the impedance matching and the broadband feature of its components, together with a full-bandwidth calibration, for the synthesis and measurement of pulsed waveforms with short pulse rise/fall times in the order of a few ns, while guaranteeing a reduced risk of oscillations. These measurement capabilities are particularly suited for experimentally assessing the FET performance reduction due to low-frequency dispersive effects caused by thermal and charge trapping phenomena. The flexibility of the set-up is showcased by discussing experimental examples of different measurement techniques in the kHz-to-GHz range, including single- and double-pulsed I–V characteristics and S-parameters, as well as pulsed continuous-wave (CW) measurements, performed on state-of-the-art gallium nitride (GaN) RF FETs for microwave and millimeter-wave applications.

Gibiino G.P., Santarelli A., Traverso P.A. (2021). Pulsed techniques for the characterization of low-frequency dispersive effects in RF power FETs using a flexible measurement set-up. MEASUREMENT, 176, N/A-N/A [10.1016/j.measurement.2021.109240].

Pulsed techniques for the characterization of low-frequency dispersive effects in RF power FETs using a flexible measurement set-up

Gibiino G. P.;Santarelli A.;Traverso P. A.
2021

Abstract

This work describes an on-wafer measurement architecture tailored to the broadband pulsed characterization of radio-frequency (RF) power field-effect transistors (FETs). Based on a 50-Ω environment and corresponding wave-variable domain representation, the set-up exploits the impedance matching and the broadband feature of its components, together with a full-bandwidth calibration, for the synthesis and measurement of pulsed waveforms with short pulse rise/fall times in the order of a few ns, while guaranteeing a reduced risk of oscillations. These measurement capabilities are particularly suited for experimentally assessing the FET performance reduction due to low-frequency dispersive effects caused by thermal and charge trapping phenomena. The flexibility of the set-up is showcased by discussing experimental examples of different measurement techniques in the kHz-to-GHz range, including single- and double-pulsed I–V characteristics and S-parameters, as well as pulsed continuous-wave (CW) measurements, performed on state-of-the-art gallium nitride (GaN) RF FETs for microwave and millimeter-wave applications.
2021
Gibiino G.P., Santarelli A., Traverso P.A. (2021). Pulsed techniques for the characterization of low-frequency dispersive effects in RF power FETs using a flexible measurement set-up. MEASUREMENT, 176, N/A-N/A [10.1016/j.measurement.2021.109240].
Gibiino G.P.; Santarelli A.; Traverso P.A.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/841352
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