This work presents on-wafer characterization measurements of the X-Hall current sensor architecture implemented in 90-nm BCD10 silicon process by STMicroelectronics. With respect to a previous implementation, technological improvements in terms of active region, isolation layers, and metal stack configuration result in a substantially improved sensitivity. In addition, it is reported that the sensitivity can be further improved by applying a negative voltage to the depletion layer.
Gibiino G.P., Crescentini M., Marchesi M., Cogliati M., Romani A., Traverso P.A. (2022). Static Characterization of the X-Hall Current Sensor in BCD10 Technology. Budapest : International Measurement Confederation (IMEKO) [10.21014/tc4-2022.58].
Static Characterization of the X-Hall Current Sensor in BCD10 Technology
Gibiino G. P.
;Crescentini M.;Romani A.;Traverso P. A.
2022
Abstract
This work presents on-wafer characterization measurements of the X-Hall current sensor architecture implemented in 90-nm BCD10 silicon process by STMicroelectronics. With respect to a previous implementation, technological improvements in terms of active region, isolation layers, and metal stack configuration result in a substantially improved sensitivity. In addition, it is reported that the sensitivity can be further improved by applying a negative voltage to the depletion layer.| File | Dimensione | Formato | |
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