This work presents on-wafer characterization measurements of the X-Hall current sensor architecture implemented in 90-nm BCD10 silicon process by STMicroelectronics. With respect to a previous implementation, technological improvements in terms of active region, isolation layers, and metal stack configuration result in a substantially improved sensitivity. In addition, it is reported that the sensitivity can be further improved by applying a negative voltage to the depletion layer.
Static Characterization of the X-Hall Current Sensor in BCD10 Technology
Gibiino G. P.
;Crescentini M.;Romani A.;Traverso P. A.
2022
Abstract
This work presents on-wafer characterization measurements of the X-Hall current sensor architecture implemented in 90-nm BCD10 silicon process by STMicroelectronics. With respect to a previous implementation, technological improvements in terms of active region, isolation layers, and metal stack configuration result in a substantially improved sensitivity. In addition, it is reported that the sensitivity can be further improved by applying a negative voltage to the depletion layer.File in questo prodotto:
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