CRIS Current Research Information System

CAVALLINI, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 9.621
EU - Europa 7.058
AS - Asia 3.216
AF - Africa 413
OC - Oceania 14
SA - Sud America 12
Continente sconosciuto - Info sul continente non disponibili 1
Totale 20.335
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Nazione #
US - Stati Uniti d'America 9.607
GB - Regno Unito 2.674
CN - Cina 1.360
DE - Germania 987
UA - Ucraina 846
SG - Singapore 833
IT - Italia 694
IN - India 455
VN - Vietnam 446
SE - Svezia 435
FR - Francia 421
RU - Federazione Russa 328
IE - Irlanda 264
EE - Estonia 177
ZA - Sudafrica 163
TG - Togo 148
SC - Seychelles 77
BG - Bulgaria 36
JP - Giappone 36
GR - Grecia 35
FI - Finlandia 31
CH - Svizzera 29
BE - Belgio 24
NL - Olanda 24
JO - Giordania 19
CI - Costa d'Avorio 16
PK - Pakistan 13
AU - Australia 11
CA - Canada 11
CZ - Repubblica Ceca 11
HK - Hong Kong 10
HR - Croazia 10
PL - Polonia 10
LB - Libano 9
AT - Austria 8
KR - Corea 7
TN - Tunisia 6
BR - Brasile 5
TW - Taiwan 5
CL - Cile 4
TR - Turchia 4
AM - Armenia 3
ES - Italia 3
NZ - Nuova Zelanda 3
PE - Perù 3
SA - Arabia Saudita 3
AZ - Azerbaigian 2
BD - Bangladesh 2
CU - Cuba 2
DK - Danimarca 2
IL - Israele 2
LU - Lussemburgo 2
MA - Marocco 2
RO - Romania 2
UZ - Uzbekistan 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BA - Bosnia-Erzegovina 1
BY - Bielorussia 1
HU - Ungheria 1
IQ - Iraq 1
KW - Kuwait 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MX - Messico 1
MY - Malesia 1
NG - Nigeria 1
NO - Norvegia 1
PT - Portogallo 1
Totale 20.335
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Città #
Southend 2.457
Fairfield 1.294
Santa Clara 819
Singapore 763
Ashburn 682
Wilmington 606
Woodbridge 597
Houston 582
Jacksonville 580
Seattle 531
Princeton 467
Chandler 440
Cambridge 428
Ann Arbor 365
Dong Ket 289
Boardman 266
Dublin 264
Nanjing 220
Westminster 218
Padova 215
Lomé 148
Berlin 143
Jinan 122
Saint Petersburg 108
Mülheim 106
Medford 105
Shenyang 98
Turin 87
Hebei 81
Mahé 75
San Diego 75
Nanchang 69
Changsha 68
Milan 67
Bologna 63
New York 59
Pune 53
Tianjin 47
Jiaxing 43
Falls Church 40
Des Moines 37
Sofia 36
Verona 36
Zhengzhou 36
Hangzhou 34
Ningbo 33
Lanzhou 31
Dearborn 30
Helsinki 30
Beijing 29
Guangzhou 27
Norwalk 27
Tokyo 26
Los Angeles 25
Shanghai 25
Olalla 22
San Venanzo 22
Bremen 20
Amman 19
Fuzhou 19
Haikou 19
Taizhou 19
Brussels 18
Kunming 18
Abidjan 16
Bern 16
Phoenix 16
Taiyuan 15
Mountain View 14
Bühl 13
London 12
Chicago 11
Frankfurt Am Main 11
Moscow 11
Washington 11
Shenzhen 10
Changchun 9
Dongguan 9
Groningen 8
Redwood City 8
San Francisco 8
Shijiazhuang 8
Chongqing 7
Frankfurt am Main 7
Melbourne 7
Plauen 7
Qingdao 7
Buffalo 6
Chengdu 6
Florence 6
Hong Kong 6
Kiev 6
Lausanne 6
Wuhan 6
Amsterdam 5
Bari 5
Faisalabad 5
Forlì 5
Genzano Di Roma 5
Hefei 5
Totale 14.691
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Nome #
Short term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy 172
Advanced Characterization Techniques 163
Irradiation effects on the compensation of semi-insulating GaAs for particle detector application 161
Anisotropic charge transport in organic single crystals based on dipolar molecules 161
Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy 153
Electronic transitions at defect states in Cz p-type silicon 147
4H-SiC band structure investigated by surface photovoltage spectroscopy 146
Band bowing and Si donor levels in InGaN layers investigated by surface photo voltage spectroscopy 143
Surface Photovoltage Spectroscopy of Semiconductor Nanostructures 142
A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy 138
Anisotropic charge transport in organic single crystals based on dipolar molecules 136
Deep Levels by proton- and electron-irradiation in 4H-SiC 135
Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy 134
Silicon carbide and its use as a radiation detector material 133
Three-dimensional anisotropic density of states distribution and intrinsic-like mobility in organic single crystals 133
X-ray irradiation effects on the trapping properties of Cd1−xZnxTe detectors 133
Advanced model of silicon edgeless detector operation 132
Anisotropic transport properties of organic single crystals 132
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based LEDs 131
Surface and Defect States in Semiconductors Investigated by Surface PhotovoltageDefects in Semiconductors 128
Low temperature annealing of electron irradiation induced defects in 4H-SiC 127
n+/p diodes Realized in SiC by 300°C Phosphorus ion implantation: electrical characterizaztion as a function of temperature 127
Mott barrier behavior by enhanced donorlike level neutralization in semi-insulating GaAs Schottky diodes 126
Degeneracy and instability of nanocontacts between conductive tips and hydrogenated nanocrystalline Si surfaces in conductive atomic force microscopy 125
Laboratori Aperti del Dipartimento di Fisica 124
Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes 124
Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures 124
Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC 123
Electrical properties of dislocations in III-Nitrides 122
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs 122
Recovery of radiation damage in CdTe detectors 121
Surface Photovoltage Spectroscopy Analyses of Cd1-x ZnxTe 121
Solution-Grown, Macroscopic Organic Single Crystals Exhibiting Three-Dimensional Anisotropic Charge-Transport Properties 121
Electrical properties of extended defects in III-nitrides 121
Damage induced by ionizing radiation on CdZnTe and CdTe detectors 120
Nanocrack-induced leakage current in AlInN/AlN/GaN 120
Mono and multi-crystalline Silicon characterization by Non-Contacting Techniques 120
Aging control of organic thin film transistors via ion-implantation 119
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects 119
Charge collecting properties of proton irradiated CdTe detectors 117
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy 116
Nanocrystalline Silicon Films as Multifunctional Material for Optoelectronic and Photovoltaic Applications 116
Recovery of radiation damage in CdTe and CdZnTe detectors 116
Conduction Mechanisms in Al0.84In0.16N/AlN/GaN investigated at the nanoscale 116
Electronic levels introduced by irradiation in silicon carbide. 114
An investigation of the gate role on the electrical chracteristics of OFETs 113
Micro- and nano-structures in silicon studied by DLTS and scanning probe methods 113
Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes 113
Photocurrent spectroscopy of ion-implanted organic thin film transistors 112
On the Interaction of Dislocations with Impurities in Silicon 112
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes 111
Mobility-limiting mechanisms in polar semiconductor heterostructures 111
Electronic Level Scheme in Boron- and Phosphorus-Doped Silicon Nanowires 111
Bundling of GaAs Nanowires: A Case of Adhesion-Induced Self-Assembly of Nanowires 111
Electrical properties of the sensitive side in Si edgeless detectors 111
Preparing the way for doping wurtzite silicon nanowires while retaining the phase 110
Effects of single-layer Shockley stacking faults on the transport properties of high-purity semi-insulating 4H–SiC 109
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms 109
Radiation-induced effects in GaN by photoconductivity analysis 109
Properties of Si nanowires as a function of their growth conditions 109
Comparison between cathodoluminescence spectroscopy and capacitance transient spectroscopy on AlC ion implanted 4H-SiC pC=n diodes 108
Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures 108
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes 108
Indium segregation in AlInN/AlN/GaN heterostructures 108
Radiation damage induced by 2 MeV protons in CdTe and CdZnTe planar detectors 107
Preparation of Ni2Si contacts: effect on SiC diode operation 107
Yellow and green bands in GaN by resolved spectral photoconductivity 107
Defect Distribution along Single GaN Nanowhiskers 106
Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures 106
Two dimensional electron gas formation in undoped In0.75Ga0.25As/In0.75Al0.25As quantum well 105
Time and thermal recovery of irradiated CdZnTe detectors 105
Franz-Keldysh effect in GaN nanowires 105
Investigation on Localized States in GaN Nanowires 105
Characterization of polycrystalline 3CB-SiC thin films for MEMS and pressure sensors application 104
Radiation Detection Properties of 4H-SiC Schottky Diodes Irradiated Up to$10^16$n/cm$^2$by 1 MeV Neutrons 104
Correlating photocurrent spectra and electrical transport parameters in organic field effect transistors 104
Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds 104
Photocurrent studies of sexythiophene-based OFETs 104
Optoelectronic properties of GaN epilayers in the region of yellow luminescence 103
Progetto lauree Scientifiche-Fisica 103
Two dimensional electron gas (2DEG) density in nearly lattice matched InxAl1-xN/AlN/GaN (x=14%) HEMTs 103
Investigation of the properties of In-related alloys by AFM 103
Surface photovoltage spectroscopy characterization of Al1-xInxN/AlN/GaN heterostructures 103
Electrical activity of deep traps in high resistivity CdTe: Spectroscopic characterization 103
Surface Photovoltage Spectroscopy. Method and Applications. 102
Thickness-related features observed in GaN epitaxial layers 102
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs 102
Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing 102
Progetto Lauree Scientifiche 100
Al1-xInxN/AlN/GaN Heterostructures Investigated by Surface Photovoltage Spectroscopy 100
Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC 100
Extended Defects in Semiconductors 99
Ge clustering effects in Ge doped CdTe: Electrical and structural properties 99
Electronic states related to dislocations in silicon 99
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices 99
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 99
Deep traps induced by 700keV protons in CdTe and CdZnTe detectors 98
Recent advancements in the development of radiation hard semiconductor detectors for S-LHC 98
Defect characterization in GaN: Possible influence of dislocations in the yellow-band features 98
Deep levels in MBE grown AlGaAs/GaAs heterostructures 98
Totale 11.656
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Categoria #
all - tutte 52.069
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 52.069
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20203.697 0 0 0 0 0 586 706 791 664 357 210 383
2020/20212.969 668 218 82 282 17 167 90 324 196 161 144 620
2021/20223.087 367 80 238 185 342 276 97 225 119 107 439 612
2022/20233.089 389 513 194 401 152 162 85 184 458 89 314 148
2023/2024803 58 127 64 64 84 215 40 39 19 49 13 31
2024/20252.644 99 791 257 240 1.109 148 0 0 0 0 0 0
Totale 20.599