CRIS Current Research Information System

CAVALLINI, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 8.248
EU - Europa 6.978
AS - Asia 2.042
AF - Africa 411
OC - Oceania 14
SA - Sud America 12
Continente sconosciuto - Info sul continente non disponibili 1
Totale 17.706
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Nazione #
US - Stati Uniti d'America 8.235
GB - Regno Unito 2.672
CN - Cina 1.012
DE - Germania 981
UA - Ucraina 845
IT - Italia 680
IN - India 454
VN - Vietnam 446
SE - Svezia 435
FR - Francia 418
RU - Federazione Russa 282
IE - Irlanda 264
EE - Estonia 177
ZA - Sudafrica 163
TG - Togo 148
SC - Seychelles 77
BG - Bulgaria 36
GR - Grecia 35
JP - Giappone 35
CH - Svizzera 29
FI - Finlandia 26
BE - Belgio 24
NL - Olanda 23
SG - Singapore 23
JO - Giordania 19
CI - Costa d'Avorio 16
PK - Pakistan 12
AU - Australia 11
CA - Canada 11
CZ - Repubblica Ceca 10
HR - Croazia 10
PL - Polonia 10
LB - Libano 9
AT - Austria 7
KR - Corea 7
TN - Tunisia 6
BR - Brasile 5
CL - Cile 4
HK - Hong Kong 4
TR - Turchia 4
AM - Armenia 3
ES - Italia 3
NZ - Nuova Zelanda 3
PE - Perù 3
SA - Arabia Saudita 3
BD - Bangladesh 2
CU - Cuba 2
DK - Danimarca 2
LU - Lussemburgo 2
RO - Romania 2
TW - Taiwan 2
UZ - Uzbekistan 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BA - Bosnia-Erzegovina 1
BY - Bielorussia 1
HU - Ungheria 1
IQ - Iraq 1
KW - Kuwait 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MY - Malesia 1
NG - Nigeria 1
NO - Norvegia 1
PT - Portogallo 1
Totale 17.706
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Città #
Southend 2.457
Fairfield 1.294
Ashburn 670
Wilmington 606
Woodbridge 597
Houston 582
Jacksonville 580
Seattle 529
Princeton 467
Chandler 440
Cambridge 428
Ann Arbor 365
Dong Ket 289
Dublin 264
Westminster 218
Nanjing 216
Padova 215
Lomé 148
Berlin 143
Jinan 115
Saint Petersburg 108
Mülheim 106
Medford 105
Shenyang 97
Turin 85
Hebei 81
Mahé 75
San Diego 75
Nanchang 69
Milan 66
Changsha 64
Bologna 61
New York 59
Pune 53
Jiaxing 43
Tianjin 42
Falls Church 40
Des Moines 37
Sofia 36
Verona 36
Lanzhou 31
Dearborn 30
Hangzhou 30
Ningbo 29
Boardman 27
Norwalk 27
Helsinki 25
Tokyo 25
Zhengzhou 23
Olalla 22
San Venanzo 22
Bremen 20
Los Angeles 20
Amman 19
Beijing 19
Haikou 19
Brussels 18
Fuzhou 17
Taizhou 17
Abidjan 16
Bern 16
Kunming 15
Mountain View 14
Bühl 13
Taiyuan 13
London 12
Singapore 12
Chicago 11
Frankfurt Am Main 11
Guangzhou 11
Washington 10
Groningen 8
Redwood City 8
San Francisco 8
Changchun 7
Melbourne 7
Plauen 7
Buffalo 6
Florence 6
Frankfurt am Main 6
Kiev 6
Lausanne 6
Shanghai 6
Amsterdam 5
Bari 5
Faisalabad 5
Forlì 5
Genzano Di Roma 5
Toronto 5
Hefei 4
Lahore 4
Orange 4
Redmond 4
San Jose 4
Warsaw 4
Allen 3
Athens 3
Central 3
Culemborg 3
Den Haag 3
Totale 12.705
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Nome #
Short term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy 156
Irradiation effects on the compensation of semi-insulating GaAs for particle detector application 152
Anisotropic charge transport in organic single crystals based on dipolar molecules 151
Advanced Characterization Techniques 146
Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy 145
Electronic transitions at defect states in Cz p-type silicon 137
Band bowing and Si donor levels in InGaN layers investigated by surface photo voltage spectroscopy 135
4H-SiC band structure investigated by surface photovoltage spectroscopy 132
Surface Photovoltage Spectroscopy of Semiconductor Nanostructures 128
Anisotropic charge transport in organic single crystals based on dipolar molecules 124
Anisotropic transport properties of organic single crystals 122
Deep Levels by proton- and electron-irradiation in 4H-SiC 121
Three-dimensional anisotropic density of states distribution and intrinsic-like mobility in organic single crystals 121
Surface and Defect States in Semiconductors Investigated by Surface PhotovoltageDefects in Semiconductors 120
Low temperature annealing of electron irradiation induced defects in 4H-SiC 118
Silicon carbide and its use as a radiation detector material 117
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based LEDs 117
Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy 117
Advanced model of silicon edgeless detector operation 116
A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy 116
Laboratori Aperti del Dipartimento di Fisica 113
Damage induced by ionizing radiation on CdZnTe and CdTe detectors 112
X-ray irradiation effects on the trapping properties of Cd1−xZnxTe detectors 112
Mott barrier behavior by enhanced donorlike level neutralization in semi-insulating GaAs Schottky diodes 111
Aging control of organic thin film transistors via ion-implantation 111
Nanocrack-induced leakage current in AlInN/AlN/GaN 111
n+/p diodes Realized in SiC by 300°C Phosphorus ion implantation: electrical characterizaztion as a function of temperature 111
Recovery of radiation damage in CdTe detectors 109
Solution-Grown, Macroscopic Organic Single Crystals Exhibiting Three-Dimensional Anisotropic Charge-Transport Properties 108
Mono and multi-crystalline Silicon characterization by Non-Contacting Techniques 108
Electrical properties of dislocations in III-Nitrides 106
Degeneracy and instability of nanocontacts between conductive tips and hydrogenated nanocrystalline Si surfaces in conductive atomic force microscopy 106
Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC 105
Conduction Mechanisms in Al0.84In0.16N/AlN/GaN investigated at the nanoscale 105
Electrical properties of extended defects in III-nitrides 105
Nanocrystalline Silicon Films as Multifunctional Material for Optoelectronic and Photovoltaic Applications 104
Surface Photovoltage Spectroscopy Analyses of Cd1-x ZnxTe 104
Recovery of radiation damage in CdTe and CdZnTe detectors 103
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs 103
Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures 103
Micro- and nano-structures in silicon studied by DLTS and scanning probe methods 102
Photocurrent spectroscopy of ion-implanted organic thin film transistors 101
Mobility-limiting mechanisms in polar semiconductor heterostructures 101
Radiation-induced effects in GaN by photoconductivity analysis 101
Preparing the way for doping wurtzite silicon nanowires while retaining the phase 101
Charge collecting properties of proton irradiated CdTe detectors 100
Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes 100
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects 100
Time and thermal recovery of irradiated CdZnTe detectors 99
Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes 99
On the Interaction of Dislocations with Impurities in Silicon 99
Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures 98
Electronic Level Scheme in Boron- and Phosphorus-Doped Silicon Nanowires 98
Bundling of GaAs Nanowires: A Case of Adhesion-Induced Self-Assembly of Nanowires 98
Electrical properties of the sensitive side in Si edgeless detectors 98
Electronic levels introduced by irradiation in silicon carbide. 97
An investigation of the gate role on the electrical chracteristics of OFETs 97
Yellow and green bands in GaN by resolved spectral photoconductivity 97
Radiation damage induced by 2 MeV protons in CdTe and CdZnTe planar detectors 96
Two dimensional electron gas formation in undoped In0.75Ga0.25As/In0.75Al0.25As quantum well 96
Effects of single-layer Shockley stacking faults on the transport properties of high-purity semi-insulating 4H–SiC 96
Surface photovoltage spectroscopy characterization of Al1-xInxN/AlN/GaN heterostructures 96
Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures 95
Correlating photocurrent spectra and electrical transport parameters in organic field effect transistors 95
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes 94
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy 94
Franz-Keldysh effect in GaN nanowires 94
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes 93
Characterization of polycrystalline 3CB-SiC thin films for MEMS and pressure sensors application 92
Defect Distribution along Single GaN Nanowhiskers 92
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms 92
Thickness-related features observed in GaN epitaxial layers 92
Properties of Si nanowires as a function of their growth conditions 92
Optoelectronic properties of GaN epilayers in the region of yellow luminescence 91
Radiation Detection Properties of 4H-SiC Schottky Diodes Irradiated Up to$10^16$n/cm$^2$by 1 MeV Neutrons 91
Progetto lauree Scientifiche-Fisica 90
Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC 90
Investigation on Localized States in GaN Nanowires 90
Indium segregation in AlInN/AlN/GaN heterostructures 90
Photocurrent studies of sexythiophene-based OFETs 90
Ge clustering effects in Ge doped CdTe: Electrical and structural properties 89
Investigation of the properties of In-related alloys by AFM 89
Electrical activity of deep traps in high resistivity CdTe: Spectroscopic characterization 89
Comparison between cathodoluminescence spectroscopy and capacitance transient spectroscopy on AlC ion implanted 4H-SiC pC=n diodes 88
Surface Photovoltage Spectroscopy. Method and Applications. 88
Recent advancements in the development of radiation hard semiconductor detectors for S-LHC 87
Two dimensional electron gas (2DEG) density in nearly lattice matched InxAl1-xN/AlN/GaN (x=14%) HEMTs 87
15th International Conference on room temperature semiconductor x- and gamma-ray detectors 87
Electronic states related to dislocations in silicon 87
Defect states in Czochalski p-type silicon: the role of oxygen and dislocations 87
Deep levels in MBE grown AlGaAs/GaAs heterostructures 87
Deep traps induced by 700keV protons in CdTe and CdZnTe detectors 86
Progetto Lauree Scientifiche 86
Preparation of Ni2Si contacts: effect on SiC diode operation 86
Defect investigation in Al0.87In0.13N/AlN/GaN heterostructures by scanning force microscopy methods 86
Strain distribution and defect analysis in III-nitrides by dynamical AFM analysis 86
Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds 86
Current-voltage measurement of AlxIn1-xN/AlN/GaN heterostructures 86
Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing 86
Minority Carrier Diffusion Lengths in Multi-crystalline Silicon Wafers and Solar Cells 86
Totale 10.307
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Categoria #
all - tutte 44.340
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 44.340
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20205.790 978 137 126 350 502 586 706 791 664 357 210 383
2020/20212.969 668 218 82 282 17 167 90 324 196 161 144 620
2021/20223.087 367 80 238 185 342 276 97 225 119 107 439 612
2022/20233.089 389 513 194 401 152 162 85 184 458 89 314 148
2023/2024803 58 127 64 64 84 215 40 39 19 49 13 31
2024/202515 15 0 0 0 0 0 0 0 0 0 0 0
Totale 17.970