CRIS Current Research Information System

CAVALLINI, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 11.489
AS - Asia 9.361
EU - Europa 7.825
SA - Sud America 633
AF - Africa 533
OC - Oceania 16
Continente sconosciuto - Info sul continente non disponibili 3
Totale 29.860
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Nazione #
US - Stati Uniti d'America 11.386
SG - Singapore 2.715
GB - Regno Unito 2.713
CN - Cina 2.549
VN - Vietnam 2.201
DE - Germania 1.073
UA - Ucraina 853
IT - Italia 766
FR - Francia 677
HK - Hong Kong 640
IN - India 551
RU - Federazione Russa 503
BR - Brasile 472
SE - Svezia 438
IE - Irlanda 267
JP - Giappone 251
ZA - Sudafrica 179
EE - Estonia 177
TG - Togo 148
KR - Corea 99
SC - Seychelles 81
AR - Argentina 72
FI - Finlandia 68
CI - Costa d'Avorio 59
MX - Messico 45
BD - Bangladesh 40
NL - Olanda 40
GR - Grecia 39
CA - Canada 37
BG - Bulgaria 36
TH - Thailandia 35
IQ - Iraq 34
BE - Belgio 31
CH - Svizzera 31
PH - Filippine 31
PK - Pakistan 28
TW - Taiwan 25
EC - Ecuador 23
JO - Giordania 22
AT - Austria 21
PL - Polonia 21
ID - Indonesia 20
TR - Turchia 19
ES - Italia 17
CL - Cile 16
CZ - Repubblica Ceca 15
MY - Malesia 15
SA - Arabia Saudita 15
CO - Colombia 14
PY - Paraguay 14
AU - Australia 13
LB - Libano 12
MA - Marocco 12
TN - Tunisia 12
HR - Croazia 11
IL - Israele 10
UZ - Uzbekistan 10
EG - Egitto 9
KE - Kenya 8
PE - Perù 8
ET - Etiopia 7
JM - Giamaica 7
NP - Nepal 7
VE - Venezuela 7
AZ - Azerbaigian 5
AE - Emirati Arabi Uniti 4
BY - Bielorussia 4
AM - Armenia 3
BO - Bolivia 3
DK - Danimarca 3
DZ - Algeria 3
LT - Lituania 3
NG - Nigeria 3
NZ - Nuova Zelanda 3
PA - Panama 3
SN - Senegal 3
SY - Repubblica araba siriana 3
BA - Bosnia-Erzegovina 2
CR - Costa Rica 2
CU - Cuba 2
DO - Repubblica Dominicana 2
GA - Gabon 2
GI - Gibilterra 2
HN - Honduras 2
KW - Kuwait 2
KZ - Kazakistan 2
LU - Lussemburgo 2
ME - Montenegro 2
PS - Palestinian Territory 2
RO - Romania 2
TJ - Tagikistan 2
UY - Uruguay 2
XK - ???statistics.table.value.countryCode.XK??? 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AL - Albania 1
AO - Angola 1
BF - Burkina Faso 1
BH - Bahrain 1
BW - Botswana 1
GE - Georgia 1
Totale 29.837
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Città #
Southend 2.457
Singapore 1.808
Fairfield 1.294
Ashburn 859
Santa Clara 836
San Jose 749
Hong Kong 615
Wilmington 606
Woodbridge 597
Houston 584
Jacksonville 581
Seattle 534
Ho Chi Minh City 515
Princeton 466
Chandler 440
Hanoi 437
Cambridge 428
Ann Arbor 365
Dong Ket 289
Hefei 274
Beijing 271
Boardman 270
Dublin 267
Nanjing 224
Tokyo 223
Lauterbourg 220
Westminster 218
Padova 215
Lomé 148
Berlin 141
Los Angeles 141
Jinan 126
Saint Petersburg 108
Buffalo 106
Mülheim 106
Medford 105
Shenyang 101
Dallas 97
Turin 87
Bologna 84
New York 82
Hebei 81
Milan 77
Mahé 75
San Diego 75
Changsha 73
Seoul 73
The Dalles 72
Nanchang 70
Haiphong 64
Tianjin 60
Abidjan 59
Helsinki 59
Da Nang 56
Pune 55
Tongling 55
Guangzhou 53
Redondo Beach 45
Shanghai 45
Hangzhou 44
Jiaxing 43
Des Moines 41
Falls Church 40
Zhengzhou 40
São Paulo 38
Frankfurt am Main 36
Sofia 36
Verona 36
Yubileyny 34
Munich 33
Ningbo 33
Chicago 32
Lanzhou 31
Dearborn 30
Hải Dương 30
Shenzhen 30
Norwalk 27
Bengaluru 23
Fuzhou 23
Amman 22
Brussels 22
Olalla 22
San Venanzo 22
Phoenix 21
Bangkok 20
Bremen 20
London 20
Can Tho 19
Haikou 19
Taizhou 19
Kunming 18
Moscow 18
Orem 18
Quận Bình Thạnh 18
Ninh Bình 17
Bern 16
San Francisco 16
Taiyuan 16
Biên Hòa 15
Brooklyn 15
Totale 20.294
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Nome #
Two dimensional electron gas (2DEG) density in nearly lattice matched InxAl1-xN/AlN/GaN (x=14%) HEMTs 254
n+/p diodes Realized in SiC by 300°C Phosphorus ion implantation: electrical characterizaztion as a function of temperature 237
Short term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy 229
OPTICAL AND ELECTRICAL PROPERTIES OF HYDROGENATED MICROCRYSTALLINE SILICON FILMS 219
Surface Photovoltage Spectroscopy of Semiconductor Nanostructures 215
Irradiation effects on the compensation of semi-insulating GaAs for particle detector application 213
Preparation of Ni2Si contacts: effect on SiC diode operation 211
Electronic transitions at defect states in Cz p-type silicon 207
Laboratori Aperti del Dipartimento di Fisica 205
Anisotropic charge transport in organic single crystals based on dipolar molecules 205
Advanced Characterization Techniques 203
Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy 198
Deep Levels by proton- and electron-irradiation in 4H-SiC 195
A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy 192
Low temperature annealing of electron irradiation induced defects in 4H-SiC 191
4H-SiC band structure investigated by surface photovoltage spectroscopy 183
Mott barrier behavior by enhanced donorlike level neutralization in semi-insulating GaAs Schottky diodes 182
Anisotropic transport properties of organic single crystals 179
Recovery of radiation damage in CdTe detectors 178
Band bowing and Si donor levels in InGaN layers investigated by surface photo voltage spectroscopy 178
Anisotropic charge transport in organic single crystals based on dipolar molecules 176
Damage induced by ionizing radiation on CdZnTe and CdTe detectors 175
Solution-Grown, Macroscopic Organic Single Crystals Exhibiting Three-Dimensional Anisotropic Charge-Transport Properties 175
Advanced model of silicon edgeless detector operation 173
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects 173
Surface and Defect States in Semiconductors Investigated by Surface PhotovoltageDefects in Semiconductors 172
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms 171
X-ray irradiation effects on the trapping properties of Cd1−xZnxTe detectors 170
Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC 168
Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy 168
Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures 167
Radiation damage induced by 2 MeV protons in CdTe and CdZnTe planar detectors 166
Recovery of radiation damage in CdTe and CdZnTe detectors 165
Three-dimensional anisotropic density of states distribution and intrinsic-like mobility in organic single crystals 165
Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes 164
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes 163
Electronic levels introduced by irradiation in silicon carbide. 163
Time and thermal recovery of irradiated CdZnTe detectors 163
Progetto Lauree Scientifiche 163
Nanocrack-induced leakage current in AlInN/AlN/GaN 163
Progetto lauree Scientifiche-Fisica 162
Electrical properties of extended defects in III-nitrides 162
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based LEDs 161
Electrical properties of dislocations in III-Nitrides 160
Silicon carbide and its use as a radiation detector material 158
Bundling of GaAs Nanowires: A Case of Adhesion-Induced Self-Assembly of Nanowires 158
Degeneracy and instability of nanocontacts between conductive tips and hydrogenated nanocrystalline Si surfaces in conductive atomic force microscopy 158
Characterization of polycrystalline 3CB-SiC thin films for MEMS and pressure sensors application 157
An investigation of the gate role on the electrical chracteristics of OFETs 157
Electronic Level Scheme in Boron- and Phosphorus-Doped Silicon Nanowires 157
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs 157
Two dimensional electron gas formation in undoped In0.75Ga0.25As/In0.75Al0.25As quantum well 156
Defect Distribution along Single GaN Nanowhiskers 155
Study of the structural, optical and electrical properties of extended defects in GaN 154
Properties of Si nanowires as a function of their growth conditions 154
Mono and multi-crystalline Silicon characterization by Non-Contacting Techniques 154
Micro- and nano-structures in silicon studied by DLTS and scanning probe methods 153
Conduction Mechanisms in Al0.84In0.16N/AlN/GaN investigated at the nanoscale 153
Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes 151
Surface Photovoltage Spectroscopy Analyses of Cd1-x ZnxTe 150
Dislocations, extended defects and interfaces at nanoparticles as effective sources of room temperature photo- and electro-luminescence in silicon and silicon-germanium 150
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy 149
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices 149
Electrical properties of the sensitive side in Si edgeless detectors 149
On the Interaction of Dislocations with Impurities in Silicon 148
Thickness-related features observed in GaN epitaxial layers 147
Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices 147
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes 147
Extended Defects in Semiconductors 146
Preparing the way for doping wurtzite silicon nanowires while retaining the phase 146
Recovery effect of electron irradiated 4H-SiC Schottky diodes 145
Nanocrystalline Silicon Films as Multifunctional Material for Optoelectronic and Photovoltaic Applications 145
Franz-Keldysh effect in GaN nanowires 145
Photocurrent spectroscopy of ion-implanted organic thin film transistors 144
Radiation-induced effects in GaN by photoconductivity analysis 144
Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures 143
Charge collecting properties of proton irradiated CdTe detectors 142
Effects of single-layer Shockley stacking faults on the transport properties of high-purity semi-insulating 4H–SiC 142
Impact of AlN Spacer on Metal–Semiconductor–Metal Pt–InAlGaN/GaN Heterostructures for Ultraviolet Detection 142
Yellow and green bands in GaN by resolved spectral photoconductivity 142
Defect States in nc-Si:H investigated by surface photovoltage spectroscopy 142
Indium segregation in AlInN/AlN/GaN heterostructures 142
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 142
Aging control of organic thin film transistors via ion-implantation 141
Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing 141
Investigation of deep level defects in CdTe thin films 140
Mobility-limiting mechanisms in polar semiconductor heterostructures 139
Conduction mechanisms in silicon nano-dots/SiC:Si systems investigated by macroscopical and microscopical analyses 139
Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds 139
Investigation on Localized States in GaN Nanowires 139
Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures 138
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs 138
Minority Carrier Diffusion Lengths in Multi-crystalline Silicon Wafers and Solar Cells 138
Electrical activity of deep traps in high resistivity CdTe: Spectroscopic characterization 138
Strain distribution and defect analysis in III-nitrides by dynamical AFM analysis 136
X-Ray Irradiation Effects on the Trapping Properties of Cd(1-x)ZnxTe Detectors 135
Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures 135
Proceedings of the 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia, 2008 135
Radiation Detection Properties of 4H-SiC Schottky Diodes Irradiated Up to$10^16$n/cm$^2$by 1 MeV Neutrons 134
Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors 134
Totale 16.241
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Categoria #
all - tutte 80.948
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 80.948
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021925 0 0 0 0 0 0 0 0 0 161 144 620
2021/20223.087 367 80 238 185 342 276 97 225 119 107 439 612
2022/20233.082 387 512 193 400 152 162 85 184 457 89 313 148
2023/2024802 57 127 64 64 84 215 40 39 19 49 13 31
2024/20254.106 99 789 257 239 1.106 156 265 68 40 62 97 928
2025/20268.127 679 753 1.051 612 1.005 583 828 569 1.651 396 0 0
Totale 30.180