CRIS Current Research Information System

CAVALLINI, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 10.472
EU - Europa 7.489
AS - Asia 7.339
SA - Sud America 572
AF - Africa 498
OC - Oceania 15
Continente sconosciuto - Info sul continente non disponibili 2
Totale 26.387
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Nazione #
US - Stati Uniti d'America 10.389
GB - Regno Unito 2.704
SG - Singapore 2.401
CN - Cina 2.190
VN - Vietnam 1.246
DE - Germania 1.051
UA - Ucraina 851
IT - Italia 748
HK - Hong Kong 592
IN - India 503
RU - Federazione Russa 495
FR - Francia 447
SE - Svezia 438
BR - Brasile 435
IE - Irlanda 266
EE - Estonia 177
ZA - Sudafrica 175
JP - Giappone 173
TG - Togo 148
KR - Corea 83
SC - Seychelles 81
AR - Argentina 65
CI - Costa d'Avorio 59
FI - Finlandia 42
GR - Grecia 38
NL - Olanda 38
MX - Messico 37
BG - Bulgaria 36
CA - Canada 33
CH - Svizzera 29
BE - Belgio 27
EC - Ecuador 21
AT - Austria 20
JO - Giordania 20
PL - Polonia 20
BD - Bangladesh 16
ID - Indonesia 16
PK - Pakistan 16
CZ - Repubblica Ceca 14
CL - Cile 13
AU - Australia 12
ES - Italia 12
PY - Paraguay 12
HR - Croazia 11
CO - Colombia 10
LB - Libano 10
TN - Tunisia 9
MA - Marocco 8
IL - Israele 7
IQ - Iraq 7
TR - Turchia 7
KE - Kenya 6
MY - Malesia 6
PE - Perù 6
SA - Arabia Saudita 5
TH - Thailandia 5
TW - Taiwan 5
UZ - Uzbekistan 5
VE - Venezuela 5
AZ - Azerbaigian 4
BY - Bielorussia 4
AM - Armenia 3
DK - Danimarca 3
EG - Egitto 3
JM - Giamaica 3
LT - Lituania 3
NP - Nepal 3
NZ - Nuova Zelanda 3
AE - Emirati Arabi Uniti 2
BA - Bosnia-Erzegovina 2
BO - Bolivia 2
CU - Cuba 2
DO - Repubblica Dominicana 2
DZ - Algeria 2
GI - Gibilterra 2
LU - Lussemburgo 2
NG - Nigeria 2
PA - Panama 2
RO - Romania 2
SY - Repubblica araba siriana 2
TJ - Tagikistan 2
UY - Uruguay 2
A2 - ???statistics.table.value.countryCode.A2??? 1
CR - Costa Rica 1
ET - Etiopia 1
GA - Gabon 1
GE - Georgia 1
GF - Guiana Francese 1
GH - Ghana 1
GT - Guatemala 1
HN - Honduras 1
HU - Ungheria 1
IR - Iran 1
KH - Cambogia 1
KW - Kuwait 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
LV - Lettonia 1
LY - Libia 1
Totale 26.376
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Città #
Southend 2.457
Singapore 1.516
Fairfield 1.294
Santa Clara 828
Ashburn 807
Wilmington 606
Woodbridge 597
Hong Kong 586
Houston 584
Jacksonville 581
Seattle 534
Princeton 466
Chandler 440
Cambridge 428
Ann Arbor 365
Dong Ket 289
Boardman 270
Dublin 266
Hefei 266
Beijing 262
Ho Chi Minh City 259
Nanjing 221
Westminster 218
Padova 215
Hanoi 203
Tokyo 163
Lomé 148
Berlin 141
Los Angeles 140
Jinan 124
Saint Petersburg 108
Buffalo 106
Mülheim 106
Medford 105
Shenyang 101
Dallas 96
Turin 87
Hebei 81
Bologna 77
Milan 77
Mahé 75
San Diego 75
New York 74
Seoul 73
Nanchang 69
Changsha 68
Abidjan 59
Tongling 55
Pune 53
The Dalles 49
Tianjin 49
Redondo Beach 45
Jiaxing 43
Falls Church 40
Zhengzhou 39
Des Moines 37
Hangzhou 37
Sofia 36
Verona 36
São Paulo 34
Yubileyny 34
Helsinki 33
Munich 33
Ningbo 33
Chicago 31
Guangzhou 31
Lanzhou 31
Dearborn 30
Haiphong 30
Shanghai 29
Norwalk 27
Da Nang 22
Olalla 22
San Venanzo 22
Frankfurt am Main 21
Phoenix 21
Amman 20
Bengaluru 20
Bremen 20
London 20
Fuzhou 19
Haikou 19
Taizhou 19
Brussels 18
Hải Dương 18
Kunming 18
Bern 16
Moscow 16
Brooklyn 15
Quận Bình Thạnh 15
Taiyuan 15
Mountain View 14
San Francisco 14
Biên Hòa 13
Bühl 13
Can Tho 13
Ninh Bình 13
Orem 13
Ha Long 12
Nuremberg 12
Totale 18.099
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Nome #
Two dimensional electron gas (2DEG) density in nearly lattice matched InxAl1-xN/AlN/GaN (x=14%) HEMTs 235
Short term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy 214
n+/p diodes Realized in SiC by 300°C Phosphorus ion implantation: electrical characterizaztion as a function of temperature 213
OPTICAL AND ELECTRICAL PROPERTIES OF HYDROGENATED MICROCRYSTALLINE SILICON FILMS 211
Irradiation effects on the compensation of semi-insulating GaAs for particle detector application 203
Preparation of Ni2Si contacts: effect on SiC diode operation 196
Advanced Characterization Techniques 190
Electronic transitions at defect states in Cz p-type silicon 188
Laboratori Aperti del Dipartimento di Fisica 188
Anisotropic charge transport in organic single crystals based on dipolar molecules 188
Surface Photovoltage Spectroscopy of Semiconductor Nanostructures 182
Deep Levels by proton- and electron-irradiation in 4H-SiC 179
Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy 178
Mott barrier behavior by enhanced donorlike level neutralization in semi-insulating GaAs Schottky diodes 167
Low temperature annealing of electron irradiation induced defects in 4H-SiC 166
A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy 165
Damage induced by ionizing radiation on CdZnTe and CdTe detectors 164
Recovery of radiation damage in CdTe detectors 164
4H-SiC band structure investigated by surface photovoltage spectroscopy 164
Band bowing and Si donor levels in InGaN layers investigated by surface photo voltage spectroscopy 161
Advanced model of silicon edgeless detector operation 160
Anisotropic charge transport in organic single crystals based on dipolar molecules 159
Surface and Defect States in Semiconductors Investigated by Surface PhotovoltageDefects in Semiconductors 158
Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy 157
Anisotropic transport properties of organic single crystals 156
X-ray irradiation effects on the trapping properties of Cd1−xZnxTe detectors 155
Radiation damage induced by 2 MeV protons in CdTe and CdZnTe planar detectors 152
Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC 152
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based LEDs 151
Three-dimensional anisotropic density of states distribution and intrinsic-like mobility in organic single crystals 151
Solution-Grown, Macroscopic Organic Single Crystals Exhibiting Three-Dimensional Anisotropic Charge-Transport Properties 151
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes 150
Electronic levels introduced by irradiation in silicon carbide. 149
Silicon carbide and its use as a radiation detector material 149
Electrical properties of dislocations in III-Nitrides 149
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects 149
Recovery of radiation damage in CdTe and CdZnTe detectors 148
Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes 148
Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures 147
Time and thermal recovery of irradiated CdZnTe detectors 145
Progetto lauree Scientifiche-Fisica 145
Two dimensional electron gas formation in undoped In0.75Ga0.25As/In0.75Al0.25As quantum well 144
Study of the structural, optical and electrical properties of extended defects in GaN 144
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs 144
Electrical properties of extended defects in III-nitrides 144
Characterization of polycrystalline 3CB-SiC thin films for MEMS and pressure sensors application 143
Mono and multi-crystalline Silicon characterization by Non-Contacting Techniques 142
Nanocrack-induced leakage current in AlInN/AlN/GaN 141
Defect Distribution along Single GaN Nanowhiskers 140
Progetto Lauree Scientifiche 140
Electronic Level Scheme in Boron- and Phosphorus-Doped Silicon Nanowires 140
Preparing the way for doping wurtzite silicon nanowires while retaining the phase 140
Micro- and nano-structures in silicon studied by DLTS and scanning probe methods 139
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy 139
Conduction Mechanisms in Al0.84In0.16N/AlN/GaN investigated at the nanoscale 138
Bundling of GaAs Nanowires: A Case of Adhesion-Induced Self-Assembly of Nanowires 138
Properties of Si nanowires as a function of their growth conditions 138
An investigation of the gate role on the electrical chracteristics of OFETs 137
Nanocrystalline Silicon Films as Multifunctional Material for Optoelectronic and Photovoltaic Applications 137
Surface Photovoltage Spectroscopy Analyses of Cd1-x ZnxTe 137
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms 137
Degeneracy and instability of nanocontacts between conductive tips and hydrogenated nanocrystalline Si surfaces in conductive atomic force microscopy 137
Recovery effect of electron irradiated 4H-SiC Schottky diodes 136
Impact of AlN Spacer on Metal–Semiconductor–Metal Pt–InAlGaN/GaN Heterostructures for Ultraviolet Detection 136
Charge collecting properties of proton irradiated CdTe detectors 135
Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes 135
Thickness-related features observed in GaN epitaxial layers 135
Electrical properties of the sensitive side in Si edgeless detectors 135
Aging control of organic thin film transistors via ion-implantation 133
Radiation-induced effects in GaN by photoconductivity analysis 132
Extended Defects in Semiconductors 131
On the Interaction of Dislocations with Impurities in Silicon 131
Dislocations, extended defects and interfaces at nanoparticles as effective sources of room temperature photo- and electro-luminescence in silicon and silicon-germanium 131
Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds 130
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes 130
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 129
Photocurrent spectroscopy of ion-implanted organic thin film transistors 128
Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing 128
Yellow and green bands in GaN by resolved spectral photoconductivity 128
Radiation Detection Properties of 4H-SiC Schottky Diodes Irradiated Up to$10^16$n/cm$^2$by 1 MeV Neutrons 127
Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures 127
Mobility-limiting mechanisms in polar semiconductor heterostructures 127
Franz-Keldysh effect in GaN nanowires 127
Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices 126
Indium segregation in AlInN/AlN/GaN heterostructures 126
Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures 125
Electrical activity of deep traps in high resistivity CdTe: Spectroscopic characterization 125
Optoelectronic properties of GaN epilayers in the region of yellow luminescence 124
Comparison between cathodoluminescence spectroscopy and capacitance transient spectroscopy on AlC ion implanted 4H-SiC pC=n diodes 124
Effects of single-layer Shockley stacking faults on the transport properties of high-purity semi-insulating 4H–SiC 124
Correlating photocurrent spectra and electrical transport parameters in organic field effect transistors 124
Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC 124
Investigation on Localized States in GaN Nanowires 124
X-Ray Irradiation Effects on the Trapping Properties of Cd(1-x)ZnxTe Detectors 123
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs 123
Photocurrent studies of sexythiophene-based OFETs 123
Defect characterization in GaN: Possible influence of dislocations in the yellow-band features 123
Investigation of deep level defects in CdTe thin films 123
Preface and Acknowledgments 122
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices 121
Totale 14.691
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Categoria #
all - tutte 75.018
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 75.018
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.702 0 0 0 0 0 167 90 324 196 161 144 620
2021/20223.087 367 80 238 185 342 276 97 225 119 107 439 612
2022/20233.082 387 512 193 400 152 162 85 184 457 89 313 148
2023/2024802 57 127 64 64 84 215 40 39 19 49 13 31
2024/20254.106 99 789 257 239 1.106 156 265 68 40 62 97 928
2025/20264.629 679 753 1.051 612 1.005 529 0 0 0 0 0 0
Totale 26.682