CRIS Current Research Information System

CAVALLINI, ANNA
 Distribuzione geografica
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Continente #
NA - Nord America 12.525
AS - Asia 9.528
EU - Europa 8.010
SA - Sud America 643
AF - Africa 537
Continente sconosciuto - Info sul continente non disponibili 324
OC - Oceania 17
Totale 31.584
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Nazione #
US - Stati Uniti d'America 12.362
SG - Singapore 2.752
GB - Regno Unito 2.716
CN - Cina 2.576
VN - Vietnam 2.235
DE - Germania 1.075
IT - Italia 917
UA - Ucraina 854
FR - Francia 677
HK - Hong Kong 659
IN - India 552
RU - Federazione Russa 503
BR - Brasile 477
SE - Svezia 450
IE - Irlanda 267
JP - Giappone 252
ZA - Sudafrica 179
EE - Estonia 177
TG - Togo 148
KR - Corea 99
BD - Bangladesh 86
SC - Seychelles 85
AR - Argentina 73
FI - Finlandia 68
CA - Canada 65
CI - Costa d'Avorio 59
MX - Messico 48
NL - Olanda 42
GR - Grecia 39
BG - Bulgaria 36
TH - Thailandia 35
IQ - Iraq 34
CH - Svizzera 33
BE - Belgio 31
PH - Filippine 31
PK - Pakistan 28
PL - Polonia 27
TW - Taiwan 25
EC - Ecuador 23
AT - Austria 22
JO - Giordania 22
ES - Italia 20
ID - Indonesia 20
TR - Turchia 19
CL - Cile 17
MY - Malesia 16
PY - Paraguay 16
CZ - Repubblica Ceca 15
SA - Arabia Saudita 15
AU - Australia 14
CO - Colombia 14
LB - Libano 13
MA - Marocco 12
TN - Tunisia 12
HR - Croazia 11
IL - Israele 10
JM - Giamaica 10
UZ - Uzbekistan 10
CR - Costa Rica 9
EG - Egitto 9
PE - Perù 9
KE - Kenya 8
ET - Etiopia 7
NP - Nepal 7
VE - Venezuela 7
HN - Honduras 6
AZ - Azerbaigian 5
SV - El Salvador 5
AE - Emirati Arabi Uniti 4
BY - Bielorussia 4
DK - Danimarca 4
LT - Lituania 4
TT - Trinidad e Tobago 4
AM - Armenia 3
BO - Bolivia 3
DO - Repubblica Dominicana 3
DZ - Algeria 3
GT - Guatemala 3
NG - Nigeria 3
NI - Nicaragua 3
NZ - Nuova Zelanda 3
PA - Panama 3
SN - Senegal 3
SY - Repubblica araba siriana 3
BA - Bosnia-Erzegovina 2
CU - Cuba 2
GA - Gabon 2
GI - Gibilterra 2
KW - Kuwait 2
KZ - Kazakistan 2
LU - Lussemburgo 2
ME - Montenegro 2
PS - Palestinian Territory 2
RO - Romania 2
TJ - Tagikistan 2
UY - Uruguay 2
XK - ???statistics.table.value.countryCode.XK??? 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AL - Albania 1
AO - Angola 1
Totale 31.237
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Città #
Southend 2.457
Singapore 1.842
Fairfield 1.294
Ashburn 886
Santa Clara 862
San Jose 814
Hong Kong 633
Wilmington 606
Woodbridge 597
Houston 587
Jacksonville 584
Seattle 536
Ho Chi Minh City 525
Princeton 466
Hanoi 451
Chandler 440
Cambridge 428
Council Bluffs 408
Ann Arbor 365
Dong Ket 289
Beijing 283
Boardman 276
Hefei 274
Dublin 267
Nanjing 224
Tokyo 223
Lauterbourg 220
Westminster 218
Padova 215
Los Angeles 158
Lomé 148
Berlin 141
Milan 131
Jinan 126
Buffalo 108
Saint Petersburg 108
Dallas 107
Mülheim 106
Medford 105
Shenyang 101
New York 96
Turin 93
Bologna 86
Hebei 81
San Diego 77
Mahé 75
Changsha 73
Seoul 73
The Dalles 72
Nanchang 70
Haiphong 66
Da Nang 60
Tianjin 60
Abidjan 59
Helsinki 59
Pune 55
Tongling 55
Guangzhou 53
Shanghai 46
Hangzhou 45
Redondo Beach 45
Jiaxing 43
Des Moines 42
Chicago 41
Falls Church 40
São Paulo 40
Zhengzhou 40
Frankfurt am Main 38
Verona 37
Sofia 36
Yubileyny 34
Munich 33
Ningbo 33
Lanzhou 31
Dearborn 30
Hải Dương 30
Phoenix 30
Shenzhen 30
Rome 28
Norwalk 27
San Francisco 24
Bengaluru 23
Fuzhou 23
Amman 22
Brooklyn 22
Brussels 22
Olalla 22
San Venanzo 22
London 21
Orem 21
Bangkok 20
Bremen 20
Can Tho 19
Haikou 19
Taizhou 19
Kunming 18
Moscow 18
Quận Bình Thạnh 18
Ninh Bình 17
Stockholm 17
Totale 21.078
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Nome #
Two dimensional electron gas (2DEG) density in nearly lattice matched InxAl1-xN/AlN/GaN (x=14%) HEMTs 255
n+/p diodes Realized in SiC by 300°C Phosphorus ion implantation: electrical characterizaztion as a function of temperature 242
Short term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy 232
Surface Photovoltage Spectroscopy of Semiconductor Nanostructures 232
Preparation of Ni2Si contacts: effect on SiC diode operation 228
Electronic transitions at defect states in Cz p-type silicon 224
OPTICAL AND ELECTRICAL PROPERTIES OF HYDROGENATED MICROCRYSTALLINE SILICON FILMS 224
Irradiation effects on the compensation of semi-insulating GaAs for particle detector application 218
Laboratori Aperti del Dipartimento di Fisica 217
Anisotropic charge transport in organic single crystals based on dipolar molecules 215
Advanced Characterization Techniques 207
Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy 202
A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy 202
Deep Levels by proton- and electron-irradiation in 4H-SiC 200
Low temperature annealing of electron irradiation induced defects in 4H-SiC 196
4H-SiC band structure investigated by surface photovoltage spectroscopy 187
Mott barrier behavior by enhanced donorlike level neutralization in semi-insulating GaAs Schottky diodes 186
Solution-Grown, Macroscopic Organic Single Crystals Exhibiting Three-Dimensional Anisotropic Charge-Transport Properties 186
Recovery of radiation damage in CdTe detectors 184
Anisotropic transport properties of organic single crystals 184
Anisotropic charge transport in organic single crystals based on dipolar molecules 183
Band bowing and Si donor levels in InGaN layers investigated by surface photo voltage spectroscopy 181
Advanced model of silicon edgeless detector operation 180
Damage induced by ionizing radiation on CdZnTe and CdTe detectors 179
Surface and Defect States in Semiconductors Investigated by Surface PhotovoltageDefects in Semiconductors 178
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects 177
Progetto Lauree Scientifiche 176
X-ray irradiation effects on the trapping properties of Cd1−xZnxTe detectors 176
Three-dimensional anisotropic density of states distribution and intrinsic-like mobility in organic single crystals 175
Radiation damage induced by 2 MeV protons in CdTe and CdZnTe planar detectors 173
Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy 173
Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC 172
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms 172
Progetto lauree Scientifiche-Fisica 171
Recovery of radiation damage in CdTe and CdZnTe detectors 170
Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures 170
Time and thermal recovery of irradiated CdZnTe detectors 169
Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes 169
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes 168
Study of the structural, optical and electrical properties of extended defects in GaN 167
Nanocrack-induced leakage current in AlInN/AlN/GaN 167
Electronic levels introduced by irradiation in silicon carbide. 166
On the Interaction of Dislocations with Impurities in Silicon 165
Electrical properties of extended defects in III-nitrides 165
Silicon carbide and its use as a radiation detector material 164
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based LEDs 164
Electrical properties of dislocations in III-Nitrides 164
Two dimensional electron gas formation in undoped In0.75Ga0.25As/In0.75Al0.25As quantum well 163
Degeneracy and instability of nanocontacts between conductive tips and hydrogenated nanocrystalline Si surfaces in conductive atomic force microscopy 163
Characterization of polycrystalline 3CB-SiC thin films for MEMS and pressure sensors application 161
Defect Distribution along Single GaN Nanowhiskers 161
Bundling of GaAs Nanowires: A Case of Adhesion-Induced Self-Assembly of Nanowires 161
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs 161
An investigation of the gate role on the electrical chracteristics of OFETs 160
Electronic Level Scheme in Boron- and Phosphorus-Doped Silicon Nanowires 159
Franz-Keldysh effect in GaN nanowires 159
Mono and multi-crystalline Silicon characterization by Non-Contacting Techniques 159
Micro- and nano-structures in silicon studied by DLTS and scanning probe methods 158
Conduction Mechanisms in Al0.84In0.16N/AlN/GaN investigated at the nanoscale 158
Surface Photovoltage Spectroscopy Analyses of Cd1-x ZnxTe 157
Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes 155
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs 155
Dislocations, extended defects and interfaces at nanoparticles as effective sources of room temperature photo- and electro-luminescence in silicon and silicon-germanium 155
Properties of Si nanowires as a function of their growth conditions 155
Extended Defects in Semiconductors 154
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy 154
Recovery effect of electron irradiated 4H-SiC Schottky diodes 153
Proceedings of the 23rd European Photovoltaic Solar Energy Conference and Exhibition, Valencia, 2008 153
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes 152
Defect States in nc-Si:H investigated by surface photovoltage spectroscopy 152
Electrical properties of the sensitive side in Si edgeless detectors 152
Thickness-related features observed in GaN epitaxial layers 151
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices 151
Nanocrystalline Silicon Films as Multifunctional Material for Optoelectronic and Photovoltaic Applications 150
Radiation-induced effects in GaN by photoconductivity analysis 150
Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices 150
Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures 149
Photocurrent spectroscopy of ion-implanted organic thin film transistors 149
Preparing the way for doping wurtzite silicon nanowires while retaining the phase 148
Charge collecting properties of proton irradiated CdTe detectors 147
Effects of single-layer Shockley stacking faults on the transport properties of high-purity semi-insulating 4H–SiC 147
15th International Conference on room temperature semiconductor x- and gamma-ray detectors 147
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 147
Conduction mechanisms in silicon nano-dots/SiC:Si systems investigated by macroscopical and microscopical analyses 146
Indium segregation in AlInN/AlN/GaN heterostructures 145
Impact of AlN Spacer on Metal–Semiconductor–Metal Pt–InAlGaN/GaN Heterostructures for Ultraviolet Detection 144
Yellow and green bands in GaN by resolved spectral photoconductivity 144
Electrical activity of deep traps in high resistivity CdTe: Spectroscopic characterization 144
Aging control of organic thin film transistors via ion-implantation 143
Mobility-limiting mechanisms in polar semiconductor heterostructures 143
Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing 143
Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures 142
Strain distribution and defect analysis in III-nitrides by dynamical AFM analysis 142
Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds 142
Investigation on Localized States in GaN Nanowires 142
Investigation of deep level defects in CdTe thin films 142
Minority Carrier Diffusion Lengths in Multi-crystalline Silicon Wafers and Solar Cells 141
Surface Photovoltage Spectroscopy. Method and Applications. 140
X-Ray Irradiation Effects on the Trapping Properties of Cd(1-x)ZnxTe Detectors 140
Correlating photocurrent spectra and electrical transport parameters in organic field effect transistors 139
Totale 16.833
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Categoria #
all - tutte 89.674
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 89.674
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20222.720 0 80 238 185 342 276 97 225 119 107 439 612
2022/20233.082 387 512 193 400 152 162 85 184 457 89 313 148
2023/2024802 57 127 64 64 84 215 40 39 19 49 13 31
2024/20254.106 99 789 257 239 1.106 156 265 68 40 62 97 928
2025/20268.951 679 753 1.051 612 1.005 583 828 569 1.651 495 292 433
2026/2027580 198 382 0 0 0 0 0 0 0 0 0 0
Totale 31.584