We report on the defect influence on the electrical properties of 4H-SiC Schottky diodes. The devices were fabricated on a n-type epilayer treated by chemical mechanical polishing. A surface defect map allows to correlate the defect presence to the electrical behavior of the devices. We find that the devices realized on a free defect zone and on micropipes do not show important differences in electrical parameters.
S.Porro, S.Ferrero, F.Giorgis, C.F.Pirri, D.Perrone, U.Meotto, et al. (2004). Defect influence on the electrcal properties of 4H-SiC Schottky Diodes. Uetikon : Trans Tech Publications Limited [10.4028/www.scientific.net/MSF.457-460.1081].
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes
CAVALLINI, ANNA;CASTALDINI, ANTONIO;ROSSI, MARCO
2004
Abstract
We report on the defect influence on the electrical properties of 4H-SiC Schottky diodes. The devices were fabricated on a n-type epilayer treated by chemical mechanical polishing. A surface defect map allows to correlate the defect presence to the electrical behavior of the devices. We find that the devices realized on a free defect zone and on micropipes do not show important differences in electrical parameters.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
