We report on the defect influence on the electrical properties of 4H-SiC Schottky diodes. The devices were fabricated on a n-type epilayer treated by chemical mechanical polishing. A surface defect map allows to correlate the defect presence to the electrical behavior of the devices. We find that the devices realized on a free defect zone and on micropipes do not show important differences in electrical parameters.
Titolo: | Defect influence on the electrcal properties of 4H-SiC Schottky Diodes |
Autore/i: | S. Porro; S. Ferrero; F. Giorgis; C. F. Pirri; D. Perrone; U. Meotto; P. Mandracci; L. Scaltrito; G. Richieri; L. Merlin; CAVALLINI, ANNA; CASTALDINI, ANTONIO; ROSSI, MARCO |
Autore/i Unibo: | |
Anno: | 2004 |
Serie: | |
Titolo del libro: | Silicon Carbide and Related Materials 2003 |
Pagina iniziale: | 1081 |
Pagina finale: | 1084 |
Digital Object Identifier (DOI): | http://dx.doi.org/10.4028/www.scientific.net/MSF.457-460.1081 |
Abstract: | We report on the defect influence on the electrical properties of 4H-SiC Schottky diodes. The devices were fabricated on a n-type epilayer treated by chemical mechanical polishing. A surface defect map allows to correlate the defect presence to the electrical behavior of the devices. We find that the devices realized on a free defect zone and on micropipes do not show important differences in electrical parameters. |
Data prodotto definitivo in UGOV: | 17-ott-2005 |
Appare nelle tipologie: | 2.01 Capitolo / saggio in libro |
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