Low temperature annealing of electron irradiation-induced deep levels in 4H-SiC is reported. The major deep level transient spectroscopy peak S2 associated with the energy level at Ec−0.39 eV disappears in the temperature range 360–400 K, and some rearrangement of the peak S3, associated with the defect Z1 /Z2 with energy level at Ec−0.5/Ec−0.65 eV occurs in the temperature interval 400–470 K. A net free charge carrier concentration increase goes along with the disappearance of peak S2 at Ec−0.39 eV, whereas the charge collection efficiency of the diode does not experience any significant change. An interpretation of the annealing of peak S2 on a microscopic scale is given.
A.Cavallini, A.Castaldini, L.Rigutti, F.Nava (2004). Low temperature annealing of electron irradiation induced defects in 4H-SiC. APPLIED PHYSICS LETTERS, 85, 3780-3782 [10.1063/1.1810627].
Low temperature annealing of electron irradiation induced defects in 4H-SiC
CAVALLINI, ANNA;CASTALDINI, ANTONIO;RIGUTTI, LORENZO;
2004
Abstract
Low temperature annealing of electron irradiation-induced deep levels in 4H-SiC is reported. The major deep level transient spectroscopy peak S2 associated with the energy level at Ec−0.39 eV disappears in the temperature range 360–400 K, and some rearrangement of the peak S3, associated with the defect Z1 /Z2 with energy level at Ec−0.5/Ec−0.65 eV occurs in the temperature interval 400–470 K. A net free charge carrier concentration increase goes along with the disappearance of peak S2 at Ec−0.39 eV, whereas the charge collection efficiency of the diode does not experience any significant change. An interpretation of the annealing of peak S2 on a microscopic scale is given.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
