RIGUTTI, LORENZO
RIGUTTI, LORENZO
Preface of the Special Issue: Special Issue: III-Nitride Nanostructures Preface
2016 Cavalcoli, Daniela; Cros, Ana; Rigutti, Lorenzo
Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes
2009 L Rigutti; L Basiricò; A Cavallini; M Meneghini; G Meneghesso; E Zanoni
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based LEDs
2008 M. Meneghini; L. Rigutti; L.R. Trevisanello; A. Cavallini; G. Meneghesso; E. Zanoni
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes
2008 L. Rigutti;A. Castaldini; A. Cavallini
Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes
2008 L. Rigutti; M. Meneghini; A. Castaldini; A. Cavallini
Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC
2006 A. Castaldini; A. Cavallini; L. Rigutti
Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC
2006 A., Castaldini; A., Cavallini; L. Rigutti; S. Pizzini; A. Le Donne; and S. Binetti
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes
2006 F. Rossi; M. Pavesi; M. Meneghini; G. Salviati; M. Manfredi; G. Meneghesso; A. Castaldini; A. Cavallini; L. Rigutti; U. Strauss; U. Zehnder; E. Zanoni
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy
2006 A. Castaldini; A. Cavallini; L. Rigutti; M. Meneghini; S.Levada; E. Zanoni; G. Meneghesso; V. Haerle; T. Zahner; U. Zehnder
Deep Levels by proton- and electron-irradiation in 4H-SiC
2005 A. Cavallini; A.Castaldini; L. Rigutti; F. Nava; C.F. Pirri; S. Ferrero;
Electronic levels introduced by irradiation in silicon carbide.
2005 A.Castaldini; A. Cavallini; L.Rigutti; F.Nava;
Short term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy
2005 A. Castaldini; A. Cavallini; L.Rigutti; M.Meneghini; S. Levada; G. Meneghesso; E. Zanoni; V. Harle; T. Zahner; U. Zehnder;
Low temperature annealing of electron irradiation induced defects in 4H-SiC
2004 A.Cavallini; A.Castaldini; L.Rigutti; F.Nava;
Recovery effect of electron irradiated 4H-SiC Schottky diodes
2004 A.Cavallini; A.Castaldini; L.Rigutti; F.Nava; P.Vanni; P.G.Fuochi;
Silicon Carbide for alpha, beta, ion and soft X-ray high performance detectors
2004 G. Bertuccio; S. Binetti; S. Caccia; R. Casiraghi; A. Castaldini; A. Cavallini; L.Rigutti; C. Lanzieri; A. Le Donne; F. Nava; S. Pizzini; E. Vittone.
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Preface of the Special Issue: Special Issue: III-Nitride Nanostructures Preface | Cavalcoli, Daniela; Cros, Ana; Rigutti, Lorenzo | 2016-01-01 | - | Elsevier | 2.02 Prefazione | - |
| Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes | L Rigutti; L Basiricò; A Cavallini; M Meneghini; G Meneghesso; E Zanoni | 2009-01-01 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - | 1.01 Articolo in rivista | - |
| A model for the thermal degradation of metal/(p-GaN) interface in GaN-based LEDs | M. Meneghini; L. Rigutti; L.R. Trevisanello; A. Cavallini; G. Meneghesso; E. Zanoni | 2008-01-01 | JOURNAL OF APPLIED PHYSICS | - | 1.01 Articolo in rivista | - |
| Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes | L. Rigutti;A. Castaldini; A. Cavallini | 2008-01-01 | PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS | - | 1.01 Articolo in rivista | - |
| Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes | L. Rigutti; M. Meneghini; A. Castaldini; A. Cavallini | 2008-01-01 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - | 1.01 Articolo in rivista | - |
| Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC | A. Castaldini; A. Cavallini; L. Rigutti | 2006-01-01 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - | 1.01 Articolo in rivista | - |
| Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC | A., Castaldini; A., Cavallini; L. Rigutti; S. Pizzini; A. Le Donne; and S. Binetti | 2006-01-01 | JOURNAL OF APPLIED PHYSICS | - | 1.01 Articolo in rivista | - |
| Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes | F. Rossi; M. Pavesi; M. Meneghini; G. Salviati; M. Manfredi; G. Meneghesso; A. Castaldini; A. Cav...allini; L. Rigutti; U. Strauss; U. Zehnder; E. Zanoni | 2006-01-01 | JOURNAL OF APPLIED PHYSICS | - | 1.01 Articolo in rivista | - |
| Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy | A. Castaldini; A. Cavallini; L. Rigutti; M. Meneghini; S.Levada; E. Zanoni; G. Meneghesso; V. Hae...rle; T. Zahner; U. Zehnder | 2006-01-01 | - | M. KUBALL, T. H. MYERS, J. M. REDWING | 4.01 Contributo in Atti di convegno | - |
| Deep Levels by proton- and electron-irradiation in 4H-SiC | A. Cavallini; A.Castaldini; L. Rigutti; F. Nava; C.F. Pirri; S. Ferrero; | 2005-01-01 | JOURNAL OF APPLIED PHYSICS | - | 1.01 Articolo in rivista | - |
| Electronic levels introduced by irradiation in silicon carbide. | A.Castaldini; A. Cavallini; L.Rigutti; F.Nava; | 2005-01-01 | - | Trans Tech Publications | 4.01 Contributo in Atti di convegno | - |
| Short term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy | A. Castaldini; A. Cavallini; L.Rigutti; M.Meneghini; S. Levada; G. Meneghesso; E. Zanoni; V. Harl...e; T. Zahner; U. Zehnder; | 2005-01-01 | PHYSICA STATUS SOLIDI C | - | 1.01 Articolo in rivista | - |
| Low temperature annealing of electron irradiation induced defects in 4H-SiC | A.Cavallini; A.Castaldini; L.Rigutti; F.Nava; | 2004-01-01 | APPLIED PHYSICS LETTERS | - | 1.01 Articolo in rivista | - |
| Recovery effect of electron irradiated 4H-SiC Schottky diodes | A.Cavallini; A.Castaldini; L.Rigutti; F.Nava; P.Vanni; P.G.Fuochi; | 2004-01-01 | MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS | - | 1.01 Articolo in rivista | - |
| Silicon Carbide for alpha, beta, ion and soft X-ray high performance detectors | G. Bertuccio; S. Binetti; S. Caccia; R. Casiraghi; A. Castaldini; A. Cavallini; L.Rigutti; C. Lan...zieri; A. Le Donne; F. Nava; S. Pizzini; E. Vittone. | 2004-01-01 | MATERIALS SCIENCE FORUM | - | 4.01 Contributo in Atti di convegno | - |