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RIGUTTI, LORENZO

RIGUTTI, LORENZO  

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Titolo Autore(i) Anno Periodico Editore Tipo File
Preface of the Special Issue: Special Issue: III-Nitride Nanostructures Preface Cavalcoli, Daniela; Cros, Ana; Rigutti, Lorenzo 2016-01-01 - Elsevier 2.02 Prefazione -
Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes L Rigutti; L Basiricò; A Cavallini; M Meneghini; G Meneghesso; E Zanoni 2009-01-01 SEMICONDUCTOR SCIENCE AND TECHNOLOGY - 1.01 Articolo in rivista -
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based LEDs M. Meneghini; L. Rigutti; L.R. Trevisanello; A. Cavallini; G. Meneghesso; E. Zanoni 2008-01-01 JOURNAL OF APPLIED PHYSICS - 1.01 Articolo in rivista -
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes L. Rigutti;A. Castaldini; A. Cavallini 2008-01-01 PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS - 1.01 Articolo in rivista -
Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes L. Rigutti; M. Meneghini; A. Castaldini; A. Cavallini 2008-01-01 SEMICONDUCTOR SCIENCE AND TECHNOLOGY - 1.01 Articolo in rivista -
Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC A. Castaldini; A. Cavallini; L. Rigutti 2006-01-01 SEMICONDUCTOR SCIENCE AND TECHNOLOGY - 1.01 Articolo in rivista -
Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC A., Castaldini; A., Cavallini; L. Rigutti; S. Pizzini; A. Le Donne; and S. Binetti 2006-01-01 JOURNAL OF APPLIED PHYSICS - 1.01 Articolo in rivista -
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes F. Rossi; M. Pavesi; M. Meneghini; G. Salviati; M. Manfredi; G. Meneghesso; A. Castaldini; A. Cav... espandiallini; L. Rigutti; U. Strauss; U. Zehnder; E. Zanoni 2006-01-01 JOURNAL OF APPLIED PHYSICS - 1.01 Articolo in rivista -
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy A. Castaldini; A. Cavallini; L. Rigutti; M. Meneghini; S.Levada; E. Zanoni; G. Meneghesso; V. Hae... espandirle; T. Zahner; U. Zehnder 2006-01-01 - M. KUBALL, T. H. MYERS, J. M. REDWING 4.01 Contributo in Atti di convegno -
Deep Levels by proton- and electron-irradiation in 4H-SiC A. Cavallini; A.Castaldini; L. Rigutti; F. Nava; C.F. Pirri; S. Ferrero; 2005-01-01 JOURNAL OF APPLIED PHYSICS - 1.01 Articolo in rivista -
Electronic levels introduced by irradiation in silicon carbide. A.Castaldini; A. Cavallini; L.Rigutti; F.Nava; 2005-01-01 - Trans Tech Publications 4.01 Contributo in Atti di convegno -
Short term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy A. Castaldini; A. Cavallini; L.Rigutti; M.Meneghini; S. Levada; G. Meneghesso; E. Zanoni; V. Harl... espandie; T. Zahner; U. Zehnder; 2005-01-01 PHYSICA STATUS SOLIDI C - 1.01 Articolo in rivista -
Low temperature annealing of electron irradiation induced defects in 4H-SiC A.Cavallini; A.Castaldini; L.Rigutti; F.Nava; 2004-01-01 APPLIED PHYSICS LETTERS - 1.01 Articolo in rivista -
Recovery effect of electron irradiated 4H-SiC Schottky diodes A.Cavallini; A.Castaldini; L.Rigutti; F.Nava; P.Vanni; P.G.Fuochi; 2004-01-01 MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS - 1.01 Articolo in rivista -
Silicon Carbide for alpha, beta, ion and soft X-ray high performance detectors G. Bertuccio; S. Binetti; S. Caccia; R. Casiraghi; A. Castaldini; A. Cavallini; L.Rigutti; C. Lan... espandizieri; A. Le Donne; F. Nava; S. Pizzini; E. Vittone. 2004-01-01 MATERIALS SCIENCE FORUM - 4.01 Contributo in Atti di convegno -