The effects of low-temperature annealing in 8.2 MeV electron-irradiated 4H-SiC Schottky diodes were investigated. Deep-level transient spectroscopy and minority-carrier diffusion length Ld measurements were carried out on not-irradiated samples and on irradiated samples before and after thermal treatments up to T=450 ° C. We found that several deep levels in the upper half band gap S1 with enthalpy E T =0.27 eV, S2 with E T =0.35 eV, S4 with E T =0.71 eV, and S5 with E T =0.96 eV anneal out or modify at temperature values lower or equal to T=450 ° C, whereby their progressive annealing out is accompanied by a net increase of L d , up to 50% of the value in the as-irradiated sample. We drew some conclusions regarding the microscopic nature of the defects related to the deep levels, according to their annealing behavior.

Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC

CASTALDINI, ANTONIO;CAVALLINI, ANNA;RIGUTTI, LORENZO;
2006

Abstract

The effects of low-temperature annealing in 8.2 MeV electron-irradiated 4H-SiC Schottky diodes were investigated. Deep-level transient spectroscopy and minority-carrier diffusion length Ld measurements were carried out on not-irradiated samples and on irradiated samples before and after thermal treatments up to T=450 ° C. We found that several deep levels in the upper half band gap S1 with enthalpy E T =0.27 eV, S2 with E T =0.35 eV, S4 with E T =0.71 eV, and S5 with E T =0.96 eV anneal out or modify at temperature values lower or equal to T=450 ° C, whereby their progressive annealing out is accompanied by a net increase of L d , up to 50% of the value in the as-irradiated sample. We drew some conclusions regarding the microscopic nature of the defects related to the deep levels, according to their annealing behavior.
2006
A., Castaldini; A., Cavallini; L. Rigutti; S. Pizzini; A. Le Donne; and S. Binetti
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/24058
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 5
  • ???jsp.display-item.citation.isi??? 5
social impact