We report on the modification in the density of states of a multi-quantum well system of InGaN/GaN-based light emitting diodes. The modification was induced by dc current stress at I = 50 mA (current density J = 55 A cm−2) with stress times up to 100 h. The samples were characterized by means of current–voltage and capacitance–voltage, and photocurrent spectroscopy at different stress stages. We observed a progressive redistribution of the conduction band charge in the multi-quantum well system, along with a modification of the shape of the photocurrent spectrum.
Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes / L Rigutti; L Basiricò; A Cavallini; M Meneghini; G Meneghesso; E Zanoni. - In: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - ISSN 0268-1242. - STAMPA. - 24:(2009), pp. 055015-055019. [10.1088/0268-1242/24/5/055015]
Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes
RIGUTTI, LORENZO;BASIRICO', LAURA;CAVALLINI, ANNA;
2009
Abstract
We report on the modification in the density of states of a multi-quantum well system of InGaN/GaN-based light emitting diodes. The modification was induced by dc current stress at I = 50 mA (current density J = 55 A cm−2) with stress times up to 100 h. The samples were characterized by means of current–voltage and capacitance–voltage, and photocurrent spectroscopy at different stress stages. We observed a progressive redistribution of the conduction band charge in the multi-quantum well system, along with a modification of the shape of the photocurrent spectrum.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
