Extended Defects in Semiconductors

Cavallini, Anna; University of Bologna,; Italy Cor Claeys IMEC,; Leuven,; Belgium Tadeusz Figielski Institute of Physics PAS,; Warsaw,; Poland Amand George Ecoles de Mines,; Nantes,; France Malcolm Heggie University of Sussex,; Brighton,; UK Robert Hull University of Virginia,; Charlottesville,; USA Robert Jones University of Exeter,; UK Martin Kittler IHP Frankfurt,; IHP/BTU Joint Lab Cottbus,; Kveder Institute of Solid State Physics RAS, Germany Vitaly V.; Chernogolovka,; Russia Bernard Pichaud Université Aix Marseille III,; Marseille,; France Pirouz Pirouz Case Western Reserve University,; Cleveland,; USA Sergio Pizzini University of Milano Bicocca,; Italy Wolfgang Schröter Georg August University Göttingen,; Strunk University of Erlangen Nürnberg, Germany Horst P.; Germany Guy Vanderschaeve CEMES CNRS,; Toulouse,; Weber University of California, France Eicke R.; Berkeley,; USA Tadeusz Wosinski Institute of Physics PAS,; Warsaw,; Poland Ichiro Yonenaga Institute of Material Research,; University, Tohoku; Japan,

Aim of the conference is to provide a forum on the current state of art of investigation and modeling of extended defects in semiconductors. Scientists from universities, research institutes, and industry give their contributions to a deeper understanding of extended defects, their interaction with point defects, and their role in the development of semiconductor technology.

A.Cavallini, University of Bologna, Italy Cor Claeys IMEC, Leuven, Belgium Tadeusz Figielski Institute of Physics PAS, Warsaw, et al. (2006). Extended Defects in Semiconductors.