Aim of the conference is to provide a forum on the current state of art of investigation and modeling of extended defects in semiconductors. Scientists from universities, research institutes, and industry give their contributions to a deeper understanding of extended defects, their interaction with point defects, and their role in the development of semiconductor technology.
Extended Defects in Semiconductors / A.Cavallini; University of Bologna; Italy Cor Claeys IMEC; Leuven; Belgium Tadeusz Figielski Institute of Physics PAS; Warsaw; Poland Amand George Ecoles de Mines; Nantes; France Malcolm Heggie University of Sussex; Brighton; UK Robert Hull University of Virginia; Charlottesville; USA Robert Jones University of Exeter; UK Martin Kittler IHP Frankfurt (Oder) and IHP/BTU Joint Lab Cottbus; Germany Vitaly V. Kveder Institute of Solid State Physics RAS; Chernogolovka; Russia Bernard Pichaud Université Aix-Marseille III; Marseille; France Pirouz Pirouz Case Western Reserve University; Cleveland; USA Sergio Pizzini University of Milano-Bicocca; Italy Wolfgang Schröter Georg August University Göttingen; Germany Horst P. Strunk University of Erlangen-Nürnberg; Germany Guy Vanderschaeve CEMES-CNRS; Toulouse; France Eicke R. Weber University of California; Berkeley; USA Tadeusz Wosinski Institute of Physics PAS; Warsaw; Poland Ichiro Yonenaga Institute of Material Research; Tohoku University; Japan. - (2006).
Extended Defects in Semiconductors
CAVALLINI, ANNA;
2006
Abstract
Aim of the conference is to provide a forum on the current state of art of investigation and modeling of extended defects in semiconductors. Scientists from universities, research institutes, and industry give their contributions to a deeper understanding of extended defects, their interaction with point defects, and their role in the development of semiconductor technology.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
