The paper deals with a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation. A review of the characterization methods and electrical contacting issues and how these are related to detector performance is presented.
F. Nava, G. Bertuccio, A. Cavallini, E. Vittone (2008). Silicon carbide and its use as a radiation detector material. MEASUREMENT SCIENCE & TECHNOLOGY, 19, 102001-102026 [10.1088/0957-0233/19/10/102001].
Silicon carbide and its use as a radiation detector material
CAVALLINI, ANNA;
2008
Abstract
The paper deals with a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation. A review of the characterization methods and electrical contacting issues and how these are related to detector performance is presented.File in questo prodotto:
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