CRIS Current Research Information System

CASTALDINI, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 2.238
EU - Europa 1.455
AS - Asia 429
AF - Africa 88
OC - Oceania 7
SA - Sud America 6
Continente sconosciuto - Info sul continente non disponibili 1
Totale 4.224
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Nazione #
US - Stati Uniti d'America 2.234
GB - Regno Unito 480
CN - Cina 218
DE - Germania 204
IT - Italia 173
SE - Svezia 170
UA - Ucraina 148
VN - Vietnam 108
IN - India 87
FR - Francia 66
IE - Irlanda 65
RU - Federazione Russa 60
ZA - Sudafrica 37
EE - Estonia 35
TG - Togo 33
SC - Seychelles 15
BG - Bulgaria 14
GR - Grecia 12
NL - Olanda 8
AU - Australia 6
FI - Finlandia 6
JP - Giappone 6
CH - Svizzera 5
BE - Belgio 4
CA - Canada 4
JO - Giordania 4
BR - Brasile 3
CI - Costa d'Avorio 3
PE - Perù 2
PL - Polonia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AM - Armenia 1
AT - Austria 1
BD - Bangladesh 1
CL - Cile 1
ES - Italia 1
KR - Corea 1
KZ - Kazakistan 1
LB - Libano 1
NZ - Nuova Zelanda 1
RO - Romania 1
SA - Arabia Saudita 1
Totale 4.224
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Città #
Southend 435
Fairfield 402
Ashburn 210
Houston 180
Wilmington 175
Woodbridge 174
Seattle 163
Chandler 131
Cambridge 130
Jacksonville 99
Princeton 98
Ann Arbor 71
Dublin 65
Turin 64
Dong Ket 53
Padova 47
Westminster 47
Nanjing 40
Berlin 35
Lomé 33
San Diego 29
Jinan 25
Saint Petersburg 25
Hebei 23
Mülheim 18
Nanchang 18
Medford 16
Milan 16
Sofia 14
Mahé 13
Shenyang 13
Changsha 12
Jiaxing 12
Tianjin 10
Beijing 8
Mountain View 8
Boardman 7
Bologna 7
Fuzhou 7
Ningbo 7
Norwalk 7
Hangzhou 6
Verona 6
Chicago 5
Dearborn 5
Des Moines 5
Helsinki 5
Pune 5
Redwood City 5
Taizhou 5
Tokyo 5
Amman 4
Amsterdam 4
Bremen 4
Brussels 4
Groningen 4
Guangzhou 4
Haikou 4
Lanzhou 4
Los Angeles 4
Melbourne 4
New York 4
San Francisco 4
Washington 4
Zhengzhou 4
Abidjan 3
Falls Church 3
Frankfurt Am Main 3
Kunming 3
London 3
Olalla 3
São Paulo 3
Toronto 3
Angri 2
Bern 2
Bühl 2
Chiswick 2
Duncan 2
Genzano Di Roma 2
Kiev 2
Lima 2
Nashua 2
Shanghai 2
Almaty 1
Athens 1
Auckland 1
Buffalo 1
Canberra 1
Changchun 1
Ciampino 1
Clearwater 1
Delhi 1
Easton 1
Frankfurt am Main 1
Gazipur 1
Hanoi 1
Hanover 1
Hefei 1
Hounslow 1
Lappeenranta 1
Totale 3.116
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Nome #
Short term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy 156
Electronic transitions at defect states in Cz p-type silicon 137
Deep Levels by proton- and electron-irradiation in 4H-SiC 121
Low temperature annealing of electron irradiation induced defects in 4H-SiC 117
Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy 117
Advanced model of silicon edgeless detector operation 116
n+/p diodes Realized in SiC by 300°C Phosphorus ion implantation: electrical characterizaztion as a function of temperature 110
Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC 105
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs 103
Radiation-induced effects in GaN by photoconductivity analysis 101
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects 100
Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes 99
Electrical properties of the sensitive side in Si edgeless detectors 98
Electronic levels introduced by irradiation in silicon carbide. 97
Electronic Level Scheme in Boron- and Phosphorus-Doped Silicon Nanowires 97
Yellow and green bands in GaN by resolved spectral photoconductivity 97
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy 94
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes 93
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes 93
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms 92
Thickness-related features observed in GaN epitaxial layers 92
Properties of Si nanowires as a function of their growth conditions 92
Optoelectronic properties of GaN epilayers in the region of yellow luminescence 91
Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC 90
Defect states in Czochalski p-type silicon: the role of oxygen and dislocations 87
Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds 86
Recovery effect of electron irradiated 4H-SiC Schottky diodes 85
Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing 85
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 84
X-Ray Irradiation Effects on the Trapping Properties of Cd(1-x)ZnxTe Detectors 82
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs 81
Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices 81
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices 81
Study of short-term instabilities of InGaN/GaN light-emitting diodes by means of capacitance-voltage measurements and deep-level transient spectroscopy 80
Investigation of deep level defects in CdTe thin films 78
Experimental Evidence of Dislocation Related Shallow States in p-Type Si 77
Defect characterization in GaN: Possible influence of dislocations in the yellow-band features 77
Charcaterization of electrical contacts on polycrystalline 3C-SiC thin films 76
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 75
Silicon Carbide for alpha, beta, ion and soft X-ray high performance detectors 74
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 73
Interaction between oxygen and dislocations in p-type silicon 72
On the UV responsivity of neutron irradiated 4H-SiC 72
Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 1016 n/cm2 72
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels 68
False Surface-Trap Signature Induced by Buffer Traps in AlGaN-GaN HEMT 59
Determination of minority-carrier diffusion length by integral properties of electron-beam-induced current profiles 12
Degradation effects at aluminum-silicon schottky diodes 11
Analysis of ∑=3 and ∑=9 twin boundaries in three-crystal silicon ingots 9
Characterisation of surface and near-surface regions in high-purity Cz Si 9
Characterization of bulk and surface properties in semiconductors using non-contacting techniques 8
Determination of bulk and surface transport properties by photocurrent spectral measurements 8
Surface photovoltage analysis of crystalline silicon for photovoltaic applications 5
Surface modifications in Si after rapid thermal annealing 5
Processing effects on the electrical properties of defects in silicon 4
Surface analyses of polycrystalline and Cz-Si wafers 3
Scanning Kelvin probe and surface photovoltage analysis of multicrystalline silicon 3
Hydrogen-induced boron passivation in Cz Si 2
Surface damage in silicon substrates after the SiCl4 dry etch of a poly-Si film 2
Electrical characterization of as-grown and thermally treated 8 inches silicon wafers 1
Totale 4.295
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Categoria #
all - tutte 10.451
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10.451
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201957 0 0 0 0 0 0 0 0 0 0 15 42
2019/20201.518 203 26 17 94 146 165 223 208 212 89 50 85
2020/2021644 150 58 18 54 8 33 5 50 42 45 25 156
2021/2022654 65 16 63 45 61 56 18 53 22 17 102 136
2022/2023853 103 126 50 86 43 59 17 64 118 24 113 50
2023/2024189 13 37 27 21 26 46 4 3 1 11 0 0
Totale 4.295