CRIS Current Research Information System

CASTALDINI, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 2.679
EU - Europa 1.481
AS - Asia 734
AF - Africa 88
OC - Oceania 7
SA - Sud America 6
Continente sconosciuto - Info sul continente non disponibili 1
Totale 4.996
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Nazione #
US - Stati Uniti d'America 2.675
GB - Regno Unito 480
CN - Cina 307
SG - Singapore 216
DE - Germania 206
IT - Italia 180
SE - Svezia 170
UA - Ucraina 149
VN - Vietnam 108
IN - India 87
RU - Federazione Russa 72
FR - Francia 68
IE - Irlanda 65
ZA - Sudafrica 37
EE - Estonia 35
TG - Togo 33
SC - Seychelles 15
BG - Bulgaria 14
GR - Grecia 12
NL - Olanda 9
AU - Australia 6
FI - Finlandia 6
JP - Giappone 6
CH - Svizzera 5
BE - Belgio 4
CA - Canada 4
JO - Giordania 4
BR - Brasile 3
CI - Costa d'Avorio 3
AT - Austria 2
PE - Perù 2
PL - Polonia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AM - Armenia 1
BD - Bangladesh 1
CL - Cile 1
ES - Italia 1
KR - Corea 1
KZ - Kazakistan 1
LB - Libano 1
NZ - Nuova Zelanda 1
RO - Romania 1
SA - Arabia Saudita 1
Totale 4.996
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Città #
Southend 435
Fairfield 402
Santa Clara 309
Ashburn 210
Singapore 194
Houston 180
Wilmington 175
Woodbridge 174
Seattle 163
Chandler 131
Cambridge 130
Jacksonville 99
Princeton 98
Ann Arbor 71
Boardman 67
Turin 66
Dublin 65
Dong Ket 53
Padova 47
Westminster 47
Nanjing 40
Berlin 35
Lomé 33
San Diego 29
Jinan 25
Saint Petersburg 25
Hebei 23
Milan 18
Mülheim 18
Nanchang 18
Medford 16
Shenyang 14
Sofia 14
Changsha 13
Mahé 13
Jiaxing 12
Beijing 11
Tianjin 11
Bologna 9
Ningbo 9
Mountain View 8
Shanghai 8
Fuzhou 7
Guangzhou 7
Hangzhou 7
Norwalk 7
Zhengzhou 7
Verona 6
Amsterdam 5
Chicago 5
Dearborn 5
Des Moines 5
Helsinki 5
Pune 5
Redwood City 5
Taizhou 5
Tokyo 5
Amman 4
Bremen 4
Brussels 4
Groningen 4
Haikou 4
Kunming 4
Lanzhou 4
Los Angeles 4
Melbourne 4
New York 4
Phoenix 4
San Francisco 4
Washington 4
Abidjan 3
Falls Church 3
Frankfurt Am Main 3
London 3
Moscow 3
Olalla 3
São Paulo 3
Toronto 3
Angri 2
Bern 2
Bühl 2
Changchun 2
Chiswick 2
Chongqing 2
Dongguan 2
Dongying 2
Duncan 2
Frankfurt am Main 2
Genzano Di Roma 2
Kiev 2
Lima 2
Linyi 2
Nashua 2
Qingdao 2
Shenzhen 2
Shijiazhuang 2
Tours 2
Wenzhou 2
Almaty 1
Athens 1
Totale 3.722
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Nome #
Short term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy 172
Electronic transitions at defect states in Cz p-type silicon 147
Deep Levels by proton- and electron-irradiation in 4H-SiC 135
Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy 134
Advanced model of silicon edgeless detector operation 132
Low temperature annealing of electron irradiation induced defects in 4H-SiC 127
n+/p diodes Realized in SiC by 300°C Phosphorus ion implantation: electrical characterizaztion as a function of temperature 127
Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC 123
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs 122
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects 119
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy 116
Electronic levels introduced by irradiation in silicon carbide. 114
Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes 113
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes 111
Electronic Level Scheme in Boron- and Phosphorus-Doped Silicon Nanowires 111
Electrical properties of the sensitive side in Si edgeless detectors 111
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms 109
Radiation-induced effects in GaN by photoconductivity analysis 109
Properties of Si nanowires as a function of their growth conditions 109
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes 108
Yellow and green bands in GaN by resolved spectral photoconductivity 107
Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds 104
Optoelectronic properties of GaN epilayers in the region of yellow luminescence 103
Thickness-related features observed in GaN epitaxial layers 102
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs 102
Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing 102
Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC 100
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices 99
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 99
Defect characterization in GaN: Possible influence of dislocations in the yellow-band features 98
X-Ray Irradiation Effects on the Trapping Properties of Cd(1-x)ZnxTe Detectors 97
Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices 97
Recovery effect of electron irradiated 4H-SiC Schottky diodes 96
Defect states in Czochalski p-type silicon: the role of oxygen and dislocations 96
Investigation of deep level defects in CdTe thin films 91
Study of short-term instabilities of InGaN/GaN light-emitting diodes by means of capacitance-voltage measurements and deep-level transient spectroscopy 90
Experimental Evidence of Dislocation Related Shallow States in p-Type Si 89
Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 1016 n/cm2 89
Charcaterization of electrical contacts on polycrystalline 3C-SiC thin films 88
Interaction between oxygen and dislocations in p-type silicon 87
Silicon Carbide for alpha, beta, ion and soft X-ray high performance detectors 87
On the UV responsivity of neutron irradiated 4H-SiC 85
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 84
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 84
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels 81
False Surface-Trap Signature Induced by Buffer Traps in AlGaN-GaN HEMT 71
Characterization of bulk and surface properties in semiconductors using non-contacting techniques 25
Degradation effects at aluminum-silicon schottky diodes 19
Determination of minority-carrier diffusion length by integral properties of electron-beam-induced current profiles 18
Characterisation of surface and near-surface regions in high-purity Cz Si 16
Analysis of ∑=3 and ∑=9 twin boundaries in three-crystal silicon ingots 15
Surface modifications in Si after rapid thermal annealing 14
Determination of bulk and surface transport properties by photocurrent spectral measurements 14
Surface photovoltage analysis of crystalline silicon for photovoltaic applications 13
Scanning Kelvin probe and surface photovoltage analysis of multicrystalline silicon 11
Surface analyses of polycrystalline and Cz-Si wafers 10
Processing effects on the electrical properties of defects in silicon 10
Hydrogen-induced boron passivation in Cz Si 9
Surface damage in silicon substrates after the SiCl4 dry etch of a poly-Si film 9
Electrical characterization of as-grown and thermally treated 8 inches silicon wafers 7
Totale 5.067
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Categoria #
all - tutte 13.199
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 13.199
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.032 0 0 0 0 0 165 223 208 212 89 50 85
2020/2021644 150 58 18 54 8 33 5 50 42 45 25 156
2021/2022654 65 16 63 45 61 56 18 53 22 17 102 136
2022/2023853 103 126 50 86 43 59 17 64 118 24 113 50
2023/2024199 13 37 27 21 26 46 4 3 1 11 1 9
2024/2025762 34 188 58 58 397 27 0 0 0 0 0 0
Totale 5.067