CRIS Current Research Information System

CASTALDINI, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 3.323
AS - Asia 2.448
EU - Europa 1.650
SA - Sud America 183
AF - Africa 118
OC - Oceania 9
Continente sconosciuto - Info sul continente non disponibili 1
Totale 7.732
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Nazione #
US - Stati Uniti d'America 3.289
SG - Singapore 798
CN - Cina 660
GB - Regno Unito 496
VN - Vietnam 495
DE - Germania 223
IT - Italia 194
HK - Hong Kong 182
SE - Svezia 170
UA - Ucraina 152
BR - Brasile 136
FR - Francia 128
IN - India 124
RU - Federazione Russa 107
IE - Irlanda 65
JP - Giappone 45
ZA - Sudafrica 42
KR - Corea 39
EE - Estonia 35
TG - Togo 33
BD - Bangladesh 29
AR - Argentina 20
CA - Canada 16
SC - Seychelles 15
BG - Bulgaria 14
MX - Messico 14
NL - Olanda 14
GR - Grecia 13
IQ - Iraq 13
CI - Costa d'Avorio 12
FI - Finlandia 10
AU - Australia 8
PL - Polonia 8
TH - Thailandia 8
EC - Ecuador 6
PK - Pakistan 6
TW - Taiwan 6
BE - Belgio 5
CH - Svizzera 5
JO - Giordania 5
PH - Filippine 5
SA - Arabia Saudita 5
CL - Cile 4
CO - Colombia 4
ES - Italia 4
KE - Kenya 4
NP - Nepal 4
VE - Venezuela 4
ID - Indonesia 3
MA - Marocco 3
MY - Malesia 3
PE - Perù 3
PY - Paraguay 3
TN - Tunisia 3
AE - Emirati Arabi Uniti 2
AT - Austria 2
BO - Bolivia 2
EG - Egitto 2
KZ - Kazakistan 2
LB - Libano 2
TJ - Tagikistan 2
TR - Turchia 2
TT - Trinidad e Tobago 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AM - Armenia 1
AO - Angola 1
AZ - Azerbaigian 1
BF - Burkina Faso 1
BH - Bahrain 1
BY - Bielorussia 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
GA - Gabon 1
GY - Guiana 1
HN - Honduras 1
KH - Cambogia 1
LT - Lituania 1
ME - Montenegro 1
MN - Mongolia 1
NZ - Nuova Zelanda 1
PS - Palestinian Territory 1
RO - Romania 1
SN - Senegal 1
SY - Repubblica araba siriana 1
UZ - Uzbekistan 1
Totale 7.732
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Città #
Singapore 527
Southend 435
Fairfield 402
Santa Clara 320
Ashburn 262
San Jose 257
Houston 183
Hong Kong 180
Wilmington 175
Woodbridge 174
Seattle 163
Chandler 131
Cambridge 130
Hanoi 109
Hefei 102
Beijing 100
Ho Chi Minh City 99
Jacksonville 99
Princeton 98
Ann Arbor 71
Boardman 70
Turin 66
Dublin 65
Dong Ket 53
Padova 47
Westminster 47
Lauterbourg 42
Nanjing 42
Tokyo 39
Berlin 35
Lomé 33
Buffalo 31
Los Angeles 31
San Diego 29
Seoul 29
Jinan 27
Saint Petersburg 25
Hebei 23
Milan 22
Mülheim 18
Nanchang 18
The Dalles 18
Dallas 17
Haiphong 17
Chicago 16
Medford 16
Da Nang 15
Guangzhou 15
Shenyang 15
Tongling 15
Changsha 14
Sofia 14
Mahé 13
Tianjin 13
Abidjan 12
Bologna 12
Jiaxing 12
São Paulo 12
New York 11
Redondo Beach 11
Shanghai 11
Ningbo 9
San Francisco 9
Hangzhou 8
Helsinki 8
Mountain View 8
Munich 8
Toronto 8
Zhengzhou 8
Des Moines 7
Frankfurt am Main 7
Fuzhou 7
Norwalk 7
Phoenix 7
Chennai 6
Elk Grove Village 6
Mexico City 6
Pune 6
Shenzhen 6
Verona 6
Washington 6
Amman 5
Amsterdam 5
Biên Hòa 5
Brooklyn 5
Brussels 5
Dearborn 5
Hải Dương 5
Long Xuyen 5
Mumbai 5
Orem 5
Quận Ba 5
Redwood City 5
Taizhou 5
Yubileyny 5
Baghdad 4
Bengaluru 4
Bremen 4
Groningen 4
Guarulhos 4
Totale 5.321
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Nome #
n+/p diodes Realized in SiC by 300°C Phosphorus ion implantation: electrical characterizaztion as a function of temperature 239
Short term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy 229
Electronic transitions at defect states in Cz p-type silicon 208
Deep Levels by proton- and electron-irradiation in 4H-SiC 197
Low temperature annealing of electron irradiation induced defects in 4H-SiC 191
Advanced model of silicon edgeless detector operation 176
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects 175
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms 171
Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC 169
Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy 169
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes 165
Electronic levels introduced by irradiation in silicon carbide. 163
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs 160
Electronic Level Scheme in Boron- and Phosphorus-Doped Silicon Nanowires 157
Properties of Si nanowires as a function of their growth conditions 154
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs 153
Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes 152
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices 150
Electrical properties of the sensitive side in Si edgeless detectors 150
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy 149
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes 149
Recovery effect of electron irradiated 4H-SiC Schottky diodes 148
Thickness-related features observed in GaN epitaxial layers 148
Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices 148
Radiation-induced effects in GaN by photoconductivity analysis 147
Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing 143
Yellow and green bands in GaN by resolved spectral photoconductivity 142
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 142
Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds 141
Investigation of deep level defects in CdTe thin films 141
X-Ray Irradiation Effects on the Trapping Properties of Cd(1-x)ZnxTe Detectors 136
Optoelectronic properties of GaN epilayers in the region of yellow luminescence 134
Defect characterization in GaN: Possible influence of dislocations in the yellow-band features 134
Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC 133
Defect states in Czochalski p-type silicon: the role of oxygen and dislocations 130
Study of short-term instabilities of InGaN/GaN light-emitting diodes by means of capacitance-voltage measurements and deep-level transient spectroscopy 128
Charcaterization of electrical contacts on polycrystalline 3C-SiC thin films 124
False Surface-Trap Signature Induced by Buffer Traps in AlGaN-GaN HEMT 123
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 122
Silicon Carbide for alpha, beta, ion and soft X-ray high performance detectors 119
Experimental Evidence of Dislocation Related Shallow States in p-Type Si 118
On the UV responsivity of neutron irradiated 4H-SiC 118
Interaction between oxygen and dislocations in p-type silicon 114
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 114
Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 1016 n/cm2 114
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels 105
Erbium in silicon: Problems and challenges 52
Characterization of bulk and surface properties in semiconductors using non-contacting techniques 48
Surface modifications in Si after rapid thermal annealing 47
Investigation on electrical contacts on n-type silicon 47
Cathodoluminescence and photoinduced current spectroscopy studies of defects iTe 46
Deep energy levels in CdTe and CdZnTe 43
Compensation and deep levels in II-VI compounds 42
Comparison of electrical and luminescence data for the A center in CdTe 40
Determination of minority-carrier diffusion length by integral properties of electron-beam-induced current profiles 38
Role of impurities on diffusion-induced defective states 37
Degradation effects at aluminum-silicon schottky diodes 36
EBIC diffusion length evaluation by the moment method 35
Surface photovoltage analysis of crystalline silicon for photovoltaic applications 35
Junction spectroscopy of highly doped GaAs: detection of the EL2 trap 34
Charge collection mapping of the back-transfer process in Er-doped silicon 33
Midgap traps related to compensation processes in CdTe alloys 33
Characterisation of surface and near-surface regions in high-purity Cz Si 32
The EL2 trap in highly doped GaAs:Te 32
Analysis of ∑=3 and ∑=9 twin boundaries in three-crystal silicon ingots 31
Scanning Kelvin probe and surface photovoltage analysis of multicrystalline silicon 31
Spatial distribution of recombination centers in GaAs:Te: Effects of the doping level 29
Determination of bulk and surface transport properties by photocurrent spectral measurements 26
Hydrogen-induced boron passivation in Cz Si 22
Surface analyses of polycrystalline and Cz-Si wafers 22
Processing effects on the electrical properties of defects in silicon 21
Electrical characterization of as-grown and thermally treated 8 inches silicon wafers 21
Surface damage in silicon substrates after the SiCl4 dry etch of a poly-Si film 18
Totale 7.823
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Categoria #
all - tutte 22.270
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 22.270
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021156 0 0 0 0 0 0 0 0 0 0 0 156
2021/2022654 65 16 63 45 61 56 18 53 22 17 102 136
2022/2023853 103 126 50 86 43 59 17 64 118 24 113 50
2023/2024199 13 37 27 21 26 46 4 3 1 11 1 9
2024/20251.222 34 188 58 58 397 28 89 14 17 19 47 273
2025/20262.296 162 181 290 152 301 167 221 189 412 127 75 19
Totale 7.823