CRIS Current Research Information System

CASTALDINI, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 3.449
AS - Asia 2.464
EU - Europa 1.687
SA - Sud America 185
AF - Africa 119
Continente sconosciuto - Info sul continente non disponibili 93
OC - Oceania 9
Totale 8.006
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Nazione #
US - Stati Uniti d'America 3.404
SG - Singapore 802
CN - Cina 663
VN - Vietnam 501
GB - Regno Unito 496
IT - Italia 230
DE - Germania 223
HK - Hong Kong 185
SE - Svezia 170
UA - Ucraina 152
BR - Brasile 137
FR - Francia 128
IN - India 124
RU - Federazione Russa 107
IE - Irlanda 65
JP - Giappone 45
ZA - Sudafrica 42
KR - Corea 39
EE - Estonia 35
TG - Togo 33
BD - Bangladesh 29
CA - Canada 21
AR - Argentina 20
SC - Seychelles 16
MX - Messico 15
BG - Bulgaria 14
NL - Olanda 14
GR - Grecia 13
IQ - Iraq 13
CI - Costa d'Avorio 12
FI - Finlandia 10
AU - Australia 8
PL - Polonia 8
TH - Thailandia 8
EC - Ecuador 6
PK - Pakistan 6
TW - Taiwan 6
BE - Belgio 5
CH - Svizzera 5
ES - Italia 5
JO - Giordania 5
PH - Filippine 5
SA - Arabia Saudita 5
CL - Cile 4
CO - Colombia 4
KE - Kenya 4
NP - Nepal 4
PY - Paraguay 4
VE - Venezuela 4
ID - Indonesia 3
MA - Marocco 3
MY - Malesia 3
PE - Perù 3
TN - Tunisia 3
AE - Emirati Arabi Uniti 2
AT - Austria 2
BO - Bolivia 2
DO - Repubblica Dominicana 2
EG - Egitto 2
KZ - Kazakistan 2
LB - Libano 2
TJ - Tagikistan 2
TR - Turchia 2
TT - Trinidad e Tobago 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AM - Armenia 1
AO - Angola 1
AZ - Azerbaigian 1
BF - Burkina Faso 1
BH - Bahrain 1
BY - Bielorussia 1
CZ - Repubblica Ceca 1
GA - Gabon 1
GT - Guatemala 1
GY - Guiana 1
HN - Honduras 1
JM - Giamaica 1
KH - Cambogia 1
LT - Lituania 1
ME - Montenegro 1
MN - Mongolia 1
NZ - Nuova Zelanda 1
PR - Porto Rico 1
PS - Palestinian Territory 1
RO - Romania 1
SN - Senegal 1
SV - El Salvador 1
SX - ???statistics.table.value.countryCode.SX??? 1
SY - Repubblica araba siriana 1
UZ - Uzbekistan 1
Totale 7.915
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Città #
Singapore 530
Southend 435
Fairfield 402
Santa Clara 323
Ashburn 263
San Jose 257
Hong Kong 183
Houston 183
Wilmington 175
Woodbridge 174
Seattle 163
Chandler 131
Cambridge 130
Hanoi 113
Beijing 102
Hefei 102
Ho Chi Minh City 101
Jacksonville 99
Princeton 98
Ann Arbor 71
Boardman 70
Turin 66
Dublin 65
Dong Ket 53
Padova 47
Westminster 47
Council Bluffs 46
Lauterbourg 42
Nanjing 42
Milan 40
Tokyo 39
Berlin 35
Lomé 33
Buffalo 31
Los Angeles 31
San Diego 31
Seoul 29
Jinan 27
Saint Petersburg 25
Hebei 23
Chicago 18
Mülheim 18
Nanchang 18
The Dalles 18
Dallas 17
Haiphong 17
Medford 16
Da Nang 15
Guangzhou 15
Shenyang 15
Tongling 15
Changsha 14
Sofia 14
Bologna 13
Mahé 13
Tianjin 13
Abidjan 12
Jiaxing 12
New York 12
São Paulo 12
Redondo Beach 11
Shanghai 11
Hangzhou 9
Ningbo 9
San Francisco 9
Helsinki 8
Mountain View 8
Munich 8
Toronto 8
Zhengzhou 8
Brooklyn 7
Des Moines 7
Frankfurt am Main 7
Fuzhou 7
Mexico City 7
Norwalk 7
Phoenix 7
Chennai 6
Elk Grove Village 6
Pune 6
Shenzhen 6
Verona 6
Washington 6
Amman 5
Amsterdam 5
Biên Hòa 5
Brussels 5
Dearborn 5
Hải Dương 5
Long Xuyen 5
Mumbai 5
Orem 5
Quận Ba 5
Redwood City 5
Taizhou 5
Yubileyny 5
Baghdad 4
Bengaluru 4
Bremen 4
Groningen 4
Totale 5.409
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Nome #
n+/p diodes Realized in SiC by 300°C Phosphorus ion implantation: electrical characterizaztion as a function of temperature 241
Short term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy 231
Electronic transitions at defect states in Cz p-type silicon 224
Deep Levels by proton- and electron-irradiation in 4H-SiC 199
Low temperature annealing of electron irradiation induced defects in 4H-SiC 195
Advanced model of silicon edgeless detector operation 179
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects 176
Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy 172
Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC 171
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms 171
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes 167
Electronic levels introduced by irradiation in silicon carbide. 165
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs 161
Electronic Level Scheme in Boron- and Phosphorus-Doped Silicon Nanowires 158
Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes 154
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs 154
Properties of Si nanowires as a function of their growth conditions 154
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy 153
Recovery effect of electron irradiated 4H-SiC Schottky diodes 152
Electrical properties of the sensitive side in Si edgeless detectors 151
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes 150
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices 150
Thickness-related features observed in GaN epitaxial layers 149
Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices 149
Radiation-induced effects in GaN by photoconductivity analysis 148
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 146
Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing 143
Yellow and green bands in GaN by resolved spectral photoconductivity 143
Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds 141
Investigation of deep level defects in CdTe thin films 141
X-Ray Irradiation Effects on the Trapping Properties of Cd(1-x)ZnxTe Detectors 139
Optoelectronic properties of GaN epilayers in the region of yellow luminescence 137
Defect characterization in GaN: Possible influence of dislocations in the yellow-band features 134
Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC 133
Study of short-term instabilities of InGaN/GaN light-emitting diodes by means of capacitance-voltage measurements and deep-level transient spectroscopy 132
Defect states in Czochalski p-type silicon: the role of oxygen and dislocations 132
False Surface-Trap Signature Induced by Buffer Traps in AlGaN-GaN HEMT 126
Charcaterization of electrical contacts on polycrystalline 3C-SiC thin films 124
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 123
Experimental Evidence of Dislocation Related Shallow States in p-Type Si 120
Silicon Carbide for alpha, beta, ion and soft X-ray high performance detectors 119
On the UV responsivity of neutron irradiated 4H-SiC 118
Interaction between oxygen and dislocations in p-type silicon 115
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 115
Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 1016 n/cm2 114
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels 106
Erbium in silicon: Problems and challenges 61
Investigation on electrical contacts on n-type silicon 55
Deep energy levels in CdTe and CdZnTe 52
Characterization of bulk and surface properties in semiconductors using non-contacting techniques 51
Surface modifications in Si after rapid thermal annealing 51
Role of impurities on diffusion-induced defective states 49
Cathodoluminescence and photoinduced current spectroscopy studies of defects iTe 47
Comparison of electrical and luminescence data for the A center in CdTe 44
Degradation effects at aluminum-silicon schottky diodes 43
Compensation and deep levels in II-VI compounds 43
EBIC diffusion length evaluation by the moment method 41
Midgap traps related to compensation processes in CdTe alloys 39
Determination of minority-carrier diffusion length by integral properties of electron-beam-induced current profiles 39
Junction spectroscopy of highly doped GaAs: detection of the EL2 trap 37
Surface photovoltage analysis of crystalline silicon for photovoltaic applications 37
Charge collection mapping of the back-transfer process in Er-doped silicon 36
The EL2 trap in highly doped GaAs:Te 36
Spatial distribution of recombination centers in GaAs:Te: Effects of the doping level 35
Analysis of ∑=3 and ∑=9 twin boundaries in three-crystal silicon ingots 34
Scanning Kelvin probe and surface photovoltage analysis of multicrystalline silicon 33
Characterisation of surface and near-surface regions in high-purity Cz Si 33
Determination of bulk and surface transport properties by photocurrent spectral measurements 26
Surface analyses of polycrystalline and Cz-Si wafers 25
Hydrogen-induced boron passivation in Cz Si 22
Processing effects on the electrical properties of defects in silicon 21
Electrical characterization of as-grown and thermally treated 8 inches silicon wafers 21
Surface damage in silicon substrates after the SiCl4 dry etch of a poly-Si film 20
Totale 8.006
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Categoria #
all - tutte 23.390
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 23.390
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022589 0 16 63 45 61 56 18 53 22 17 102 136
2022/2023853 103 126 50 86 43 59 17 64 118 24 113 50
2023/2024199 13 37 27 21 26 46 4 3 1 11 1 9
2024/20251.222 34 188 58 58 397 28 89 14 17 19 47 273
2025/20262.382 162 181 290 152 301 167 221 189 412 127 75 105
2026/202797 51 46 0 0 0 0 0 0 0 0 0 0
Totale 8.006