CRIS Current Research Information System

CASTALDINI, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 3.230
AS - Asia 2.423
EU - Europa 1.648
SA - Sud America 183
AF - Africa 118
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 1
Totale 7.611
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Nazione #
US - Stati Uniti d'America 3.205
SG - Singapore 795
CN - Cina 656
GB - Regno Unito 496
VN - Vietnam 491
DE - Germania 223
IT - Italia 192
HK - Hong Kong 181
SE - Svezia 170
UA - Ucraina 152
BR - Brasile 136
FR - Francia 128
IN - India 124
RU - Federazione Russa 107
IE - Irlanda 65
JP - Giappone 45
ZA - Sudafrica 42
KR - Corea 39
EE - Estonia 35
TG - Togo 33
AR - Argentina 20
BD - Bangladesh 16
SC - Seychelles 15
BG - Bulgaria 14
NL - Olanda 14
GR - Grecia 13
IQ - Iraq 13
CI - Costa d'Avorio 12
MX - Messico 12
CA - Canada 10
FI - Finlandia 10
PL - Polonia 8
TH - Thailandia 8
AU - Australia 7
EC - Ecuador 6
PK - Pakistan 6
TW - Taiwan 6
BE - Belgio 5
CH - Svizzera 5
JO - Giordania 5
PH - Filippine 5
SA - Arabia Saudita 5
CL - Cile 4
CO - Colombia 4
ES - Italia 4
KE - Kenya 4
NP - Nepal 4
VE - Venezuela 4
ID - Indonesia 3
MA - Marocco 3
MY - Malesia 3
PE - Perù 3
PY - Paraguay 3
TN - Tunisia 3
AE - Emirati Arabi Uniti 2
AT - Austria 2
BO - Bolivia 2
EG - Egitto 2
KZ - Kazakistan 2
LB - Libano 2
TJ - Tagikistan 2
TR - Turchia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AM - Armenia 1
AO - Angola 1
AZ - Azerbaigian 1
BF - Burkina Faso 1
BH - Bahrain 1
BY - Bielorussia 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
GA - Gabon 1
GY - Guiana 1
HN - Honduras 1
KH - Cambogia 1
LT - Lituania 1
ME - Montenegro 1
MN - Mongolia 1
NZ - Nuova Zelanda 1
PS - Palestinian Territory 1
RO - Romania 1
SN - Senegal 1
SY - Repubblica araba siriana 1
TT - Trinidad e Tobago 1
UZ - Uzbekistan 1
Totale 7.611
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Città #
Singapore 525
Southend 435
Fairfield 402
Santa Clara 316
Ashburn 256
San Jose 244
Houston 182
Hong Kong 179
Wilmington 175
Woodbridge 174
Seattle 163
Chandler 131
Cambridge 130
Hanoi 109
Hefei 102
Beijing 100
Jacksonville 99
Princeton 98
Ho Chi Minh City 95
Ann Arbor 71
Boardman 69
Turin 66
Dublin 65
Dong Ket 53
Padova 47
Westminster 47
Lauterbourg 42
Nanjing 42
Tokyo 39
Berlin 35
Lomé 33
Buffalo 31
San Diego 29
Seoul 29
Los Angeles 28
Jinan 27
Saint Petersburg 25
Hebei 23
Milan 22
Mülheim 18
Nanchang 18
The Dalles 18
Haiphong 17
Medford 16
Da Nang 15
Dallas 15
Guangzhou 15
Shenyang 15
Tongling 15
Changsha 14
Sofia 14
Mahé 13
Tianjin 13
Abidjan 12
Chicago 12
Jiaxing 12
São Paulo 12
Bologna 11
Redondo Beach 11
Shanghai 11
New York 9
Ningbo 9
Hangzhou 8
Helsinki 8
Mountain View 8
Munich 8
Zhengzhou 8
Des Moines 7
Frankfurt am Main 7
Fuzhou 7
Norwalk 7
Chennai 6
Elk Grove Village 6
Phoenix 6
Pune 6
San Francisco 6
Shenzhen 6
Toronto 6
Verona 6
Amman 5
Amsterdam 5
Biên Hòa 5
Brooklyn 5
Brussels 5
Dearborn 5
Hải Dương 5
Long Xuyen 5
Mumbai 5
Quận Ba 5
Redwood City 5
Taizhou 5
Washington 5
Yubileyny 5
Baghdad 4
Bengaluru 4
Bremen 4
Groningen 4
Guarulhos 4
Haikou 4
Kunming 4
Totale 5.267
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Nome #
n+/p diodes Realized in SiC by 300°C Phosphorus ion implantation: electrical characterizaztion as a function of temperature 237
Short term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy 229
Electronic transitions at defect states in Cz p-type silicon 207
Deep Levels by proton- and electron-irradiation in 4H-SiC 195
Low temperature annealing of electron irradiation induced defects in 4H-SiC 191
Advanced model of silicon edgeless detector operation 173
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects 173
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms 171
Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC 168
Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy 168
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes 163
Electronic levels introduced by irradiation in silicon carbide. 163
Electronic Level Scheme in Boron- and Phosphorus-Doped Silicon Nanowires 157
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs 157
Properties of Si nanowires as a function of their growth conditions 154
Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes 151
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy 149
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices 149
Electrical properties of the sensitive side in Si edgeless detectors 149
Thickness-related features observed in GaN epitaxial layers 147
Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices 147
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes 147
Recovery effect of electron irradiated 4H-SiC Schottky diodes 145
Radiation-induced effects in GaN by photoconductivity analysis 144
Yellow and green bands in GaN by resolved spectral photoconductivity 142
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 142
Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing 141
Investigation of deep level defects in CdTe thin films 140
Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds 139
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs 138
X-Ray Irradiation Effects on the Trapping Properties of Cd(1-x)ZnxTe Detectors 135
Defect characterization in GaN: Possible influence of dislocations in the yellow-band features 133
Optoelectronic properties of GaN epilayers in the region of yellow luminescence 132
Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC 132
Defect states in Czochalski p-type silicon: the role of oxygen and dislocations 129
Study of short-term instabilities of InGaN/GaN light-emitting diodes by means of capacitance-voltage measurements and deep-level transient spectroscopy 125
False Surface-Trap Signature Induced by Buffer Traps in AlGaN-GaN HEMT 122
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 122
Charcaterization of electrical contacts on polycrystalline 3C-SiC thin films 121
Silicon Carbide for alpha, beta, ion and soft X-ray high performance detectors 119
On the UV responsivity of neutron irradiated 4H-SiC 117
Experimental Evidence of Dislocation Related Shallow States in p-Type Si 116
Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 1016 n/cm2 114
Interaction between oxygen and dislocations in p-type silicon 113
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 113
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels 101
Characterization of bulk and surface properties in semiconductors using non-contacting techniques 47
Erbium in silicon: Problems and challenges 47
Surface modifications in Si after rapid thermal annealing 46
Investigation on electrical contacts on n-type silicon 45
Cathodoluminescence and photoinduced current spectroscopy studies of defects iTe 44
Compensation and deep levels in II-VI compounds 41
Deep energy levels in CdTe and CdZnTe 40
Role of impurities on diffusion-induced defective states 36
Determination of minority-carrier diffusion length by integral properties of electron-beam-induced current profiles 36
Comparison of electrical and luminescence data for the A center in CdTe 35
Surface photovoltage analysis of crystalline silicon for photovoltaic applications 34
Degradation effects at aluminum-silicon schottky diodes 33
EBIC diffusion length evaluation by the moment method 33
Analysis of ∑=3 and ∑=9 twin boundaries in three-crystal silicon ingots 30
Scanning Kelvin probe and surface photovoltage analysis of multicrystalline silicon 30
Junction spectroscopy of highly doped GaAs: detection of the EL2 trap 30
Midgap traps related to compensation processes in CdTe alloys 30
The EL2 trap in highly doped GaAs:Te 30
Charge collection mapping of the back-transfer process in Er-doped silicon 29
Characterisation of surface and near-surface regions in high-purity Cz Si 29
Spatial distribution of recombination centers in GaAs:Te: Effects of the doping level 28
Determination of bulk and surface transport properties by photocurrent spectral measurements 26
Hydrogen-induced boron passivation in Cz Si 22
Surface analyses of polycrystalline and Cz-Si wafers 21
Processing effects on the electrical properties of defects in silicon 21
Electrical characterization of as-grown and thermally treated 8 inches silicon wafers 21
Surface damage in silicon substrates after the SiCl4 dry etch of a poly-Si film 18
Totale 7.702
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Categoria #
all - tutte 21.087
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 21.087
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021226 0 0 0 0 0 0 0 0 0 45 25 156
2021/2022654 65 16 63 45 61 56 18 53 22 17 102 136
2022/2023853 103 126 50 86 43 59 17 64 118 24 113 50
2023/2024199 13 37 27 21 26 46 4 3 1 11 1 9
2024/20251.222 34 188 58 58 397 28 89 14 17 19 47 273
2025/20262.175 162 181 290 152 301 167 221 189 412 100 0 0
Totale 7.702