CRIS Current Research Information System

CASTALDINI, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 3.850
AS - Asia 2.484
EU - Europa 1.700
SA - Sud America 200
AF - Africa 121
Continente sconosciuto - Info sul continente non disponibili 93
OC - Oceania 9
Totale 8.457
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Nazione #
US - Stati Uniti d'America 3.796
SG - Singapore 809
CN - Cina 664
GB - Regno Unito 501
VN - Vietnam 501
IT - Italia 236
DE - Germania 223
HK - Hong Kong 187
SE - Svezia 170
UA - Ucraina 152
BR - Brasile 143
FR - Francia 128
IN - India 124
RU - Federazione Russa 107
IE - Irlanda 65
JP - Giappone 46
ZA - Sudafrica 43
KR - Corea 39
EE - Estonia 35
TG - Togo 33
BD - Bangladesh 30
CA - Canada 27
AR - Argentina 20
SC - Seychelles 16
MX - Messico 15
BG - Bulgaria 14
NL - Olanda 14
GR - Grecia 13
IQ - Iraq 13
CI - Costa d'Avorio 12
FI - Finlandia 10
PL - Polonia 9
AU - Australia 8
CO - Colombia 8
TH - Thailandia 8
EC - Ecuador 7
PH - Filippine 7
PK - Pakistan 7
VE - Venezuela 7
ES - Italia 6
TW - Taiwan 6
BE - Belgio 5
CH - Svizzera 5
JO - Giordania 5
NP - Nepal 5
SA - Arabia Saudita 5
CL - Cile 4
ID - Indonesia 4
KE - Kenya 4
MY - Malesia 4
PY - Paraguay 4
MA - Marocco 3
PE - Perù 3
TN - Tunisia 3
TT - Trinidad e Tobago 3
AE - Emirati Arabi Uniti 2
AT - Austria 2
BO - Bolivia 2
DO - Repubblica Dominicana 2
EG - Egitto 2
KZ - Kazakistan 2
LB - Libano 2
TJ - Tagikistan 2
TR - Turchia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AM - Armenia 1
AO - Angola 1
AZ - Azerbaigian 1
BF - Burkina Faso 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BW - Botswana 1
BY - Bielorussia 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
GA - Gabon 1
GP - Guadalupe 1
GT - Guatemala 1
GY - Guiana 1
HN - Honduras 1
JM - Giamaica 1
KH - Cambogia 1
LT - Lituania 1
ME - Montenegro 1
MN - Mongolia 1
NZ - Nuova Zelanda 1
PR - Porto Rico 1
PS - Palestinian Territory 1
QA - Qatar 1
RO - Romania 1
SN - Senegal 1
SV - El Salvador 1
SX - ???statistics.table.value.countryCode.SX??? 1
SY - Repubblica araba siriana 1
UY - Uruguay 1
UZ - Uzbekistan 1
Totale 8.366
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Città #
Singapore 537
Southend 435
Fairfield 402
Santa Clara 325
San Jose 302
Ashburn 289
Hong Kong 185
Houston 184
Wilmington 175
Woodbridge 174
Seattle 165
Council Bluffs 146
Chandler 131
Cambridge 130
Princeton 127
Hanoi 113
Beijing 103
Hefei 102
Ho Chi Minh City 101
Jacksonville 101
Boardman 87
Ann Arbor 71
Turin 66
Dublin 65
Dong Ket 53
Padova 47
Westminster 47
Lauterbourg 42
Nanjing 42
Milan 41
Tokyo 39
Berlin 35
Lomé 33
Los Angeles 33
Buffalo 31
San Diego 31
Seoul 29
Jinan 27
Saint Petersburg 25
Hebei 23
Dallas 20
Chicago 19
The Dalles 19
Mülheim 18
Nanchang 18
Haiphong 17
Medford 16
Da Nang 15
Guangzhou 15
New York 15
Shenyang 15
Tongling 15
Changsha 14
Sofia 14
Bologna 13
Mahé 13
Tianjin 13
Abidjan 12
Jiaxing 12
São Paulo 12
Redondo Beach 11
Shanghai 11
Hangzhou 9
Ningbo 9
Phoenix 9
San Francisco 9
Toronto 9
Brooklyn 8
Helsinki 8
Mountain View 8
Munich 8
Zhengzhou 8
Atlanta 7
Des Moines 7
Frankfurt am Main 7
Fuzhou 7
Mexico City 7
Norwalk 7
Tampa 7
Chennai 6
Elk Grove Village 6
Pune 6
Shenzhen 6
Verona 6
Washington 6
Amman 5
Amsterdam 5
Biên Hòa 5
Brussels 5
Dearborn 5
Guarulhos 5
Hải Dương 5
Long Xuyen 5
Mumbai 5
Orem 5
Quận Ba 5
Redwood City 5
Rio de Janeiro 5
Rome 5
Taizhou 5
Totale 5.666
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Nome #
n+/p diodes Realized in SiC by 300°C Phosphorus ion implantation: electrical characterizaztion as a function of temperature 246
Short term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy 240
Electronic transitions at defect states in Cz p-type silicon 233
Deep Levels by proton- and electron-irradiation in 4H-SiC 208
Low temperature annealing of electron irradiation induced defects in 4H-SiC 205
Advanced model of silicon edgeless detector operation 188
Cold field electron emission of large-area arrays of SiC nanowires: photo-enhancement and saturation effects 181
Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms 180
Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC 179
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes 177
Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy 177
Electronic levels introduced by irradiation in silicon carbide. 173
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs 166
Electronic Level Scheme in Boron- and Phosphorus-Doped Silicon Nanowires 165
Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes 162
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs 160
Recovery effect of electron irradiated 4H-SiC Schottky diodes 158
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes 158
Properties of Si nanowires as a function of their growth conditions 158
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy 157
Thickness-related features observed in GaN epitaxial layers 156
Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices 156
Radiation-induced effects in GaN by photoconductivity analysis 155
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices 155
Electrical properties of the sensitive side in Si edgeless detectors 155
Optoelectronic properties of GaN epilayers in the region of yellow luminescence 151
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 151
X-Ray Irradiation Effects on the Trapping Properties of Cd(1-x)ZnxTe Detectors 149
Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds 149
Yellow and green bands in GaN by resolved spectral photoconductivity 148
Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing 145
Investigation of deep level defects in CdTe thin films 145
Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC 143
Study of short-term instabilities of InGaN/GaN light-emitting diodes by means of capacitance-voltage measurements and deep-level transient spectroscopy 140
Defect characterization in GaN: Possible influence of dislocations in the yellow-band features 140
Defect states in Czochalski p-type silicon: the role of oxygen and dislocations 138
False Surface-Trap Signature Induced by Buffer Traps in AlGaN-GaN HEMT 136
Charcaterization of electrical contacts on polycrystalline 3C-SiC thin films 131
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs 128
Experimental Evidence of Dislocation Related Shallow States in p-Type Si 125
Silicon Carbide for alpha, beta, ion and soft X-ray high performance detectors 125
Interaction between oxygen and dislocations in p-type silicon 123
Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 1016 n/cm2 123
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 121
On the UV responsivity of neutron irradiated 4H-SiC 120
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels 111
Erbium in silicon: Problems and challenges 64
Investigation on electrical contacts on n-type silicon 58
Characterization of bulk and surface properties in semiconductors using non-contacting techniques 57
Surface modifications in Si after rapid thermal annealing 57
Deep energy levels in CdTe and CdZnTe 57
Cathodoluminescence and photoinduced current spectroscopy studies of defects iTe 54
Role of impurities on diffusion-induced defective states 53
Compensation and deep levels in II-VI compounds 49
Comparison of electrical and luminescence data for the A center in CdTe 48
Degradation effects at aluminum-silicon schottky diodes 47
EBIC diffusion length evaluation by the moment method 47
Surface photovoltage analysis of crystalline silicon for photovoltaic applications 46
Midgap traps related to compensation processes in CdTe alloys 45
The EL2 trap in highly doped GaAs:Te 45
Determination of minority-carrier diffusion length by integral properties of electron-beam-induced current profiles 43
Charge collection mapping of the back-transfer process in Er-doped silicon 42
Analysis of ∑=3 and ∑=9 twin boundaries in three-crystal silicon ingots 41
Junction spectroscopy of highly doped GaAs: detection of the EL2 trap 41
Scanning Kelvin probe and surface photovoltage analysis of multicrystalline silicon 40
Spatial distribution of recombination centers in GaAs:Te: Effects of the doping level 39
Characterisation of surface and near-surface regions in high-purity Cz Si 39
Determination of bulk and surface transport properties by photocurrent spectral measurements 29
Surface analyses of polycrystalline and Cz-Si wafers 28
Hydrogen-induced boron passivation in Cz Si 26
Processing effects on the electrical properties of defects in silicon 24
Surface damage in silicon substrates after the SiCl4 dry etch of a poly-Si film 24
Electrical characterization of as-grown and thermally treated 8 inches silicon wafers 24
Totale 8.457
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Categoria #
all - tutte 24.664
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 24.664
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022510 0 0 0 45 61 56 18 53 22 17 102 136
2022/2023853 103 126 50 86 43 59 17 64 118 24 113 50
2023/2024199 13 37 27 21 26 46 4 3 1 11 1 9
2024/20251.222 34 188 58 58 397 28 89 14 17 19 47 273
2025/20262.382 162 181 290 152 301 167 221 189 412 127 75 105
2026/2027548 51 105 222 170 0 0 0 0 0 0 0 0
Totale 8.457