Transport properties of semitransparent Al-Si Schottky barriers employed in electrical investigations of interface states are the subject of this article. These barriers show room temperature aging effects, which we demonstrate to be ascribed to the interaction between the conductive paste used on the metal layer for wire bonding and the Al layer. © 1998 The Electrochemical Society. All rights reserved.
Castaldini A., Cavalcoli D., Cavallini A. (1998). Degradation effects at aluminum-silicon schottky diodes. ELECTROCHEMICAL AND SOLID-STATE LETTERS, 1(2), 83-85 [10.1149/1.1390644].
Degradation effects at aluminum-silicon schottky diodes
Castaldini A.;Cavalcoli D.Secondo
;Cavallini A.
1998
Abstract
Transport properties of semitransparent Al-Si Schottky barriers employed in electrical investigations of interface states are the subject of this article. These barriers show room temperature aging effects, which we demonstrate to be ascribed to the interaction between the conductive paste used on the metal layer for wire bonding and the Al layer. © 1998 The Electrochemical Society. All rights reserved.File in questo prodotto:
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