Electronic and structural analyses of twin boundaries in a three grain crystal of Czochraiski silicon have been performed by electron beam induced current, capacitance-voltage, zero-bias resistance measurements and transmission electron microscopy investigations. Significant differences in the twin boundary elcetrical activity and inhomogeneity in their recombination activity have been observed. It is suggested that the electrical activity is controlled by the energy distribution of interface states.
Castaldini A., Cavalcoli D., Cavallini A., Martinelli G., Palmeri D., Parisini A., et al. (1996). Analysis of ∑=3 and ∑=9 twin boundaries in three-crystal silicon ingots. DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA, 47-48, 455-460.
Analysis of ∑=3 and ∑=9 twin boundaries in three-crystal silicon ingots
Castaldini A.;Cavalcoli D.;Cavallini A.;
1996
Abstract
Electronic and structural analyses of twin boundaries in a three grain crystal of Czochraiski silicon have been performed by electron beam induced current, capacitance-voltage, zero-bias resistance measurements and transmission electron microscopy investigations. Significant differences in the twin boundary elcetrical activity and inhomogeneity in their recombination activity have been observed. It is suggested that the electrical activity is controlled by the energy distribution of interface states.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
