Scanning Kelvin Probe (SKP) and Surface Photovoltage (SPV) methods have been implemented on the same stage in order to get information on surface, as well as on bulk, electronic properties of multi-crystalline Si wafers. The two probes allow for the measurements of three different parameters: the diffusion length, the majority carrier distribution and the work function differences over the whole wafer area in non-contact and non-destructive way, and no wafer preparation is required. Examples of the application of these methods for the characterization of multi-crystalline wafers for photovoltaic applications will be presented. © 2002 Elsevier Science B.V. All rights reserved.
Castaldini A., Cavalcoli D., Cavallini A., Rossi M. (2002). Scanning Kelvin probe and surface photovoltage analysis of multicrystalline silicon. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91(92), 234-238 [10.1016/S0921-5107(01)01018-2].
Scanning Kelvin probe and surface photovoltage analysis of multicrystalline silicon
Castaldini A.Investigation
;Cavalcoli D.
Writing – Original Draft Preparation
;Cavallini A.Writing – Review & Editing
;Rossi M.Investigation
2002
Abstract
Scanning Kelvin Probe (SKP) and Surface Photovoltage (SPV) methods have been implemented on the same stage in order to get information on surface, as well as on bulk, electronic properties of multi-crystalline Si wafers. The two probes allow for the measurements of three different parameters: the diffusion length, the majority carrier distribution and the work function differences over the whole wafer area in non-contact and non-destructive way, and no wafer preparation is required. Examples of the application of these methods for the characterization of multi-crystalline wafers for photovoltaic applications will be presented. © 2002 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
