Bulk, surface, and near surface regions of B doped, Cz grown, Si wafers have been characterised by electrical methods. The starting material was standard, 6″ and 8″ Cz Si wafers and high quality wafers with a low concentration of vacancy clusters [1]. The effects of chemical and thermal treatments on the electrical properties of the starting wafers have been investigated.
Castaldini A., Cavalcoli D., Cavallini A., Minarelli T., Susi E. (2002). Characterisation of surface and near-surface regions in high-purity Cz Si. DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA, 82-84, 747-752.
Characterisation of surface and near-surface regions in high-purity Cz Si
Castaldini A.;Cavalcoli D.Secondo
Investigation
;Cavallini A.;
2002
Abstract
Bulk, surface, and near surface regions of B doped, Cz grown, Si wafers have been characterised by electrical methods. The starting material was standard, 6″ and 8″ Cz Si wafers and high quality wafers with a low concentration of vacancy clusters [1]. The effects of chemical and thermal treatments on the electrical properties of the starting wafers have been investigated.File in questo prodotto:
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