The damage induced by a SiCl4 dry etching of polySi/Si and polySi/SiO2/Si structures to Si substrate surface was studied by measuring the surface recombination velocity and by relating its changes to the damage data obtained by the usual electrical characterization techniques. Different effects of the damage induced by reactive ion etching on the surface recombination velocity were detected. Lattice damage and contamination induce a light increase of the recombination activity, while changes in the morphology of the surface connected to peculiar etching patterns induce a much stronger increase. © 2001 The Electrochemical Society. All rights reserved.
Susi E., Castaldini A., Cavalcoli D., Cavallini A. (2001). Surface damage in silicon substrates after the SiCl4 dry etch of a poly-Si film. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 148(3), 150-155 [10.1149/1.1348264].
Surface damage in silicon substrates after the SiCl4 dry etch of a poly-Si film
Castaldini A.;Cavalcoli D.Penultimo
Investigation
;Cavallini A.
2001
Abstract
The damage induced by a SiCl4 dry etching of polySi/Si and polySi/SiO2/Si structures to Si substrate surface was studied by measuring the surface recombination velocity and by relating its changes to the damage data obtained by the usual electrical characterization techniques. Different effects of the damage induced by reactive ion etching on the surface recombination velocity were detected. Lattice damage and contamination induce a light increase of the recombination activity, while changes in the morphology of the surface connected to peculiar etching patterns induce a much stronger increase. © 2001 The Electrochemical Society. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
