The results of an investigation of the impact of rapid thermal annealing (RTA) at two different temperatures, 750 and 1050°C, on the electrical behavior and the morphology of a Si wafer surface are presented. A remarkable degradation of the surface and subsurface regions of Si wafers is detected after the RTA: the maximum electrical damage is observed after the 750°C anneal, while surface roughening is induced by the 1050°C anneal. Several mechanisms responsible for the observed changes in the electrical and morphological wafer characteristics are discussed.
Castaldini A., Cavalcoli D., Cavallini A., Jones D., Palermo V., Susi E. (2002). Surface modifications in Si after rapid thermal annealing. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 149(12), 633-637 [10.1149/1.1516225].
Surface modifications in Si after rapid thermal annealing
Castaldini A.;Cavalcoli D.Membro del Collaboration Group
;Cavallini A.;Palermo V.;
2002
Abstract
The results of an investigation of the impact of rapid thermal annealing (RTA) at two different temperatures, 750 and 1050°C, on the electrical behavior and the morphology of a Si wafer surface are presented. A remarkable degradation of the surface and subsurface regions of Si wafers is detected after the RTA: the maximum electrical damage is observed after the 750°C anneal, while surface roughening is induced by the 1050°C anneal. Several mechanisms responsible for the observed changes in the electrical and morphological wafer characteristics are discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
