The results of an investigation of the impact of rapid thermal annealing (RTA) at two different temperatures, 750 and 1050°C, on the electrical behavior and the morphology of a Si wafer surface are presented. A remarkable degradation of the surface and subsurface regions of Si wafers is detected after the RTA: the maximum electrical damage is observed after the 750°C anneal, while surface roughening is induced by the 1050°C anneal. Several mechanisms responsible for the observed changes in the electrical and morphological wafer characteristics are discussed.
Surface modifications in Si after rapid thermal annealing / Castaldini A.; Cavalcoli D.; Cavallini A.; Jones D.; Palermo V.; Susi E.. - In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY. - ISSN 0013-4651. - STAMPA. - 149:12(2002), pp. 633-637. [10.1149/1.1516225]
Surface modifications in Si after rapid thermal annealing
Castaldini A.;Cavalcoli D.Membro del Collaboration Group
;Cavallini A.;Palermo V.;
2002
Abstract
The results of an investigation of the impact of rapid thermal annealing (RTA) at two different temperatures, 750 and 1050°C, on the electrical behavior and the morphology of a Si wafer surface are presented. A remarkable degradation of the surface and subsurface regions of Si wafers is detected after the RTA: the maximum electrical damage is observed after the 750°C anneal, while surface roughening is induced by the 1050°C anneal. Several mechanisms responsible for the observed changes in the electrical and morphological wafer characteristics are discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
