Gate-lag transients and "hole-like" deep level transient spectroscopy signals from AlGaAs-GaAs heterostructure field-effect transistors are shown to be suppressed by illumination with photons with energy larger than the AlGaAs bandgap. The observed pulse-response dependence on light intensity is reproduced and explained by two-dimensional numerical device simulations based on hole-trap behavior of surface deep levels.

The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs / G. Verzellesi; A. Cavallini; A.F.Basile; A. Castaldini;C. Canali;. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 25:(2004), pp. 517-519. [10.1109/LED.2004.831965]

The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs

CAVALLINI, ANNA;CASTALDINI, ANTONIO;
2004

Abstract

Gate-lag transients and "hole-like" deep level transient spectroscopy signals from AlGaAs-GaAs heterostructure field-effect transistors are shown to be suppressed by illumination with photons with energy larger than the AlGaAs bandgap. The observed pulse-response dependence on light intensity is reproduced and explained by two-dimensional numerical device simulations based on hole-trap behavior of surface deep levels.
2004
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs / G. Verzellesi; A. Cavallini; A.F.Basile; A. Castaldini;C. Canali;. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - STAMPA. - 25:(2004), pp. 517-519. [10.1109/LED.2004.831965]
G. Verzellesi; A. Cavallini; A.F.Basile; A. Castaldini;C. Canali;
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/19014
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