Gate-lag transients and "hole-like" deep level transient spectroscopy signals from AlGaAs-GaAs heterostructure field-effect transistors are shown to be suppressed by illumination with photons with energy larger than the AlGaAs bandgap. The observed pulse-response dependence on light intensity is reproduced and explained by two-dimensional numerical device simulations based on hole-trap behavior of surface deep levels.
G. Verzellesi, A. Cavallini, A.F.Basile, A. Castaldini, C. Canali (2004). The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs. IEEE ELECTRON DEVICE LETTERS, 25, 517-519 [10.1109/LED.2004.831965].
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs
CAVALLINI, ANNA;CASTALDINI, ANTONIO;
2004
Abstract
Gate-lag transients and "hole-like" deep level transient spectroscopy signals from AlGaAs-GaAs heterostructure field-effect transistors are shown to be suppressed by illumination with photons with energy larger than the AlGaAs bandgap. The observed pulse-response dependence on light intensity is reproduced and explained by two-dimensional numerical device simulations based on hole-trap behavior of surface deep levels.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
