CRIS Current Research Information System

TALLARICO, ANDREA NATALE
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 2.834
EU - Europa 1.567
AS - Asia 338
AF - Africa 61
SA - Sud America 5
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 1
Totale 4.808
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 2.813
IE - Irlanda 545
IT - Italia 377
GB - Regno Unito 245
CN - Cina 149
DE - Germania 108
IN - India 63
SE - Svezia 59
FR - Francia 48
RU - Federazione Russa 41
FI - Finlandia 40
PK - Pakistan 37
TW - Taiwan 35
CI - Costa d'Avorio 27
VN - Vietnam 24
ZA - Sudafrica 21
CA - Canada 20
EE - Estonia 18
BG - Bulgaria 15
BE - Belgio 14
UA - Ucraina 12
TG - Togo 10
HK - Hong Kong 9
NL - Olanda 9
JP - Giappone 8
AT - Austria 6
CH - Svizzera 6
GR - Grecia 6
BR - Brasile 4
ES - Italia 4
PL - Polonia 4
CZ - Repubblica Ceca 3
KR - Corea 3
TR - Turchia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
NG - Nigeria 2
SK - Slovacchia (Repubblica Slovacca) 2
UZ - Uzbekistan 2
AU - Australia 1
CL - Cile 1
EG - Egitto 1
HR - Croazia 1
ID - Indonesia 1
IR - Iran 1
JO - Giordania 1
LB - Libano 1
LV - Lettonia 1
MC - Monaco 1
MX - Messico 1
RS - Serbia 1
SG - Singapore 1
SI - Slovenia 1
Totale 4.808
Salva come PNG Salva come JPEG
Città #
Ann Arbor 1.077
Dublin 545
Fairfield 259
Southend 211
Redmond 150
Ashburn 138
Wilmington 130
Woodbridge 127
Chandler 103
Bologna 97
Seattle 93
Houston 89
Leesburg 87
Princeton 64
Cambridge 61
Cesena 40
Rahim Yar Khan 31
Lappeenranta 30
Padova 30
Abidjan 27
Beijing 27
Berlin 24
Westminster 24
Nanjing 23
New York 22
Norwalk 19
Changsha 17
San Diego 17
Genova 16
Hsinchu 16
Saint Petersburg 15
Sofia 15
Falls Church 13
Redwood City 13
Fremont 12
Jinan 12
Medford 12
Milan 12
Des Moines 10
Helsinki 10
Levanto 10
Lomé 10
Forlì 9
Nanchang 9
Brussels 8
Duncan 8
Formigine 8
Boardman 7
Guangzhou 7
Shenyang 7
Victoria 7
Chang-hua 6
Florence 6
Hebei 6
Lahore 6
Tokyo 6
Zhengzhou 6
Dearborn 5
Kanata 5
London 5
Marseille 5
Munich 5
Phoenix 5
San Francisco 5
Vallefoglia 5
Washington 5
Bagnacavallo 4
Faenza 4
Modena 4
Olalla 4
Ottaviano 4
Sankt Veit an der Glan 4
Viserba 4
Baricella 3
Bühl 3
Cesenatico 3
Chicago 3
Jiaxing 3
New Taipei 3
Nürnberg 3
Ottawa 3
Paris 3
Ravenna 3
Rimini 3
San Jose 3
Shatin 3
Tianjin 3
Turin 3
Amsterdam 2
Ancona 2
Barcelona 2
Bratislava 2
Busalla 2
Caldicot 2
Casalecchio di Reno 2
Castel Maggiore 2
Chiavari 2
Chiswick 2
Dallas 2
Edinburgh 2
Totale 3.986
Salva come PNG Salva come JPEG
Nome #
Impact of structural and process variations on the time-dependent off-state breakdown of p-gan power hemts 447
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide 215
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs 211
TCAD investigation on hot-electron injection in new-generation technologies 202
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation 201
Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation 194
Characterization and Modeling of BTI in SiC MOSFETs 177
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture 173
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors 173
Gate Reliability of p-GaN HEMT with Gate Metal Retraction 163
An integrated DC/DC converter with online monitoring of hot-carrier degradation 157
null 147
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors 141
ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence 140
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration 136
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs 133
Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes with Gated Edge Termination 130
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode 129
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 128
TCAD predictions of hot-electron injection in p-type LDMOS transistors 124
Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests 123
Negative Bias Temperature Stress Reliability in Trench-Gated P-Channel Power MOSFETs 122
Modeling Spatial and Energy Oxide Trap Distribution Responsible for NBTI in p-Channel Power U-MOSFETs 121
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level 119
NBTI in p-channel power U-MOSFETs: Understanding the degradation and the recovery mechanisms2014 15th International Conference on Ultimate Integration on Silicon (ULIS) 118
Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence 117
Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs 114
Reliability of Au-free AlGaN/GaN-on-silicon Schottky barrier diodes under ON-state stress 105
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate 101
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs 101
Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation 78
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition 38
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter 36
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs 35
PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on ΔVTH and Underlying Degradation Mechanisms 34
Impact of the substrate orientation on CHC reliability in n-FinFETs - Separation of the various contributions 29
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current 18
Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress 10
In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs 6
Role of interface/border traps on the threshold voltage instability of SiC power transistors 6
SiC MOSFETs performance modeling in Simulink Simscape environment 6
Totale 4.958
Salva come PNG Salva come JPEG
Categoria #
all - tutte 10.492
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10.492
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201939 0 0 0 0 0 0 0 0 0 0 19 20
2019/2020797 77 18 3 33 105 77 112 125 109 75 27 36
2020/2021515 66 39 11 7 8 74 30 32 45 63 57 83
2021/20221.806 79 45 265 160 219 167 215 166 198 67 113 112
2022/2023841 73 86 53 104 47 54 66 68 137 20 66 67
2023/2024642 48 113 73 70 91 91 26 26 16 72 16 0
Totale 4.958