CRIS Current Research Information System

TALLARICO, ANDREA NATALE
 Distribuzione geografica
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Continente #
NA - Nord America 3.655
AS - Asia 2.584
EU - Europa 2.311
SA - Sud America 131
AF - Africa 116
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
Totale 8.801
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Nazione #
US - Stati Uniti d'America 3.614
CN - Cina 771
SG - Singapore 722
IT - Italia 629
IE - Irlanda 545
VN - Vietnam 459
GB - Regno Unito 268
DE - Germania 206
RU - Federazione Russa 155
HK - Hong Kong 142
IN - India 124
FR - Francia 114
KR - Corea 106
BR - Brasile 92
NL - Olanda 83
FI - Finlandia 80
SE - Svezia 65
JP - Giappone 64
TW - Taiwan 55
PK - Pakistan 46
CI - Costa d'Avorio 39
CA - Canada 33
ZA - Sudafrica 26
AT - Austria 23
AR - Argentina 22
BE - Belgio 19
EE - Estonia 18
ID - Indonesia 18
SC - Seychelles 18
UA - Ucraina 16
BG - Bulgaria 15
ES - Italia 15
PL - Polonia 12
GR - Grecia 11
PH - Filippine 11
TG - Togo 11
BD - Bangladesh 10
CH - Svizzera 10
IQ - Iraq 10
TR - Turchia 9
MY - Malesia 7
LT - Lituania 6
CL - Cile 5
CZ - Repubblica Ceca 5
ET - Etiopia 5
SA - Arabia Saudita 5
TH - Thailandia 5
UZ - Uzbekistan 5
CO - Colombia 4
DZ - Algeria 4
MX - Messico 4
EC - Ecuador 3
EG - Egitto 3
SY - Repubblica araba siriana 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AL - Albania 2
AU - Australia 2
CY - Cipro 2
DO - Repubblica Dominicana 2
JO - Giordania 2
KZ - Kazakistan 2
LV - Lettonia 2
NG - Nigeria 2
NP - Nepal 2
SK - Slovacchia (Repubblica Slovacca) 2
TN - Tunisia 2
UY - Uruguay 2
AO - Angola 1
BA - Bosnia-Erzegovina 1
BW - Botswana 1
BY - Bielorussia 1
CR - Costa Rica 1
CV - Capo Verde 1
GT - Guatemala 1
HR - Croazia 1
HU - Ungheria 1
IL - Israele 1
IR - Iran 1
KE - Kenya 1
KG - Kirghizistan 1
LB - Libano 1
LU - Lussemburgo 1
MC - Monaco 1
MD - Moldavia 1
MW - Malawi 1
PY - Paraguay 1
RO - Romania 1
RS - Serbia 1
SI - Slovenia 1
SN - Senegal 1
SR - Suriname 1
VE - Venezuela 1
Totale 8.801
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Città #
Ann Arbor 1.077
Dublin 545
Singapore 507
Fairfield 259
Ashburn 232
Southend 211
Bologna 183
Santa Clara 180
Hefei 175
Redmond 150
San Jose 132
Wilmington 131
Hong Kong 127
Woodbridge 127
Ho Chi Minh City 126
Chandler 103
Seattle 95
Houston 92
Seoul 91
Hanoi 89
Leesburg 88
Beijing 74
Cesena 68
Princeton 64
Cambridge 61
Milan 55
Boardman 53
Tokyo 51
Frankfurt am Main 50
Lauterbourg 43
Los Angeles 43
Abidjan 39
Lappeenranta 39
New York 38
Rahim Yar Khan 31
Padova 30
Nanjing 29
Helsinki 26
Berlin 25
Hsinchu 24
Westminster 24
Munich 23
Council Bluffs 22
Changsha 21
Redondo Beach 21
Dallas 20
Guangzhou 20
Eindhoven 19
Norwalk 19
Haiphong 17
Hyderabad 17
London 17
San Diego 17
Chicago 16
Genova 16
Bengaluru 15
Buffalo 15
Saint Petersburg 15
Sofia 15
Amsterdam 14
Shanghai 14
São Paulo 14
Da Nang 13
Falls Church 13
Forlì 13
Jinan 13
Redwood City 13
Rimini 13
Turku 13
Fremont 12
Jakarta 12
Medford 12
Nuremberg 12
Brussels 11
Des Moines 11
Lomé 11
Salt Lake City 11
Tianjin 11
Vienna 11
Can Tho 10
Falkenstein 10
Levanto 10
Nanchang 10
Orem 10
Shenyang 10
Hangzhou 9
La Puente 9
Shenzhen 9
Taipei 9
Xi'an 9
Zhengzhou 9
Duncan 8
Formigine 8
Turin 8
Biên Hòa 7
Florence 7
Lahore 7
Phoenix 7
Victoria 7
Washington 7
Totale 6.339
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Nome #
Impact of structural and process variations on the time-dependent off-state breakdown of p-gan power hemts 512
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation 320
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs 300
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide 283
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors 278
TCAD investigation on hot-electron injection in new-generation technologies 274
Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation 273
Characterization and Modeling of BTI in SiC MOSFETs 270
An integrated DC/DC converter with online monitoring of hot-carrier degradation 259
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter 248
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture 243
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors 231
Gate Reliability of p-GaN HEMT with Gate Metal Retraction 225
Positive Bias Temperature Instability in SiC-Based Power MOSFETs 213
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs 190
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs 189
ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence 188
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 187
TCAD predictions of hot-electron injection in p-type LDMOS transistors 187
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current 182
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition 182
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode 182
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration 182
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs 181
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate 179
P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime 178
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate 178
NBTI in p-channel power U-MOSFETs: Understanding the degradation and the recovery mechanisms2014 15th International Conference on Ultimate Integration on Silicon (ULIS) 175
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level 173
Negative Bias Temperature Stress Reliability in Trench-Gated P-Channel Power MOSFETs 172
Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes with Gated Edge Termination 172
Reliability of Au-free AlGaN/GaN-on-silicon Schottky barrier diodes under ON-state stress 170
Modeling Spatial and Energy Oxide Trap Distribution Responsible for NBTI in p-Channel Power U-MOSFETs 168
Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests 168
Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs 162
Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence 160
null 147
In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs 145
Role of interface/border traps on the threshold voltage instability of SiC power transistors 138
Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation 136
PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on ΔVTH and Underlying Degradation Mechanisms 128
SiC MOSFETs performance modeling in Simulink Simscape environment 110
Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress 110
Thermal Modeling of SiC Power Module: A CFD-Based Approach for Junction-to-Fluid Resistance Estimate 75
Impact of the substrate orientation on CHC reliability in n-FinFETs - Separation of the various contributions 66
RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature 41
HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate Stack 37
Reliability Assessment of 650-V Schottky p-GaN HEMTs Under Reverse Conduction Stress 30
Totale 8.997
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Categoria #
all - tutte 21.323
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 21.323
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021203 0 0 0 0 0 0 0 0 0 63 57 83
2021/20221.806 79 45 265 160 219 167 215 166 198 67 113 112
2022/2023841 73 86 53 104 47 54 66 68 137 20 66 67
2023/2024668 48 113 73 70 91 91 26 26 16 72 18 24
2024/20251.482 76 139 104 148 272 43 142 59 54 100 126 219
2025/20262.531 211 278 281 211 278 156 270 104 563 179 0 0
Totale 8.997