CRIS Current Research Information System

TALLARICO, ANDREA NATALE
 Distribuzione geografica
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Continente #
NA - Nord America 3.800
AS - Asia 2.654
EU - Europa 2.389
SA - Sud America 132
AF - Africa 117
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
Totale 9.096
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Nazione #
US - Stati Uniti d'America 3.749
CN - Cina 783
SG - Singapore 728
IT - Italia 690
IE - Irlanda 545
VN - Vietnam 459
GB - Regno Unito 271
DE - Germania 210
RU - Federazione Russa 156
HK - Hong Kong 149
IN - India 138
FR - Francia 118
KR - Corea 109
BR - Brasile 92
NL - Olanda 87
FI - Finlandia 80
JP - Giappone 66
SE - Svezia 65
TW - Taiwan 57
PK - Pakistan 46
CA - Canada 40
CI - Costa d'Avorio 39
BD - Bangladesh 34
ZA - Sudafrica 27
AR - Argentina 23
AT - Austria 23
BE - Belgio 19
EE - Estonia 18
ID - Indonesia 18
SC - Seychelles 18
UA - Ucraina 16
BG - Bulgaria 15
ES - Italia 15
PL - Polonia 12
CH - Svizzera 11
GR - Grecia 11
PH - Filippine 11
TG - Togo 11
IQ - Iraq 10
TR - Turchia 9
MY - Malesia 7
LT - Lituania 6
CL - Cile 5
CZ - Repubblica Ceca 5
ET - Etiopia 5
SA - Arabia Saudita 5
TH - Thailandia 5
UZ - Uzbekistan 5
CO - Colombia 4
DZ - Algeria 4
MX - Messico 4
CR - Costa Rica 3
EC - Ecuador 3
EG - Egitto 3
SY - Repubblica araba siriana 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AL - Albania 2
AU - Australia 2
CY - Cipro 2
DO - Repubblica Dominicana 2
JO - Giordania 2
KZ - Kazakistan 2
LV - Lettonia 2
NG - Nigeria 2
NP - Nepal 2
SK - Slovacchia (Repubblica Slovacca) 2
TN - Tunisia 2
UY - Uruguay 2
AO - Angola 1
BA - Bosnia-Erzegovina 1
BW - Botswana 1
BY - Bielorussia 1
CV - Capo Verde 1
GT - Guatemala 1
HR - Croazia 1
HU - Ungheria 1
IL - Israele 1
IR - Iran 1
JM - Giamaica 1
KE - Kenya 1
KG - Kirghizistan 1
LB - Libano 1
LU - Lussemburgo 1
MC - Monaco 1
MD - Moldavia 1
MW - Malawi 1
PY - Paraguay 1
RO - Romania 1
RS - Serbia 1
SI - Slovenia 1
SN - Senegal 1
SR - Suriname 1
VE - Venezuela 1
Totale 9.096
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Città #
Ann Arbor 1.077
Dublin 545
Singapore 512
Fairfield 259
Ashburn 241
Southend 211
Bologna 195
Santa Clara 186
Hefei 175
San Jose 156
Redmond 150
Hong Kong 134
Wilmington 131
Woodbridge 127
Ho Chi Minh City 126
Chandler 103
Seattle 95
Houston 93
Seoul 91
Hanoi 89
Leesburg 88
Beijing 79
Boardman 69
Cesena 68
Princeton 64
Cambridge 61
Milan 61
Frankfurt am Main 52
Tokyo 51
Los Angeles 49
Lauterbourg 43
New York 43
Abidjan 39
Lappeenranta 39
Council Bluffs 31
Rahim Yar Khan 31
Nanjing 30
Padova 30
Rimini 30
Bengaluru 27
Berlin 26
Helsinki 26
Munich 25
Hsinchu 24
Westminster 24
Dallas 23
Changsha 21
Redondo Beach 21
Guangzhou 20
Eindhoven 19
Norwalk 19
Amsterdam 17
Buffalo 17
Chicago 17
Haiphong 17
Hyderabad 17
London 17
San Diego 17
Genova 16
Saint Petersburg 15
Sofia 15
Shanghai 14
São Paulo 14
Da Nang 13
Falls Church 13
Forlì 13
Jinan 13
Naples 13
Redwood City 13
Turku 13
Fremont 12
Jakarta 12
Medford 12
Nuremberg 12
Orem 12
Brussels 11
Des Moines 11
Lomé 11
Phoenix 11
Rome 11
Salt Lake City 11
Tianjin 11
Vienna 11
Can Tho 10
Falkenstein 10
Levanto 10
Nanchang 10
Shenyang 10
Hangzhou 9
La Puente 9
Paris 9
Shenzhen 9
Taipei 9
Xi'an 9
Zhengzhou 9
Duncan 8
Formigine 8
Turin 8
Biên Hòa 7
Florence 7
Totale 6.512
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Nome #
Impact of structural and process variations on the time-dependent off-state breakdown of p-gan power hemts 512
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation 324
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs 305
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors 299
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide 286
TCAD investigation on hot-electron injection in new-generation technologies 278
Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation 277
Characterization and Modeling of BTI in SiC MOSFETs 271
An integrated DC/DC converter with online monitoring of hot-carrier degradation 264
A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converter 259
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture 243
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors 236
Gate Reliability of p-GaN HEMT with Gate Metal Retraction 226
Positive Bias Temperature Instability in SiC-Based Power MOSFETs 221
GaN HEMT with p-Type Schottky Gate: A Case Study of TCAD Modeling of the Gate Leakage Current 212
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs 199
P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime 196
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs 194
ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence 192
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 189
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode 188
TCAD predictions of hot-electron injection in p-type LDMOS transistors 188
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition 187
Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate 185
Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs 184
Failure mode for p-GaN gates under forward gate stress with varying Mg concentration 184
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate 181
Negative Bias Temperature Stress Reliability in Trench-Gated P-Channel Power MOSFETs 179
NBTI in p-channel power U-MOSFETs: Understanding the degradation and the recovery mechanisms2014 15th International Conference on Ultimate Integration on Silicon (ULIS) 177
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level 173
Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes with Gated Edge Termination 172
Reliability of Au-free AlGaN/GaN-on-silicon Schottky barrier diodes under ON-state stress 171
Modeling Spatial and Energy Oxide Trap Distribution Responsible for NBTI in p-Channel Power U-MOSFETs 170
Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs 170
Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests 168
Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence 162
In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs 151
null 147
PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on ΔVTH and Underlying Degradation Mechanisms 145
Role of interface/border traps on the threshold voltage instability of SiC power transistors 143
Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation 138
SiC MOSFETs performance modeling in Simulink Simscape environment 119
Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress 118
Thermal Modeling of SiC Power Module: A CFD-Based Approach for Junction-to-Fluid Resistance Estimate 80
HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate Stack 68
Impact of the substrate orientation on CHC reliability in n-FinFETs - Separation of the various contributions 67
RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature 51
Reliability Assessment of 650-V Schottky p-GaN HEMTs Under Reverse Conduction Stress 43
Totale 9.292
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Categoria #
all - tutte 22.840
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 22.840
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202183 0 0 0 0 0 0 0 0 0 0 0 83
2021/20221.806 79 45 265 160 219 167 215 166 198 67 113 112
2022/2023841 73 86 53 104 47 54 66 68 137 20 66 67
2023/2024668 48 113 73 70 91 91 26 26 16 72 18 24
2024/20251.482 76 139 104 148 272 43 142 59 54 100 126 219
2025/20262.826 211 278 281 211 278 156 270 104 563 221 126 127
Totale 9.292