In this paper, we present a combined measurement/simulation method, implemented in order to estimate the spatial and energy oxide trap distribution induced by negative bias temperature instability (NBTI) stress in p-channel power U-MOSFETs. The methodology consists in analyzing the recovery phase at different bias conditions and correlating the results with TCAD numerical simulations. We found an oxide trap distribution positioned between 2.24 and 3.04 nm distant from oxide/channel interface with an energy level confined in the silicon bandgap.
Modeling Spatial and Energy Oxide Trap Distribution Responsible for NBTI in p-Channel Power U-MOSFETs / Andrea Natale Tallarico; Paolo Magnone; Giacomo Barletta; Angelo Magrì; Enrico Sangiorgi; Claudio Fiegna. - STAMPA. - (2015), pp. 7123412.153-7123412.156. (Intervento presentato al convegno 27th IEEE International Symposium on Power Semiconductor Devices and IC's tenutosi a Hong Kong, China nel 10-14 May 2015) [10.1109/ISPSD.2015.7123412].
Modeling Spatial and Energy Oxide Trap Distribution Responsible for NBTI in p-Channel Power U-MOSFETs
TALLARICO, ANDREA NATALE;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2015
Abstract
In this paper, we present a combined measurement/simulation method, implemented in order to estimate the spatial and energy oxide trap distribution induced by negative bias temperature instability (NBTI) stress in p-channel power U-MOSFETs. The methodology consists in analyzing the recovery phase at different bias conditions and correlating the results with TCAD numerical simulations. We found an oxide trap distribution positioned between 2.24 and 3.04 nm distant from oxide/channel interface with an energy level confined in the silicon bandgap.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
