CRIS Current Research Information System

TALLARICO, ANDREA NATALE
 Distribuzione geografica
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Continente #
EU - Europa 892
NA - Nord America 772
AS - Asia 743
AF - Africa 6
SA - Sud America 5
OC - Oceania 1
Totale 2.419
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Nazione #
US - Stati Uniti d'America 748
IT - Italia 260
IE - Irlanda 252
CN - Cina 204
TW - Taiwan 171
DE - Germania 112
JP - Giappone 92
FR - Francia 79
IN - India 72
KR - Corea 53
BE - Belgio 51
HK - Hong Kong 51
SG - Singapore 45
GB - Regno Unito 37
CA - Canada 23
IL - Israele 23
NL - Olanda 20
AT - Austria 15
CZ - Repubblica Ceca 12
RU - Federazione Russa 9
ES - Italia 7
FI - Finlandia 7
CH - Svizzera 6
SA - Arabia Saudita 6
UA - Ucraina 6
VN - Vietnam 6
GR - Grecia 5
IR - Iran 4
PK - Pakistan 4
RO - Romania 4
BD - Bangladesh 3
TR - Turchia 3
AR - Argentina 2
DZ - Algeria 2
MY - Malesia 2
PL - Polonia 2
SE - Svezia 2
SK - Slovacchia (Repubblica Slovacca) 2
UZ - Uzbekistan 2
ZA - Sudafrica 2
AE - Emirati Arabi Uniti 1
AU - Australia 1
BG - Bulgaria 1
BR - Brasile 1
BY - Bielorussia 1
CL - Cile 1
EG - Egitto 1
HN - Honduras 1
LU - Lussemburgo 1
PS - Palestinian Territory 1
RS - Serbia 1
TG - Togo 1
VE - Venezuela 1
Totale 2.419
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Città #
Dublin 247
Bologna 97
Taipei 62
Ashburn 52
Munich 48
Houston 43
Fairfield 38
Ann Arbor 36
Tokyo 35
San Jose 30
Shanghai 30
Duncan 29
Santa Cruz 28
Hsinchu 26
Boardman 22
Seattle 21
Cesena 20
Woodbridge 20
Brussels 17
Buffalo 17
Council Bluffs 16
Milan 16
Singapore 16
Shenzhen 15
Beijing 14
Chengdu 14
Chicago 14
Hong Kong 14
Frankfurt am Main 13
Hangzhou 13
Guangzhou 12
Wilmington 12
Central 11
Dresden 11
Los Angeles 11
Marseille 10
Mumbai 10
New York 10
Redmond 10
Clifton Park 9
Grenoble 9
Kolkata 9
Taoyuan District 9
Bengaluru 8
Cambridge 8
Changsha 8
Kaohsiung City 8
Sacramento 8
San Diego 8
Seoul 8
Lafayette 7
New Taipei 7
Paris 7
Wilrijk 7
Forlì 6
Guiyang 6
Hebei 6
Herent 6
Miaoli 6
Santa Clara 6
Villach 6
Yokohama 6
Zhubei 6
At Tuwal 5
Catania 5
Cheongju-si 5
Delhi 5
Fremont 5
Lake Forest 5
Las Vegas 5
Mid Levels 5
Norwalk 5
Ottawa 5
Plano 5
Southend 5
Wuhan 5
Chandler 4
Dimapur 4
Ferrara 4
Helsinki 4
Heverlee 4
Jerusalem 4
Kobe 4
London 4
Ningbo 4
Nove Mesto na Morave 4
Osaka 4
Parma 4
Phoenix 4
Sant Andreu 4
Seto 4
Taichung 4
Toronto 4
Tours 4
West Lafayette 4
Arzignano 3
Austin 3
Boulder 3
Columbia 3
Cork 3
Totale 1.490
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Nome #
Hot-Carrier Degradation in Power LDMOS: Selective LOCOS-Versus STI-Based Architecture, file e1dcb330-aad6-7715-e053-1705fe0a6cc9 551
Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation, file e1dcb338-aa44-7715-e053-1705fe0a6cc9 418
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide, file e1dcb331-9a45-7715-e053-1705fe0a6cc9 268
Impact of structural and process variations on the time-dependent off-state breakdown of p-gan power hemts, file e1dcb338-3586-7715-e053-1705fe0a6cc9 264
An integrated DC/DC converter with online monitoring of hot-carrier degradation, file e1dcb335-3f3a-7715-e053-1705fe0a6cc9 150
TCAD investigation on hot-electron injection in new-generation technologies, file e1dcb331-fb67-7715-e053-1705fe0a6cc9 139
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation, file e1dcb332-d155-7715-e053-1705fe0a6cc9 130
Characterization and Modeling of BTI in SiC MOSFETs, file e1dcb337-7bf6-7715-e053-1705fe0a6cc9 107
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors, file e1dcb337-d4e9-7715-e053-1705fe0a6cc9 91
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs, file e1dcb339-030c-7715-e053-1705fe0a6cc9 91
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors, file 38bbf57c-d22a-4e91-937f-0953a53a96dd 39
High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs, file e1dcb338-4ef7-7715-e053-1705fe0a6cc9 37
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide, file e1dcb332-c824-7715-e053-1705fe0a6cc9 33
TCAD investigation on hot-electron injection in new-generation technologies, file e1dcb332-7933-7715-e053-1705fe0a6cc9 28
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide, file e1dcb330-00fd-7715-e053-1705fe0a6cc9 25
Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation, file e1dcb338-6527-7715-e053-1705fe0a6cc9 20
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs, file 747ce7ac-fc7b-48ff-b40e-12f9610a077c 16
Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs, file e1dcb32c-ce27-7715-e053-1705fe0a6cc9 10
Characterization and Modeling of BTI in SiC MOSFETs, file e1dcb333-daf0-7715-e053-1705fe0a6cc9 8
TCAD predictions of hot-electron injection in p-type LDMOS transistors, file e1dcb334-6045-7715-e053-1705fe0a6cc9 8
Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode, file e1dcb32c-d489-7715-e053-1705fe0a6cc9 7
Negative Bias Temperature Stress Reliability in Trench-Gated P-Channel Power MOSFETs, file e1dcb32c-59af-7715-e053-1705fe0a6cc9 6
Modeling Spatial and Energy Oxide Trap Distribution Responsible for NBTI in p-Channel Power U-MOSFETs, file e1dcb32c-ce2a-7715-e053-1705fe0a6cc9 6
Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate, file 36860200-8e55-49a5-a002-510d9b5d0ae1 5
Role of the GaN-on-Si Epi-Stack on Δ RONCaused by Back-Gating Stress, file 2d3659d7-b0cb-4bb2-9cfa-902bfc3352ae 4
In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs, file a7cd0a4c-bfae-41b4-99e6-d4ce9bf7b33f 4
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition, file 652dfab1-630a-4734-aded-9885d0651c33 3
null, file e1dcb330-989a-7715-e053-1705fe0a6cc9 3
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation, file e1dcb332-37d3-7715-e053-1705fe0a6cc9 3
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs, file f9f7562a-3458-4a8e-b105-fc15096d112c 3
Gate Reliability of p-GaN HEMT with Gate Metal Retraction, file e1dcb333-7103-7715-e053-1705fe0a6cc9 2
Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS Transistors, file e1dcb336-9f4b-7715-e053-1705fe0a6cc9 2
Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation, file e1dcb338-3bf8-7715-e053-1705fe0a6cc9 2
Role of interface/border traps on the threshold voltage instability of SiC power transistors, file 132941ad-36ce-46ef-965b-fec037110b7f 1
Role of interface/border traps on the threshold voltage instability of SiC power transistors, file 1db51c70-7129-4ed8-8107-7fbd3c07055f 1
SiC MOSFETs performance modeling in Simulink Simscape environment, file 236657ce-9bf4-43a3-8a73-2a16d54e8c77 1
SiC MOSFETs performance modeling in Simulink Simscape environment, file 96fe389a-2271-46c0-930c-6e5615659643 1
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability, file e1dcb333-9543-7715-e053-1705fe0a6cc9 1
Gate Reliability of p-GaN HEMT with Gate Metal Retraction, file e1dcb333-9545-7715-e053-1705fe0a6cc9 1
Threshold Voltage Instability in GaN HEMTs with p-Type Gate: Mg Doping Compensation, file e1dcb333-954b-7715-e053-1705fe0a6cc9 1
TCAD Modeling of the Dynamic VTH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs, file e1dcb338-c688-7715-e053-1705fe0a6cc9 1
Totale 2.491
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Categoria #
all - tutte 4.675
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.675
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20196 0 0 0 0 0 0 0 0 0 0 4 2
2019/2020140 2 1 3 7 9 12 17 16 21 26 13 13
2020/2021321 14 18 25 23 29 39 31 26 19 46 26 25
2021/2022608 26 45 56 89 77 27 33 44 63 32 69 47
2022/2023597 42 31 53 49 55 43 25 44 46 33 97 79
2023/2024756 62 71 86 101 88 94 97 90 40 15 12 0
Totale 2.491