In this paper, we report an analysis of the degradation induced by ON-state stress in Au-free AlGaN/GaN-on-Si Schottky barrier diodes (SBDs). When the device operates in ON-state mode, the combined effect of large currents and moderate electric fields may cause a shift of the turn-on voltage (VTON) and ON-resistance (RON) because of the charge carrier trapping/de-trapping, occurring in different regions and related to different types of defects. In particular, the influence of the anode-cathode spacing length on the ON-state degradation has been investigated and the degradation sources, attributable to ΔVTON and ΔRON, have been understood. Moreover, thanks to this approach, a critical electric field for the RON degradation has been reported.
Tallarico, A.N., Magnone, P., Stoffels, S., Lenci, S., Hu, J., Marcon, D., et al. (2016). Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence. Institute of Electrical and Electronics Engineers Inc. [10.1109/IRPS.2016.7574530].
Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence
TALLARICO, ANDREA NATALE;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2016
Abstract
In this paper, we report an analysis of the degradation induced by ON-state stress in Au-free AlGaN/GaN-on-Si Schottky barrier diodes (SBDs). When the device operates in ON-state mode, the combined effect of large currents and moderate electric fields may cause a shift of the turn-on voltage (VTON) and ON-resistance (RON) because of the charge carrier trapping/de-trapping, occurring in different regions and related to different types of defects. In particular, the influence of the anode-cathode spacing length on the ON-state degradation has been investigated and the degradation sources, attributable to ΔVTON and ΔRON, have been understood. Moreover, thanks to this approach, a critical electric field for the RON degradation has been reported.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
