In this paper, we report an analysis of the degradation induced by ON-state stress in Au-free AlGaN/GaN-on-Si Schottky barrier diodes (SBDs). When the device operates in ON-state mode, the combined effect of large currents and moderate electric fields may cause a shift of the turn-on voltage (VTON) and ON-resistance (RON) because of the charge carrier trapping/de-trapping, occurring in different regions and related to different types of defects. In particular, the influence of the anode-cathode spacing length on the ON-state degradation has been investigated and the degradation sources, attributable to ΔVTON and ΔRON, have been understood. Moreover, thanks to this approach, a critical electric field for the RON degradation has been reported.
Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence / Tallarico, Andrea Natale; Magnone, Paolo; Stoffels, Steve; Lenci, Silvia; Hu, Jie; Marcon, Denis; Sangiorgi, Enrico; Decoutere, Stefaan; Fiegna, Claudio. - ELETTRONICO. - (2016), pp. 7574530.4A51-7574530.4A56. (Intervento presentato al convegno 2016 International Reliability Physics Symposium, IRPS 2016 tenutosi a Pasadena, USA nel April, 2016) [10.1109/IRPS.2016.7574530].
Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence
TALLARICO, ANDREA NATALE;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2016
Abstract
In this paper, we report an analysis of the degradation induced by ON-state stress in Au-free AlGaN/GaN-on-Si Schottky barrier diodes (SBDs). When the device operates in ON-state mode, the combined effect of large currents and moderate electric fields may cause a shift of the turn-on voltage (VTON) and ON-resistance (RON) because of the charge carrier trapping/de-trapping, occurring in different regions and related to different types of defects. In particular, the influence of the anode-cathode spacing length on the ON-state degradation has been investigated and the degradation sources, attributable to ΔVTON and ΔRON, have been understood. Moreover, thanks to this approach, a critical electric field for the RON degradation has been reported.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
