In this paper, we present an analysis of the degradation mechanisms in p-channel power U-MOSFETs due to Negative Bias Temperature Instability (NBTI). In particular, we study the influence of NBTI on threshold voltage and trans-conductance, which are the main figures of merit affected by charges trapping in the bulk oxide and by an interface defects generation. At the end of the stress, a recovery phase is implemented in order to monitor permanent and recoverable degradation. Moreover, we investigate the influence of the overall channel area on the threshold voltage degradation and on device lifetime.
Andrea Natale Tallarico, Paolo Magnone, Giacomo Barletta, Angelo Magri, Enrico Sangiorgi, Claudio Fiegna (2014). NBTI in p-channel power U-MOSFETs: Understanding the degradation and the recovery mechanisms2014 15th International Conference on Ultimate Integration on Silicon (ULIS). IEEE Computer Society [10.1109/ULIS.2014.6813919].
NBTI in p-channel power U-MOSFETs: Understanding the degradation and the recovery mechanisms2014 15th International Conference on Ultimate Integration on Silicon (ULIS)
TALLARICO, ANDREA NATALE;MAGNONE, PAOLO;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2014
Abstract
In this paper, we present an analysis of the degradation mechanisms in p-channel power U-MOSFETs due to Negative Bias Temperature Instability (NBTI). In particular, we study the influence of NBTI on threshold voltage and trans-conductance, which are the main figures of merit affected by charges trapping in the bulk oxide and by an interface defects generation. At the end of the stress, a recovery phase is implemented in order to monitor permanent and recoverable degradation. Moreover, we investigate the influence of the overall channel area on the threshold voltage degradation and on device lifetime.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
