PICCININI, ENRICO
 Distribuzione geografica
Continente #
NA - Nord America 3.895
AS - Asia 2.408
EU - Europa 1.909
AF - Africa 174
SA - Sud America 138
OC - Oceania 2
Continente sconosciuto - Info sul continente non disponibili 1
Totale 8.527
Nazione #
US - Stati Uniti d'America 3.864
SG - Singapore 705
CN - Cina 644
VN - Vietnam 611
GB - Regno Unito 574
DE - Germania 291
IT - Italia 214
FR - Francia 167
IN - India 156
UA - Ucraina 150
HK - Hong Kong 134
SE - Svezia 124
RU - Federazione Russa 121
BR - Brasile 97
IE - Irlanda 93
TG - Togo 75
EE - Estonia 58
ZA - Sudafrica 54
NL - Olanda 46
JP - Giappone 44
BG - Bulgaria 24
KR - Corea 24
AR - Argentina 20
CA - Canada 17
SC - Seychelles 15
BE - Belgio 14
TH - Thailandia 12
BD - Bangladesh 11
PH - Filippine 11
IQ - Iraq 10
EC - Ecuador 7
MX - Messico 7
NG - Nigeria 7
PK - Pakistan 7
PL - Polonia 7
SA - Arabia Saudita 7
CI - Costa d'Avorio 6
TW - Taiwan 6
CH - Svizzera 5
FI - Finlandia 5
TR - Turchia 5
ES - Italia 4
GR - Grecia 4
MA - Marocco 4
TN - Tunisia 4
EG - Egitto 3
IR - Iran 3
LB - Libano 3
PY - Paraguay 3
UY - Uruguay 3
UZ - Uzbekistan 3
VE - Venezuela 3
AT - Austria 2
CL - Cile 2
ET - Etiopia 2
ID - Indonesia 2
IL - Israele 2
JM - Giamaica 2
JO - Giordania 2
KE - Kenya 2
NO - Norvegia 2
PE - Perù 2
TT - Trinidad e Tobago 2
AE - Emirati Arabi Uniti 1
CR - Costa Rica 1
CY - Cipro 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
GH - Ghana 1
GY - Guiana 1
KH - Cambogia 1
KZ - Kazakistan 1
LT - Lituania 1
LV - Lettonia 1
MD - Moldavia 1
MY - Malesia 1
NC - Nuova Caledonia 1
NZ - Nuova Zelanda 1
PA - Panama 1
PS - Palestinian Territory 1
RS - Serbia 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 8.527
Città #
Southend 499
Singapore 490
Ashburn 460
Fairfield 451
San Jose 243
Woodbridge 237
Santa Clara 229
Seattle 227
Wilmington 208
Houston 197
Chandler 181
Ann Arbor 166
Cambridge 159
Hong Kong 127
Princeton 123
Ho Chi Minh City 119
Jacksonville 98
Hanoi 95
Beijing 93
Dublin 93
Lomé 75
Dong Ket 72
Boardman 70
Westminster 59
Hefei 58
Lauterbourg 58
Nanjing 56
Padova 56
Frankfurt am Main 51
Turin 38
Berlin 37
Council Bluffs 36
Tokyo 36
Los Angeles 34
Saint Petersburg 33
Shenyang 31
Medford 29
San Diego 29
Jinan 27
Hyderabad 26
Dallas 25
Mülheim 25
Nanchang 24
Redondo Beach 24
Sofia 23
Hebei 22
Buffalo 21
Changsha 20
Bologna 19
Milan 19
Washington 18
Seoul 17
Dearborn 15
Shanghai 15
Mahé 14
Hangzhou 13
Orem 13
Da Nang 12
Tianjin 12
Guangzhou 11
Haiphong 11
New York 11
Yubileyny 11
Brussels 10
Jiaxing 10
Norwalk 10
Bangkok 9
Kunming 9
San Francisco 9
Des Moines 8
Falls Church 8
Modena 8
Phoenix 8
São Paulo 8
Wuhan 8
Montreal 7
Ningbo 7
Shenzhen 7
Taizhou 7
Zhengzhou 7
Abeokuta 6
Abidjan 6
Biên Hòa 6
Bremen 6
Rio de Janeiro 6
The Dalles 6
Can Tho 5
Denver 5
Helsinki 5
London 5
Redmond 5
Verona 5
Amsterdam 4
Atlanta 4
Bexley 4
Chennai 4
Fuzhou 4
Haikou 4
Hải Dương 4
Jeddah 4
Totale 6.039
Nome #
Solvent induced stresses during sorption in glassy polycarbonate: experimental analysis and model simulation for a novel bending cantilever apparatus 226
Use of an automated spring balance for the simultaneous measurement of sorption and swelling in polymeric films 218
A simulative method for the analysis of conduction properties of ion channels based on first-principle approaches 209
A Simulative Model for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches 198
Closed-form transition rate in hopping conduction 193
A 5th-order method for 1D-device solution 190
A New Hopping Model for Transport in Chalcogenide Glasses 189
Biased Molecular Simulations for Free-Energy Mapping: A Comparison on the KcsA Channel as a Test Case 176
Efficient numerics for thermally-assisted trap-limited conduction in chalcogenides 170
Multilevel modeling for charge transport in Ovonic chalcogenide materials and devices 169
Novel 3D random-network model for threshold switching of phase-change memories 166
Computational Analysis of Current and Noise Properties of a Single Open Ion Channel 162
Band Calculation for the Hexagonal and FCC Chalcogenide Ge2Sb2Te5 160
Self-Heating Phase-Change Memory-Array Demonstrator for True Random Number Generation 160
GPU-accelerated algorithms for many-particle continuous-time quantum walks 158
Electric response of ovonic materials to oscillating potentials 158
Investigation of Charge Transport in Amorphous Ge2Sb2Te5 Using the Variable-Range Hopping Model 157
A Model for Charge Transport in Amorphous GST Based on a Modified Variable-Range Hopping Process 155
Electrical bistability in amorphous semiconductors: A basic analytical theory 154
Physical Mechanisms for Ion-Current Levelling off in the KcsA Channel through Combined Monte Carlo/Molecular Dynamics Simulations 152
Transient and oscillating response of Ovonic devices for high-speed electronics 152
Monte Carlo simulation of charge transport in amorphous chalcogenides 151
Intrinsic and Extrinsic Stability of Ovonic-Switching Devices 148
Noisy quantum walks of two indistinguishable interacting particles 147
Transport Scaling Limits of Ovonic Devices: A Simulative Approach 147
Modeling the Dynamic Self-Heating of PCM 146
Time- and space-dependent electric response of Ovonic devices 146
Shot noise in single open ion channels: A computational approach based on atomistic simulations 143
Quantum walks of two interacting particles on percolation graphs 143
Hot-carrier trap-limited transport in switching chalcogenides 141
Exploring Free-Energy Profiles Through Ion Channels: Comparison on a Test Case 140
Electronic, Optical and Thermal Properties of the Hexagonal and Rock Salt-Like Ge2Sb2Te5 Chalcogenide from First Principle Calculations 140
Implementing physical unclonable functions using PCM arrays 140
Back and forth from Fock space to Hilbert space: a guide for commuters 140
Time-dependent transport in amorphous semiconductors: Instability in the field-controlled regime 138
Conductive preferential paths of hot carriers in amorphous phase-change materials 137
Modeling of the voltage snap-back in amorphous-GST memory devices 137
Modeling of the oscillation decay in PCM 136
High-Order Solution Scheme for Transport in Low-D Devices 135
Ovonic materials for memory nano-devices: Stability of I(V) measurements 135
Quantum Electronic Trap-to-Band Transitions in Chalcogenides Induced by Electron-Electron Interaction 133
Quantitative analysis of solvent induced polymer dilation through FTIR-ATR spectroscopy 132
Monte Carlo simulation of charge transport in amorphous chalcogenides 132
Mechanical and electrical characterization of CVD-grown graphene transferred on chalcogenide Ge2Sb2Te5layers 132
Nanoscale phase change memory with graphene ribbon electrodes 132
Intrinsic Electric Oscillations of Ovonic Devices towards the TeraHertz Limit 131
Voltage Snapback in Amorphous-GST Memory Devices: Transport Model and Validation 128
Exploring free-energy profiles through ion channels: Comparison on a test case 127
Shot noise in single open ion channels: a computational approach based on atomistic simulations 126
Hot-electron conduction in Ovonic materials 124
Diffusion and high-frequency noise of electrons in amorphous semiconductors at low electric fields 123
Cinetica del rigonfiamento di matrici polimeriche vetrose indotta dall'assorbimento di gas o vapori 122
Stress effects on mass transport in polymers: a model for volume relaxation 121
Monte Carlo simulation of charge transport in amorphous GST 118
Current-Driven Monte Carlo Simulation of Conduction in Switching Chalcogenides 118
Simulation of Charge Transport in Ovonic Materials 106
Noise Properties of Single Open Ion Channels: an Atomistic Computational Approach 102
Transport in a 3D Network Using the Hydrodynamic Model 88
Three-dimensional network model for charge transport in amorphous PCM devices 87
Totale 8.644
Categoria #
all - tutte 22.991
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 22.991


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021201 0 0 0 0 0 0 0 0 0 0 0 201
2021/2022885 116 49 93 45 83 56 29 75 38 12 123 166
2022/2023955 97 164 38 126 55 70 33 34 159 10 96 73
2023/2024252 14 44 30 20 34 72 8 7 2 6 3 12
2024/20251.130 121 176 77 82 295 62 48 4 6 42 31 186
2025/20262.197 106 140 301 125 302 153 218 154 479 125 31 63
Totale 8.644