CRIS Current Research Information System

PICCININI, ENRICO
 Distribuzione geografica
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Continente #
NA - Nord America 2.738
EU - Europa 1.586
AS - Asia 582
AF - Africa 145
SA - Sud America 4
Totale 5.055
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Nazione #
US - Stati Uniti d'America 2.736
GB - Regno Unito 554
CN - Cina 259
DE - Germania 241
VN - Vietnam 198
IT - Italia 180
UA - Ucraina 145
SE - Svezia 121
IN - India 107
IE - Irlanda 97
FR - Francia 82
TG - Togo 75
RU - Federazione Russa 68
EE - Estonia 57
ZA - Sudafrica 48
BE - Belgio 24
SC - Seychelles 15
NG - Nigeria 6
CH - Svizzera 5
JP - Giappone 5
GR - Grecia 3
IR - Iran 3
KR - Corea 3
LB - Libano 3
PL - Polonia 3
AT - Austria 2
BR - Brasile 2
CA - Canada 2
NO - Norvegia 2
CL - Cile 1
FI - Finlandia 1
ID - Indonesia 1
NL - Olanda 1
SG - Singapore 1
TN - Tunisia 1
TR - Turchia 1
UY - Uruguay 1
UZ - Uzbekistan 1
Totale 5.055
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Città #
Southend 499
Fairfield 451
Ashburn 280
Woodbridge 237
Seattle 222
Wilmington 208
Houston 194
Chandler 181
Ann Arbor 166
Cambridge 159
Princeton 123
Dublin 97
Jacksonville 97
Lomé 75
Dong Ket 72
Westminster 59
Padova 56
Nanjing 50
Turin 38
Berlin 37
Saint Petersburg 33
Shenyang 31
Medford 29
San Diego 29
Jinan 26
Mülheim 25
Nanchang 24
Brussels 22
Hebei 22
Changsha 17
Bologna 15
Dearborn 15
Milan 15
Mahé 14
Boardman 10
Jiaxing 10
Norwalk 10
Beijing 9
Des Moines 8
Falls Church 8
Hangzhou 8
Kunming 8
Modena 8
Tianjin 8
Abeokuta 6
Bremen 6
Ningbo 6
Redmond 5
San Francisco 5
Taizhou 5
Verona 5
Zhengzhou 5
Haikou 4
Lanzhou 4
London 4
New Delhi 4
Tokyo 4
Bern 3
Fuzhou 3
Guangzhou 3
Olalla 3
San Jose 3
Zanjan 3
Andover 2
Chiswick 2
Como 2
Frankfurt Am Main 2
Hefei 2
Heverlee 2
Imola 2
Montreal 2
Muizenberg 2
Orange 2
Oslo 2
Phoenix 2
Redwood City 2
San Venanzo 2
Stockholm 2
Taiyuan 2
Amsterdam 1
Buffalo 1
Cassano D'adda 1
Cercola 1
Changchun 1
Chongqing 1
Delhi 1
Fayetteville 1
Fremont 1
Genzano Di Roma 1
Gif-sur-yvette 1
Graz 1
Helsinki 1
Islington 1
Los Angeles 1
Montevideo 1
New Bedfont 1
Palermo 1
Paris 1
Pavullo 1
Plauen 1
Totale 3.839
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Nome #
A simulative method for the analysis of conduction properties of ion channels based on first-principle approaches 154
Use of an automated spring balance for the simultaneous measurement of sorption and swelling in polymeric films 148
A Simulative Model for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches 131
A New Hopping Model for Transport in Chalcogenide Glasses 131
Closed-form transition rate in hopping conduction 125
Computational Analysis of Current and Noise Properties of a Single Open Ion Channel 120
Biased Molecular Simulations for Free-Energy Mapping: A Comparison on the KcsA Channel as a Test Case 119
A 5th-order method for 1D-device solution 116
Solvent induced stresses during sorption in glassy polycarbonate: experimental analysis and model simulation for a novel bending cantilever apparatus 112
Multilevel modeling for charge transport in Ovonic chalcogenide materials and devices 111
Monte Carlo simulation of charge transport in amorphous chalcogenides 110
Band Calculation for the Hexagonal and FCC Chalcogenide Ge2Sb2Te5 108
Investigation of Charge Transport in Amorphous Ge2Sb2Te5 Using the Variable-Range Hopping Model 97
A Model for Charge Transport in Amorphous GST Based on a Modified Variable-Range Hopping Process 96
Transient and oscillating response of Ovonic devices for high-speed electronics 95
Exploring Free-Energy Profiles Through Ion Channels: Comparison on a Test Case 94
Novel 3D random-network model for threshold switching of phase-change memories 93
Physical Mechanisms for Ion-Current Levelling off in the KcsA Channel through Combined Monte Carlo/Molecular Dynamics Simulations 91
Shot noise in single open ion channels: A computational approach based on atomistic simulations 91
Back and forth from Fock space to Hilbert space: a guide for commuters 91
Electrical bistability in amorphous semiconductors: A basic analytical theory 90
Noisy quantum walks of two indistinguishable interacting particles 89
Electronic, Optical and Thermal Properties of the Hexagonal and Rock Salt-Like Ge2Sb2Te5 Chalcogenide from First Principle Calculations 88
Monte Carlo simulation of charge transport in amorphous chalcogenides 88
Modeling the Dynamic Self-Heating of PCM 87
GPU-accelerated algorithms for many-particle continuous-time quantum walks 87
Efficient numerics for thermally-assisted trap-limited conduction in chalcogenides 86
Electric response of ovonic materials to oscillating potentials 86
Conductive preferential paths of hot carriers in amorphous phase-change materials 85
High-Order Solution Scheme for Transport in Low-D Devices 85
Self-Heating Phase-Change Memory-Array Demonstrator for True Random Number Generation 85
Modeling of the voltage snap-back in amorphous-GST memory devices 85
Quantum Electronic Trap-to-Band Transitions in Chalcogenides Induced by Electron-Electron Interaction 84
Voltage Snapback in Amorphous-GST Memory Devices: Transport Model and Validation 83
Exploring free-energy profiles through ion channels: Comparison on a test case 82
Diffusion and high-frequency noise of electrons in amorphous semiconductors at low electric fields 82
Time- and space-dependent electric response of Ovonic devices 82
Hot-carrier trap-limited transport in switching chalcogenides 79
Implementing physical unclonable functions using PCM arrays 79
Ovonic materials for memory nano-devices: Stability of I(V) measurements 77
Intrinsic and Extrinsic Stability of Ovonic-Switching Devices 77
Shot noise in single open ion channels: a computational approach based on atomistic simulations 76
Transport Scaling Limits of Ovonic Devices: A Simulative Approach 76
Stress effects on mass transport in polymers: a model for volume relaxation 75
Quantum walks of two interacting particles on percolation graphs 75
Nanoscale phase change memory with graphene ribbon electrodes 74
Hot-electron conduction in Ovonic materials 73
Time-dependent transport in amorphous semiconductors: Instability in the field-controlled regime 73
Current-Driven Monte Carlo Simulation of Conduction in Switching Chalcogenides 70
Intrinsic Electric Oscillations of Ovonic Devices towards the TeraHertz Limit 70
Cinetica del rigonfiamento di matrici polimeriche vetrose indotta dall'assorbimento di gas o vapori 67
Mechanical and electrical characterization of CVD-grown graphene transferred on chalcogenide Ge2Sb2Te5layers 66
Noise Properties of Single Open Ion Channels: an Atomistic Computational Approach 65
Quantitative analysis of solvent induced polymer dilation through FTIR-ATR spectroscopy 64
Monte Carlo simulation of charge transport in amorphous GST 60
Modeling of the oscillation decay in PCM 56
Simulation of Charge Transport in Ovonic Materials 47
Three-dimensional network model for charge transport in amorphous PCM devices 41
Transport in a 3D Network Using the Hydrodynamic Model 36
Totale 5.163
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Categoria #
all - tutte 8.933
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.933
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019354 0 0 6 44 7 54 21 9 32 83 38 60
2019/20201.851 233 42 20 105 212 209 243 243 270 113 57 104
2020/2021768 183 72 15 46 22 32 3 44 48 63 39 201
2021/2022885 116 49 93 45 83 56 29 75 38 12 123 166
2022/2023978 97 164 38 126 55 70 38 35 167 12 100 76
2023/202475 15 46 14 0 0 0 0 0 0 0 0 0
Totale 5.163