CRIS Current Research Information System

PICCININI, ENRICO
 Distribuzione geografica
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Continente #
NA - Nord America 3.501
EU - Europa 1.820
AS - Asia 1.790
AF - Africa 161
SA - Sud America 122
OC - Oceania 2
Continente sconosciuto - Info sul continente non disponibili 1
Totale 7.397
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Nazione #
US - Stati Uniti d'America 3.482
SG - Singapore 609
GB - Regno Unito 570
CN - Cina 544
VN - Vietnam 297
DE - Germania 287
IT - Italia 202
UA - Ucraina 150
IN - India 143
SE - Svezia 124
HK - Hong Kong 121
RU - Federazione Russa 121
FR - Francia 109
IE - Irlanda 93
BR - Brasile 87
TG - Togo 75
EE - Estonia 58
ZA - Sudafrica 51
NL - Olanda 46
JP - Giappone 33
BG - Bulgaria 23
AR - Argentina 20
KR - Corea 20
SC - Seychelles 15
BE - Belgio 11
CA - Canada 11
NG - Nigeria 7
PL - Polonia 7
CI - Costa d'Avorio 6
EC - Ecuador 6
CH - Svizzera 5
MX - Messico 5
ES - Italia 4
GR - Grecia 4
IQ - Iraq 3
IR - Iran 3
LB - Libano 3
MA - Marocco 3
PY - Paraguay 3
AT - Austria 2
BD - Bangladesh 2
ID - Indonesia 2
NO - Norvegia 2
PE - Perù 2
TN - Tunisia 2
TR - Turchia 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
CL - Cile 1
CY - Cipro 1
DZ - Algeria 1
FI - Finlandia 1
IL - Israele 1
JM - Giamaica 1
JO - Giordania 1
KE - Kenya 1
KH - Cambogia 1
KZ - Kazakistan 1
LT - Lituania 1
NC - Nuova Caledonia 1
NZ - Nuova Zelanda 1
TH - Thailandia 1
TW - Taiwan 1
UZ - Uzbekistan 1
VE - Venezuela 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 7.397
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Città #
Southend 499
Fairfield 451
Ashburn 435
Singapore 403
Woodbridge 237
Santa Clara 228
Seattle 227
Wilmington 208
Houston 196
Chandler 181
Ann Arbor 166
Cambridge 159
Princeton 123
Hong Kong 120
Jacksonville 97
Dublin 93
Beijing 88
Lomé 75
Dong Ket 72
Boardman 69
Westminster 59
Hefei 56
Padova 56
Nanjing 54
Frankfurt am Main 50
Ho Chi Minh City 39
Turin 38
Berlin 37
Saint Petersburg 33
Los Angeles 32
Tokyo 32
Shenyang 31
Medford 29
San Diego 29
Jinan 27
Hyderabad 26
Mülheim 25
Nanchang 24
Redondo Beach 24
Dallas 23
Sofia 23
Hebei 22
Buffalo 20
Bologna 18
Changsha 18
Milan 18
Hanoi 17
Seoul 17
Washington 17
Dearborn 15
Mahé 14
Tianjin 12
Hangzhou 11
Yubileyny 11
Jiaxing 10
Norwalk 10
Brussels 9
Guangzhou 9
Kunming 9
New York 9
Des Moines 8
Falls Church 8
Modena 8
Phoenix 8
San Francisco 8
Shanghai 8
Orem 7
São Paulo 7
Taizhou 7
Abeokuta 6
Abidjan 6
Bremen 6
Ningbo 6
Zhengzhou 6
London 5
Montreal 5
Redmond 5
Rio de Janeiro 5
Verona 5
Wuhan 5
Amsterdam 4
Bexley 4
Biên Hòa 4
Da Nang 4
Denver 4
Fuzhou 4
Haikou 4
Lanzhou 4
New Delhi 4
Shenzhen 4
Stockholm 4
Belo Horizonte 3
Bengaluru 3
Bern 3
Buenos Aires 3
Foshan 3
Ninh Bình 3
Olalla 3
Quito 3
San Jose 3
Totale 5.340
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Nome #
Use of an automated spring balance for the simultaneous measurement of sorption and swelling in polymeric films 205
A simulative method for the analysis of conduction properties of ion channels based on first-principle approaches 203
A Simulative Model for the Analysis of Conduction Properties of Ion Channels Based on First-Principle Approaches 188
Solvent induced stresses during sorption in glassy polycarbonate: experimental analysis and model simulation for a novel bending cantilever apparatus 186
A New Hopping Model for Transport in Chalcogenide Glasses 174
Closed-form transition rate in hopping conduction 168
A 5th-order method for 1D-device solution 163
Biased Molecular Simulations for Free-Energy Mapping: A Comparison on the KcsA Channel as a Test Case 157
Computational Analysis of Current and Noise Properties of a Single Open Ion Channel 149
Multilevel modeling for charge transport in Ovonic chalcogenide materials and devices 148
Novel 3D random-network model for threshold switching of phase-change memories 147
Band Calculation for the Hexagonal and FCC Chalcogenide Ge2Sb2Te5 145
Physical Mechanisms for Ion-Current Levelling off in the KcsA Channel through Combined Monte Carlo/Molecular Dynamics Simulations 144
Investigation of Charge Transport in Amorphous Ge2Sb2Te5 Using the Variable-Range Hopping Model 136
Efficient numerics for thermally-assisted trap-limited conduction in chalcogenides 136
Monte Carlo simulation of charge transport in amorphous chalcogenides 134
A Model for Charge Transport in Amorphous GST Based on a Modified Variable-Range Hopping Process 134
Electrical bistability in amorphous semiconductors: A basic analytical theory 132
Shot noise in single open ion channels: A computational approach based on atomistic simulations 131
Modeling the Dynamic Self-Heating of PCM 131
Transient and oscillating response of Ovonic devices for high-speed electronics 131
Electric response of ovonic materials to oscillating potentials 129
Exploring Free-Energy Profiles Through Ion Channels: Comparison on a Test Case 128
Electronic, Optical and Thermal Properties of the Hexagonal and Rock Salt-Like Ge2Sb2Te5 Chalcogenide from First Principle Calculations 126
Quantum walks of two interacting particles on percolation graphs 126
High-Order Solution Scheme for Transport in Low-D Devices 124
Monte Carlo simulation of charge transport in amorphous chalcogenides 124
Time- and space-dependent electric response of Ovonic devices 123
Back and forth from Fock space to Hilbert space: a guide for commuters 123
GPU-accelerated algorithms for many-particle continuous-time quantum walks 122
Self-Heating Phase-Change Memory-Array Demonstrator for True Random Number Generation 122
Modeling of the voltage snap-back in amorphous-GST memory devices 122
Conductive preferential paths of hot carriers in amorphous phase-change materials 121
Noisy quantum walks of two indistinguishable interacting particles 121
Quantum Electronic Trap-to-Band Transitions in Chalcogenides Induced by Electron-Electron Interaction 119
Voltage Snapback in Amorphous-GST Memory Devices: Transport Model and Validation 118
Hot-carrier trap-limited transport in switching chalcogenides 118
Intrinsic and Extrinsic Stability of Ovonic-Switching Devices 117
Transport Scaling Limits of Ovonic Devices: A Simulative Approach 116
Diffusion and high-frequency noise of electrons in amorphous semiconductors at low electric fields 113
Implementing physical unclonable functions using PCM arrays 113
Quantitative analysis of solvent induced polymer dilation through FTIR-ATR spectroscopy 112
Shot noise in single open ion channels: a computational approach based on atomistic simulations 111
Exploring free-energy profiles through ion channels: Comparison on a test case 111
Cinetica del rigonfiamento di matrici polimeriche vetrose indotta dall'assorbimento di gas o vapori 111
Mechanical and electrical characterization of CVD-grown graphene transferred on chalcogenide Ge2Sb2Te5layers 111
Ovonic materials for memory nano-devices: Stability of I(V) measurements 110
Time-dependent transport in amorphous semiconductors: Instability in the field-controlled regime 109
Nanoscale phase change memory with graphene ribbon electrodes 109
Modeling of the oscillation decay in PCM 107
Hot-electron conduction in Ovonic materials 107
Intrinsic Electric Oscillations of Ovonic Devices towards the TeraHertz Limit 106
Current-Driven Monte Carlo Simulation of Conduction in Switching Chalcogenides 104
Stress effects on mass transport in polymers: a model for volume relaxation 103
Monte Carlo simulation of charge transport in amorphous GST 100
Noise Properties of Single Open Ion Channels: an Atomistic Computational Approach 93
Simulation of Charge Transport in Ovonic Materials 85
Three-dimensional network model for charge transport in amorphous PCM devices 75
Transport in a 3D Network Using the Hydrodynamic Model 74
Totale 7.505
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Categoria #
all - tutte 20.043
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 20.043
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021430 0 0 0 0 0 32 3 44 48 63 39 201
2021/2022885 116 49 93 45 83 56 29 75 38 12 123 166
2022/2023955 97 164 38 126 55 70 33 34 159 10 96 73
2023/2024252 14 44 30 20 34 72 8 7 2 6 3 12
2024/20251.130 121 176 77 82 295 62 48 4 6 42 31 186
2025/20261.058 106 140 301 125 302 84 0 0 0 0 0 0
Totale 7.505