Charge transport in amorphous chalcogenide-GST used for memory devices is modeled using two contributions: hopping of trapped electrons and motion of band electrons in extended states. The type of feedback that produces the snapback phenomenon is described as a filamentation in energy that is controlled by electron-electron interactions between trapped electrons and band electrons. The model thus derived is implemented within a state-of-the-art simulator. An analytical version of the model is also derived and is useful for discussing the snapback behavior and the scaling properties of the device.
M. Rudan, F. Giovanardi, E. Piccinini, F. Buscemi, R. Brunetti, C. Jacoboni (2011). Voltage Snapback in Amorphous-GST Memory Devices: Transport Model and Validation. IEEE TRANSACTIONS ON ELECTRON DEVICES, 58, 4361-4369 [10.1109/TED.2011.2168402].
Voltage Snapback in Amorphous-GST Memory Devices: Transport Model and Validation
RUDAN, MASSIMO;GIOVANARDI, FABIO;PICCININI, ENRICO;BUSCEMI, FABRIZIO;
2011
Abstract
Charge transport in amorphous chalcogenide-GST used for memory devices is modeled using two contributions: hopping of trapped electrons and motion of band electrons in extended states. The type of feedback that produces the snapback phenomenon is described as a filamentation in energy that is controlled by electron-electron interactions between trapped electrons and band electrons. The model thus derived is implemented within a state-of-the-art simulator. An analytical version of the model is also derived and is useful for discussing the snapback behavior and the scaling properties of the device.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
