Electric conduction in ovonic materials is analyzed with special attention to chalcogenide glasses used for phase-change memories. A general theory is presented based on plausible microscopic assumptions. Electric field, carrier concentration, and electron temperature along the device, as well as diffusion and Poisson self-consistency, are considered. The effect of different ranges of localized levels in the gap is analyzed. The results account for and interpret all main experimental findings in phase-change memory cells.
C. Jacoboni, E. Piccinini, F. Buscemi, A. Cappelli (2013). Hot-electron conduction in Ovonic materials. SOLID-STATE ELECTRONICS, 84, 90-95 [10.1016/j.sse.2013.02.007].
Hot-electron conduction in Ovonic materials
PICCININI, ENRICO;BUSCEMI, FABRIZIO;
2013
Abstract
Electric conduction in ovonic materials is analyzed with special attention to chalcogenide glasses used for phase-change memories. A general theory is presented based on plausible microscopic assumptions. Electric field, carrier concentration, and electron temperature along the device, as well as diffusion and Poisson self-consistency, are considered. The effect of different ranges of localized levels in the gap is analyzed. The results account for and interpret all main experimental findings in phase-change memory cells.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
