Electric conduction in ovonic materials is analyzed with special attention to chalcogenide glasses used for phase-change memories. A general theory is presented based on plausible microscopic assumptions. Electric field, carrier concentration, and electron temperature along the device, as well as diffusion and Poisson self-consistency, are considered. The effect of different ranges of localized levels in the gap is analyzed. The results account for and interpret all main experimental findings in phase-change memory cells.

Hot-electron conduction in Ovonic materials / C. Jacoboni; E. Piccinini; F. Buscemi; A. Cappelli. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 84:(2013), pp. 90-95. [10.1016/j.sse.2013.02.007]

Hot-electron conduction in Ovonic materials

PICCININI, ENRICO;BUSCEMI, FABRIZIO;
2013

Abstract

Electric conduction in ovonic materials is analyzed with special attention to chalcogenide glasses used for phase-change memories. A general theory is presented based on plausible microscopic assumptions. Electric field, carrier concentration, and electron temperature along the device, as well as diffusion and Poisson self-consistency, are considered. The effect of different ranges of localized levels in the gap is analyzed. The results account for and interpret all main experimental findings in phase-change memory cells.
2013
Hot-electron conduction in Ovonic materials / C. Jacoboni; E. Piccinini; F. Buscemi; A. Cappelli. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 84:(2013), pp. 90-95. [10.1016/j.sse.2013.02.007]
C. Jacoboni; E. Piccinini; F. Buscemi; A. Cappelli
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/162841
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