The Ohmic conduction, diffusion, and high-frequency noise in amorphous semiconductors are here investigated by means of a Monte Carlo implementation of a full threedimensional variable-range hopping transport model between localized states. Quantities like the carrier-velocity autocorrelation function, the noise power spectrum, the diffusion coefficient and the ohmic conductivity are obtained from numerical simulations at room and lower temperatures. Some interesting features of the linear-response regime typical of hopping transport are observed and discussed.
Diffusion and high-frequency noise of electrons in amorphous semiconductors at low electric fields / F. Buscemi; E. Piccinini; M. Rudan; R. Brunetti; C. Jacoboni. - In: FLUCTUATION AND NOISE LETTERS. - ISSN 0219-4775. - STAMPA. - 11:3(2012), pp. 1242004-01-1242004-10. [10.1142/S0219477512420047]
Diffusion and high-frequency noise of electrons in amorphous semiconductors at low electric fields
BUSCEMI, FABRIZIO;PICCININI, ENRICO;RUDAN, MASSIMO;
2012
Abstract
The Ohmic conduction, diffusion, and high-frequency noise in amorphous semiconductors are here investigated by means of a Monte Carlo implementation of a full threedimensional variable-range hopping transport model between localized states. Quantities like the carrier-velocity autocorrelation function, the noise power spectrum, the diffusion coefficient and the ohmic conductivity are obtained from numerical simulations at room and lower temperatures. Some interesting features of the linear-response regime typical of hopping transport are observed and discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
