The Ohmic conduction, diffusion, and high-frequency noise in amorphous semiconductors are here investigated by means of a Monte Carlo implementation of a full threedimensional variable-range hopping transport model between localized states. Quantities like the carrier-velocity autocorrelation function, the noise power spectrum, the diffusion coefficient and the ohmic conductivity are obtained from numerical simulations at room and lower temperatures. Some interesting features of the linear-response regime typical of hopping transport are observed and discussed.
Diffusion and high-frequency noise of electrons in amorphous semiconductors at low electric fields
BUSCEMI, FABRIZIO;PICCININI, ENRICO;RUDAN, MASSIMO;
2012
Abstract
The Ohmic conduction, diffusion, and high-frequency noise in amorphous semiconductors are here investigated by means of a Monte Carlo implementation of a full threedimensional variable-range hopping transport model between localized states. Quantities like the carrier-velocity autocorrelation function, the noise power spectrum, the diffusion coefficient and the ohmic conductivity are obtained from numerical simulations at room and lower temperatures. Some interesting features of the linear-response regime typical of hopping transport are observed and discussed.File in questo prodotto:
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