statistiche ricercatore

Nome	#
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs	180
AC and DC numerical simulation of Self–Heating Effects in FinFETs	155
Analysis of Scaling Strategies for Sub-30 nm Double-Gate SOI N-MOSFETs	154
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs	139
Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections	131
Simulation of Self-Heating Effects in Different SOI MOS Architectures	127
Monte-Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections	124
Analysis of two alternative scaling strategies for sub-30 nm Double-Gate SOI MOSFETs	120
Simulation of self-heating effects in 30 nm gate length FinFET	120
Monte-Carlo simulation of MOSFETs with band offsets in the source and drain	119
Scaling the High-Performance Double-Gate SOI MOSFET down to the 32 nm Technology Node with SiO2-based Gate Stacks	114
Comparison of BULK and Ultra-Thin Double Gate SOI MOSFETs for the 65 nm Technology Node: a Monte-Carlo Study	104
Comparative analysis of self-heating in different SOI architectures	100
Monte Carlo simulation of MOSFETs with band-offsets in the source and drain	98
Simulation of Bulk and SOI Digital Circuits Including Self-Heating Effects	83
Totale	1.868

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2018/2019	20	0	0	0	0	0	0	0	0	0	0	2	18
2019/2020	348	65	11	9	15	29	34	39	39	44	26	10	27
2020/2021	261	47	14	8	16	0	18	6	13	19	11	11	98
2021/2022	749	47	7	95	84	95	82	79	77	84	17	38	44
2022/2023	286	19	28	11	47	16	29	4	8	79	2	18	25
2023/2024	65	6	11	2	5	4	27	4	4	2	0	0	0
Totale													1.868

CRIS Current Research Information System