statistiche ricercatore

Nome	#
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs	200
AC and DC numerical simulation of Self–Heating Effects in FinFETs	180
Analysis of Scaling Strategies for Sub-30 nm Double-Gate SOI N-MOSFETs	174
Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs	151
Monte-Carlo simulation of decananometric nMOSFETs: Multi-subband vs. 3D-electron gas with quantum corrections	148
Simulation of Self-Heating Effects in Different SOI MOS Architectures	142
Monte-Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections	135
Simulation of self-heating effects in 30 nm gate length FinFET	135
Analysis of two alternative scaling strategies for sub-30 nm Double-Gate SOI MOSFETs	131
Monte-Carlo simulation of MOSFETs with band offsets in the source and drain	131
Scaling the High-Performance Double-Gate SOI MOSFET down to the 32 nm Technology Node with SiO2-based Gate Stacks	128
Comparative analysis of self-heating in different SOI architectures	120
Comparison of BULK and Ultra-Thin Double Gate SOI MOSFETs for the 65 nm Technology Node: a Monte-Carlo Study	116
Monte Carlo simulation of MOSFETs with band-offsets in the source and drain	109
Simulation of Bulk and SOI Digital Circuits Including Self-Heating Effects	97
Totale	2.097

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2019/2020	185	0	0	0	0	0	0	39	39	44	26	10	27
2020/2021	261	47	14	8	16	0	18	6	13	19	11	11	98
2021/2022	749	47	7	95	84	95	82	79	77	84	17	38	44
2022/2023	286	19	28	11	47	16	29	4	8	79	2	18	25
2023/2024	66	6	11	2	5	4	27	4	4	2	0	0	1
2024/2025	228	32	53	18	31	78	12	4	0	0	0	0	0
Totale													2.097

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