Full-band Monte Carlo simulation of short-channel Double-Gate SOI MOSFETs were used to assess possible improvement of drain current in devices featuring conduction-band offsets between the source and the channel, obyained adopting non-conventional materials for the source and drain regions.
M. Braccioli, P. Palestri, T. Poiroux, M. Vinet, G. Le Carval, M. Mouis, et al. (2007). Monte Carlo simulation of MOSFETs with band-offsets in the source and drain. S. L. : S. N..
Monte Carlo simulation of MOSFETs with band-offsets in the source and drain
BRACCIOLI, MARCO;FIEGNA, CLAUDIO;SANGIORGI, ENRICO
2007
Abstract
Full-band Monte Carlo simulation of short-channel Double-Gate SOI MOSFETs were used to assess possible improvement of drain current in devices featuring conduction-band offsets between the source and the channel, obyained adopting non-conventional materials for the source and drain regions.File in questo prodotto:
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