We study the impact of self-heating on device characteristics to compare advantages of double-gate silicon on insulator (DGSOI) over bulk technology. Performance comparison of digital circuits like three stage ring oscillator has been made. Impact of self-heating on the performance of oscillator implemented with SOI double gate FETs and bulkFETs has also been investigated. Although self-heating affects the performance of digital circuits for scaled SOI technologies considerably due to poor thermal conductivity of the buried oxide layer, DGSOI circuits retain a significant advantage over bulk counterpart.

Simulation of Bulk and SOI Digital Circuits Including Self-Heating Effects

BRACCIOLI, MARCO;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2010

Abstract

We study the impact of self-heating on device characteristics to compare advantages of double-gate silicon on insulator (DGSOI) over bulk technology. Performance comparison of digital circuits like three stage ring oscillator has been made. Impact of self-heating on the performance of oscillator implemented with SOI double gate FETs and bulkFETs has also been investigated. Although self-heating affects the performance of digital circuits for scaled SOI technologies considerably due to poor thermal conductivity of the buried oxide layer, DGSOI circuits retain a significant advantage over bulk counterpart.
Proceedings of the Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits
111
112
U. Roy; M. Braccioli; E. Sangiorgi; C. Fiegna
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/88579
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