We study the impact of self-heating on device characteristics to compare advantages of double-gate silicon on insulator (DGSOI) over bulk technology. Performance comparison of digital circuits like three stage ring oscillator has been made. Impact of self-heating on the performance of oscillator implemented with SOI double gate FETs and bulkFETs has also been investigated. Although self-heating affects the performance of digital circuits for scaled SOI technologies considerably due to poor thermal conductivity of the buried oxide layer, DGSOI circuits retain a significant advantage over bulk counterpart.
U. Roy, M. Braccioli, E. Sangiorgi, C. Fiegna (2010). Simulation of Bulk and SOI Digital Circuits Including Self-Heating Effects. GRENOBLE : s.n.
Simulation of Bulk and SOI Digital Circuits Including Self-Heating Effects
BRACCIOLI, MARCO;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2010
Abstract
We study the impact of self-heating on device characteristics to compare advantages of double-gate silicon on insulator (DGSOI) over bulk technology. Performance comparison of digital circuits like three stage ring oscillator has been made. Impact of self-heating on the performance of oscillator implemented with SOI double gate FETs and bulkFETs has also been investigated. Although self-heating affects the performance of digital circuits for scaled SOI technologies considerably due to poor thermal conductivity of the buried oxide layer, DGSOI circuits retain a significant advantage over bulk counterpart.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
