We study the impact of self-heating on device characteristics to compare advantages of double-gate silicon on insulator (DGSOI) over bulk technology. Performance comparison of digital circuits like three stage ring oscillator has been made. Impact of self-heating on the performance of oscillator implemented with SOI double gate FETs and bulkFETs has also been investigated. Although self-heating affects the performance of digital circuits for scaled SOI technologies considerably due to poor thermal conductivity of the buried oxide layer, DGSOI circuits retain a significant advantage over bulk counterpart.
Simulation of Bulk and SOI Digital Circuits Including Self-Heating Effects / U. Roy; M. Braccioli; E. Sangiorgi; C. Fiegna. - STAMPA. - (2010), pp. 111-112. (Intervento presentato al convegno Sixth Workshop of the Thematic Network on Silicon-On-Insulator Technology, Devices and Circuits tenutosi a Greboble, France nel 25-27 January 2010).
Simulation of Bulk and SOI Digital Circuits Including Self-Heating Effects
BRACCIOLI, MARCO;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2010
Abstract
We study the impact of self-heating on device characteristics to compare advantages of double-gate silicon on insulator (DGSOI) over bulk technology. Performance comparison of digital circuits like three stage ring oscillator has been made. Impact of self-heating on the performance of oscillator implemented with SOI double gate FETs and bulkFETs has also been investigated. Although self-heating affects the performance of digital circuits for scaled SOI technologies considerably due to poor thermal conductivity of the buried oxide layer, DGSOI circuits retain a significant advantage over bulk counterpart.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
