We study the impact of self-heating on device characteristics to compare advantages of double-gate silicon on insulator (DGSOI) over bulk technology. Performance comparison of digital circuits like three stage ring oscillator has been made. Impact of self-heating on the performance of oscillator implemented with SOI double gate FETs and bulkFETs has also been investigated. Although self-heating affects the performance of digital circuits for scaled SOI technologies considerably due to poor thermal conductivity of the buried oxide layer, DGSOI circuits retain a significant advantage over bulk counterpart.
File in questo prodotto:
Eventuali allegati, non sono esposti