SILVESTRI, LUCA
 Distribuzione geografica
Continente #
NA - Nord America 1.012
EU - Europa 446
AS - Asia 278
AF - Africa 43
SA - Sud America 3
Totale 1.782
Nazione #
US - Stati Uniti d'America 1.009
GB - Regno Unito 113
VN - Vietnam 107
CN - Cina 77
UA - Ucraina 74
DE - Germania 59
SG - Singapore 57
SE - Svezia 46
IT - Italia 45
IE - Irlanda 23
RU - Federazione Russa 22
IN - India 20
FR - Francia 18
TG - Togo 16
BG - Bulgaria 12
EE - Estonia 12
JO - Giordania 12
SC - Seychelles 10
BE - Belgio 8
ZA - Sudafrica 7
CI - Costa d'Avorio 6
FI - Finlandia 6
PL - Polonia 5
NG - Nigeria 4
CA - Canada 3
BR - Brasile 2
AE - Emirati Arabi Uniti 1
AM - Armenia 1
CL - Cile 1
CZ - Repubblica Ceca 1
GR - Grecia 1
IL - Israele 1
JP - Giappone 1
NL - Olanda 1
TR - Turchia 1
Totale 1.782
Città #
Ann Arbor 389
Southend 95
Dong Ket 83
Fairfield 76
Jacksonville 57
Chandler 56
Ashburn 51
Singapore 51
Wilmington 44
Woodbridge 41
Santa Clara 40
Houston 29
Cambridge 26
Princeton 24
Dublin 23
Seattle 17
Lomé 16
Boardman 14
Amman 12
Sofia 12
Padova 11
Turin 11
Westminster 11
Mahé 10
Mülheim 9
Berlin 8
Brussels 8
Nanjing 7
Saint Petersburg 7
Abidjan 6
Bologna 6
Medford 6
Nanchang 5
San Diego 5
Verona 5
Abeokuta 4
Bremen 4
Des Moines 4
Haikou 4
Hebei 4
Jinan 4
Lappeenranta 4
Shenyang 4
Changsha 3
New York 3
San Venanzo 3
Tianjin 3
Warsaw 3
Washington 3
Zhengzhou 3
Beijing 2
Council Bluffs 2
Helsinki 2
Kunming 2
Milan 2
Ningbo 2
São Paulo 2
Taiyuan 2
Tappahannock 2
Amsterdam 1
Changchun 1
Chengdu 1
Clearwater 1
Cormeilles-en-Parisis 1
Dalian 1
Dearborn 1
Dubai 1
Edinburgh 1
Frankfurt am Main 1
Guangzhou 1
Hangzhou 1
Hefei 1
Hyderabad 1
Jiaxing 1
Lanzhou 1
London 1
Montreal 1
Moscow 1
Muizenberg 1
North Bergen 1
Ottawa 1
Paris 1
Redmond 1
Rizhao 1
San Francisco 1
Shanghai 1
Shenzhen 1
Taizhou 1
Tel Aviv 1
Tokyo 1
Toronto 1
Yerevan 1
Yuncheng 1
Totale 1.376
Nome #
A Low-Field Mobility Model for Bulk and Ultrathin-Body SOI p-MOSFETs With Different Surface and Channel Orientations 230
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs 200
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part II: Ultrathin Silicon Films 188
Comparison of Advanced Transport Models for Nanoscale nMOSFETs 173
Drain current computation in nanoscale nMOSFETs: Comparison of transport models 157
High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs 150
A Low-Field Mobility Model for Bulk, Ultrathin Body SOI and Double-Gate n-MOSFETs With Different Surface and Channel Orientations—Part I: Fundamental Principles 150
Physically-based unified compact model for low-field carrier mobility in MOSFETs with different gate stacks and biaxial/uniaxial stress conditions 149
Effects of channel orientation, high-k gate stacks and stress on UTB-FETs: a QDD simulation study 130
Unified model for low-field mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation 124
Mobility Model for Electrons and Holes in FinFETs with High-k Stacks, Metal Gate and Stress 124
Unified model for low-field electron mobility in bulk and SOI-MOSFETs with different substrate orientations and its application to quantum drift-diffusion simulation 21
Totale 1.796
Categoria #
all - tutte 3.851
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.851


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020124 0 0 0 0 0 0 0 38 33 25 2 26
2020/2021214 36 16 6 12 0 10 0 16 22 11 15 70
2021/2022606 64 5 71 66 79 53 64 55 61 17 34 37
2022/2023293 23 45 13 37 18 20 14 12 63 4 28 16
2023/202475 8 15 5 11 2 18 4 5 2 1 3 1
2024/2025161 20 38 14 21 58 5 5 0 0 0 0 0
Totale 1.796