CRIS Current Research Information System

POLI, STEFANO
 Distribuzione geografica
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Continente #
NA - Nord America 1.766
AS - Asia 753
EU - Europa 707
SA - Sud America 51
AF - Africa 49
OC - Oceania 1
Totale 3.327
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Nazione #
US - Stati Uniti d'America 1.755
SG - Singapore 246
CN - Cina 181
GB - Regno Unito 180
VN - Vietnam 170
DE - Germania 106
UA - Ucraina 97
IT - Italia 80
FR - Francia 59
HK - Hong Kong 56
IN - India 42
RU - Federazione Russa 40
SE - Svezia 39
IE - Irlanda 37
BR - Brasile 34
NL - Olanda 23
JP - Giappone 18
EE - Estonia 17
TG - Togo 15
ZA - Sudafrica 14
BE - Belgio 10
CI - Costa d'Avorio 10
CA - Canada 9
AR - Argentina 7
ID - Indonesia 5
TR - Turchia 5
CH - Svizzera 4
PH - Filippine 4
PL - Polonia 4
SC - Seychelles 4
TW - Taiwan 4
BD - Bangladesh 3
EC - Ecuador 3
IQ - Iraq 3
TH - Thailandia 3
CO - Colombia 2
FI - Finlandia 2
LB - Libano 2
MX - Messico 2
MY - Malesia 2
PK - Pakistan 2
VE - Venezuela 2
AD - Andorra 1
AL - Albania 1
AZ - Azerbaigian 1
BG - Bulgaria 1
CD - Congo 1
CL - Cile 1
DK - Danimarca 1
ES - Italia 1
ET - Etiopia 1
GN - Guinea 1
GR - Grecia 1
IL - Israele 1
IR - Iran 1
JO - Giordania 1
KR - Corea 1
KZ - Kazakistan 1
LT - Lituania 1
MD - Moldavia 1
NG - Nigeria 1
NO - Norvegia 1
NP - Nepal 1
NZ - Nuova Zelanda 1
PE - Perù 1
SN - Senegal 1
TN - Tunisia 1
UY - Uruguay 1
Totale 3.327
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Città #
Ann Arbor 604
Singapore 168
Southend 155
Fairfield 141
Ashburn 97
Wilmington 91
Santa Clara 81
Woodbridge 78
Jacksonville 77
Houston 61
Chandler 59
Seattle 57
Hong Kong 49
Cambridge 48
San Jose 46
Princeton 42
Dong Ket 37
Dublin 37
Hanoi 32
Ho Chi Minh City 31
Beijing 30
Boardman 19
Lauterbourg 19
Padova 18
Tokyo 18
Westminster 18
Turin 16
Lomé 15
Mülheim 14
Nanjing 14
Shenyang 13
Berlin 12
Bologna 11
Buffalo 11
Abidjan 10
Medford 10
Milan 10
Brussels 9
Haiphong 9
Jinan 9
Shanghai 8
Dallas 7
Frankfurt am Main 7
Guangzhou 7
Los Angeles 7
Saint Petersburg 7
San Diego 7
Da Nang 6
New York 6
Hefei 5
Nanchang 5
Redondo Beach 5
San Venanzo 5
Changsha 4
Chicago 4
Des Moines 4
Dortmund 4
Haikou 4
Hebei 4
London 4
Mahé 4
Montreal 4
São Paulo 4
Taiyuan 4
Toronto 4
Zhengzhou 4
Hải Dương 3
Olalla 3
Verona 3
Amsterdam 2
Ankara 2
Atlanta 2
Biên Hòa 2
Brooklyn 2
Buenos Aires 2
Bắc Giang 2
Can Tho 2
Chengdu 2
Frankfurt Am Main 2
Fremont 2
Fuzhou 2
Ha Long 2
Johannesburg 2
Kuala Lumpur 2
Lanzhou 2
Lappeenranta 2
Ludhiana 2
Monteprandone 2
Norwalk 2
Qingdao 2
Rach Gia 2
Redwood City 2
Rio de Janeiro 2
San Francisco 2
Shenzhen 2
Stockholm 2
Temple Hills 2
Tianjin 2
Vezzano 2
Wuxi 2
Totale 2.481
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Nome #
Analysis of HCS in STI-based LDMOS transistors 256
Computational study of the ultimate scaling limits of CNT tunneling devices 215
Numerical investigation of the total SOA of trench field-plate LDMOS devices 208
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 202
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 201
Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight 196
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs 192
Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors 186
Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight 184
Optimization and Analysis of the Dual n/p-LDMOS Device 181
Full Understanding of Hot-Carrier-Induced Degradation in STI-based LDMOS transistors in the Impact-Ionization Operating Regime 178
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 174
Post-processing of data generated by a chaotic pipelined ADC for the robust generation of perfectly random bitstreams 169
TCAD optimization of a dual N/P-LDMOS transistor 168
Tight-binding versus effective-mass modeling of carbon nanotube FETs 167
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs 163
Investigation on the temperature dependence of the HCI effects in the rugged STI-based LDMOS transistor 163
Size Dependence of Surface-Roughness Limited Mobility in Silicon Nanowire FETs 153
Totale 3.356
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Categoria #
all - tutte 8.018
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.018
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202178 0 0 0 0 0 0 0 0 0 0 22 56
2021/2022870 22 16 101 107 120 85 94 84 99 27 48 67
2022/2023324 45 49 13 40 24 10 15 14 55 4 43 12
2023/202460 9 19 5 4 3 1 6 3 0 1 7 2
2024/2025368 25 72 14 27 100 33 15 0 0 21 3 58
2025/2026651 26 40 83 42 124 52 64 16 147 47 10 0
Totale 3.356