CRIS Current Research Information System

POLI, STEFANO
 Distribuzione geografica
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Continente #
NA - Nord America 1.853
AS - Asia 772
EU - Europa 714
SA - Sud America 61
AF - Africa 49
Continente sconosciuto - Info sul continente non disponibili 29
OC - Oceania 1
Totale 3.479
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Nazione #
US - Stati Uniti d'America 1.834
SG - Singapore 253
CN - Cina 187
GB - Regno Unito 181
VN - Vietnam 170
DE - Germania 106
UA - Ucraina 97
IT - Italia 82
FR - Francia 62
HK - Hong Kong 56
IN - India 44
RU - Federazione Russa 40
SE - Svezia 39
IE - Irlanda 38
BR - Brasile 36
NL - Olanda 23
JP - Giappone 18
EE - Estonia 17
TG - Togo 15
CA - Canada 14
ZA - Sudafrica 14
BE - Belgio 10
CI - Costa d'Avorio 10
AR - Argentina 8
CO - Colombia 7
ID - Indonesia 5
TR - Turchia 5
CH - Svizzera 4
EC - Ecuador 4
PH - Filippine 4
PL - Polonia 4
SC - Seychelles 4
TW - Taiwan 4
BD - Bangladesh 3
IQ - Iraq 3
KR - Corea 3
MX - Messico 3
TH - Thailandia 3
VE - Venezuela 3
FI - Finlandia 2
LB - Libano 2
MY - Malesia 2
NP - Nepal 2
PK - Pakistan 2
AD - Andorra 1
AL - Albania 1
AZ - Azerbaigian 1
BG - Bulgaria 1
BZ - Belize 1
CD - Congo 1
CL - Cile 1
DK - Danimarca 1
ES - Italia 1
ET - Etiopia 1
GN - Guinea 1
GR - Grecia 1
HN - Honduras 1
IL - Israele 1
IR - Iran 1
JO - Giordania 1
KZ - Kazakistan 1
LT - Lituania 1
MD - Moldavia 1
NG - Nigeria 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
PE - Perù 1
SA - Arabia Saudita 1
SN - Senegal 1
TN - Tunisia 1
UY - Uruguay 1
Totale 3.450
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Città #
Ann Arbor 604
Singapore 175
Southend 155
Fairfield 141
Ashburn 102
Wilmington 91
Santa Clara 84
Woodbridge 78
Jacksonville 77
Houston 61
Chandler 59
Seattle 57
San Jose 54
Hong Kong 49
Cambridge 48
Princeton 42
Dong Ket 37
Dublin 37
Beijing 34
Hanoi 32
Ho Chi Minh City 31
Council Bluffs 29
Boardman 19
Lauterbourg 19
Padova 18
Tokyo 18
Westminster 18
Turin 16
Lomé 15
Mülheim 14
Nanjing 14
Shenyang 13
Berlin 12
Bologna 11
Buffalo 11
Abidjan 10
Medford 10
Milan 10
Brussels 9
Haiphong 9
Jinan 9
Los Angeles 9
Shanghai 8
Dallas 7
Frankfurt am Main 7
Guangzhou 7
New York 7
Saint Petersburg 7
San Diego 7
Da Nang 6
Hefei 5
Montreal 5
Nanchang 5
Redondo Beach 5
San Venanzo 5
São Paulo 5
Toronto 5
Bogotá 4
Changsha 4
Chicago 4
Des Moines 4
Dortmund 4
Haikou 4
Hebei 4
London 4
Mahé 4
Taiyuan 4
Zhengzhou 4
Hải Dương 3
Olalla 3
San Francisco 3
Verona 3
Amsterdam 2
Ankara 2
Atlanta 2
Biên Hòa 2
Brooklyn 2
Buenos Aires 2
Bắc Giang 2
Can Tho 2
Chengdu 2
Frankfurt Am Main 2
Fremont 2
Fuzhou 2
Ha Long 2
Johannesburg 2
Kuala Lumpur 2
Lanzhou 2
Lappeenranta 2
Ludhiana 2
Monteprandone 2
Norwalk 2
Orlando 2
Paris 2
Philadelphia 2
Porlamar 2
Qingdao 2
Rach Gia 2
Redwood City 2
Rio de Janeiro 2
Totale 2.544
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Nome #
Analysis of HCS in STI-based LDMOS transistors 263
Computational study of the ultimate scaling limits of CNT tunneling devices 223
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 216
Numerical investigation of the total SOA of trench field-plate LDMOS devices 216
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 206
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs 201
Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight 201
Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors 194
Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight 189
Optimization and Analysis of the Dual n/p-LDMOS Device 187
Full Understanding of Hot-Carrier-Induced Degradation in STI-based LDMOS transistors in the Impact-Ionization Operating Regime 185
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 178
Investigation on the temperature dependence of the HCI effects in the rugged STI-based LDMOS transistor 175
Tight-binding versus effective-mass modeling of carbon nanotube FETs 173
Post-processing of data generated by a chaotic pipelined ADC for the robust generation of perfectly random bitstreams 173
TCAD optimization of a dual N/P-LDMOS transistor 171
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs 168
Size Dependence of Surface-Roughness Limited Mobility in Silicon Nanowire FETs 160
Totale 3.479
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Categoria #
all - tutte 8.781
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.781
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022832 0 0 101 107 120 85 94 84 99 27 48 67
2022/2023324 45 49 13 40 24 10 15 14 55 4 43 12
2023/202460 9 19 5 4 3 1 6 3 0 1 7 2
2024/2025368 25 72 14 27 100 33 15 0 0 21 3 58
2025/2026698 26 40 83 42 124 52 64 16 147 47 33 24
2026/202776 18 32 26 0 0 0 0 0 0 0 0 0
Totale 3.479