POLI, STEFANO
 Distribuzione geografica
Continente #
NA - Nord America 1.505
EU - Europa 617
AS - Asia 160
AF - Africa 35
OC - Oceania 1
Totale 2.318
Nazione #
US - Stati Uniti d'America 1.501
GB - Regno Unito 177
DE - Germania 97
UA - Ucraina 96
IT - Italia 76
CN - Cina 68
IE - Irlanda 37
SE - Svezia 37
VN - Vietnam 37
IN - India 36
FR - Francia 30
RU - Federazione Russa 24
EE - Estonia 17
TG - Togo 15
ZA - Sudafrica 12
BE - Belgio 10
SG - Singapore 6
CA - Canada 4
NL - Olanda 4
SC - Seychelles 4
CH - Svizzera 3
CI - Costa d'Avorio 3
JP - Giappone 3
FI - Finlandia 2
PL - Polonia 2
TR - Turchia 2
BG - Bulgaria 1
DK - Danimarca 1
GR - Grecia 1
HK - Hong Kong 1
ID - Indonesia 1
IL - Israele 1
IR - Iran 1
KR - Corea 1
KZ - Kazakistan 1
LB - Libano 1
MD - Moldavia 1
NG - Nigeria 1
NO - Norvegia 1
NZ - Nuova Zelanda 1
TW - Taiwan 1
Totale 2.318
Città #
Ann Arbor 604
Southend 155
Fairfield 141
Wilmington 91
Ashburn 79
Woodbridge 78
Jacksonville 77
Houston 61
Chandler 59
Seattle 57
Cambridge 48
Princeton 42
Dong Ket 37
Dublin 37
Padova 18
Westminster 18
Turin 16
Lomé 15
Mülheim 14
Berlin 12
Shenyang 11
Bologna 10
Medford 10
Nanjing 10
Brussels 9
Jinan 8
Milan 8
Saint Petersburg 7
San Diego 7
Nanchang 5
San Venanzo 5
Changsha 4
Des Moines 4
Dortmund 4
Haikou 4
Hebei 4
Mahé 4
Taiyuan 4
Abidjan 3
Beijing 3
Olalla 3
Tokyo 3
Toronto 3
Verona 3
Chicago 2
Frankfurt Am Main 2
Fremont 2
Fuzhou 2
Guangzhou 2
Lanzhou 2
Lappeenranta 2
London 2
Monteprandone 2
New York 2
Norwalk 2
Redwood City 2
San Francisco 2
Shanghai 2
Tianjin 2
Vezzano 2
Aachen 1
Abeokuta 1
Almaty 1
Amsterdam 1
Ankara 1
Antwerp 1
Atlanta 1
Boardman 1
Bremen 1
Bühl 1
Central 1
Changchun 1
Chisinau 1
Cincinnati 1
Dearborn 1
Falls Church 1
Genzano Di Roma 1
Hsinchu 1
Hyderabad 1
Kunming 1
Los Angeles 1
Montreal 1
Plauen 1
San Jose 1
Singapore 1
Sofia 1
Surabaya 1
Taizhou 1
Tel Aviv 1
Torino 1
Ulan-ude 1
Washington 1
Zhengzhou 1
Totale 1.860
Nome #
Analysis of HCS in STI-based LDMOS transistors 193
Numerical investigation of the total SOA of trench field-plate LDMOS devices 154
Hot-carrier Stress induced degradation in Multi-STIFinger LDMOS: an experimental and numerical insight 154
Computational study of the ultimate scaling limits of CNT tunneling devices 149
Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight 141
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 139
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs 136
Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors 134
Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-based LDMOS Transistors 132
Investigation on the temperature dependence of the HCI effects in the rugged STI-based LDMOS transistor 120
Optimization and Analysis of the Dual n/p-LDMOS Device 120
Full Understanding of Hot-Carrier-Induced Degradation in STI-based LDMOS transistors in the Impact-Ionization Operating Regime 120
Post-processing of data generated by a chaotic pipelined ADC for the robust generation of perfectly random bitstreams 113
TCAD optimization of a dual N/P-LDMOS transistor 113
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials 112
Tight-binding and effective mass modeling of armchair carbon nanoribbon FETs 111
Tight-binding versus effective-mass modeling of carbon nanotube FETs 107
Size Dependence of Surface-Roughness Limited Mobility in Silicon Nanowire FETs 94
Totale 2.342
Categoria #
all - tutte 4.838
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.838


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020556 69 15 15 44 56 64 66 75 66 40 19 27
2020/2021296 66 18 13 23 4 15 1 26 31 21 22 56
2021/2022870 22 16 101 107 120 85 94 84 99 27 48 67
2022/2023324 45 49 13 40 24 10 15 14 55 4 43 12
2023/202460 9 19 5 4 3 1 6 3 0 1 7 2
2024/20255 5 0 0 0 0 0 0 0 0 0 0 0
Totale 2.342