BUSCEMI, FABRIZIO
 Distribuzione geografica
Continente #
NA - Nord America 1.008
EU - Europa 598
AS - Asia 246
AF - Africa 72
SA - Sud America 1
Totale 1.925
Nazione #
US - Stati Uniti d'America 1.007
GB - Regno Unito 216
CN - Cina 114
DE - Germania 93
VN - Vietnam 78
IT - Italia 73
IE - Irlanda 47
IN - India 45
TG - Togo 44
UA - Ucraina 38
SE - Svezia 37
FR - Francia 31
RU - Federazione Russa 27
EE - Estonia 24
ZA - Sudafrica 21
BE - Belgio 5
AT - Austria 3
KR - Corea 3
NG - Nigeria 3
PL - Polonia 3
SC - Seychelles 3
LB - Libano 2
BR - Brasile 1
CA - Canada 1
GR - Grecia 1
ID - Indonesia 1
IR - Iran 1
SG - Singapore 1
TN - Tunisia 1
TR - Turchia 1
Totale 1.925
Città #
Southend 202
Fairfield 161
Ashburn 101
Seattle 88
Woodbridge 86
Ann Arbor 85
Wilmington 76
Houston 63
Cambridge 62
Chandler 59
Princeton 51
Dong Ket 47
Dublin 47
Lomé 44
Westminster 24
Jacksonville 23
Padova 23
Turin 20
Nanjing 19
Berlin 15
Medford 15
Saint Petersburg 14
Shenyang 14
Jinan 13
Mülheim 12
San Diego 11
Changsha 9
Hebei 9
Dearborn 6
Modena 6
Nanchang 6
Brussels 5
San Francisco 5
Tianjin 5
Zhengzhou 5
Des Moines 4
Milan 4
Ningbo 4
Taizhou 4
Abeokuta 3
Bologna 3
Bremen 3
Jiaxing 3
Kunming 3
Lanzhou 3
London 3
Mahé 3
New Delhi 3
Norwalk 3
Chiswick 2
Frankfurt Am Main 2
Graz 2
Guangzhou 2
Hangzhou 2
Olalla 2
Orange 2
Andover 1
Beijing 1
Boardman 1
Buffalo 1
Cassano D'adda 1
Changchun 1
Chongqing 1
Fremont 1
Fuzhou 1
Haikou 1
Los Angeles 1
Montreal 1
Muizenberg 1
Paris 1
Quattro Castella 1
Reggio Nell'emilia 1
Sacramento 1
San Giovanni in Persiceto 1
San Venanzo 1
Shanghai 1
Taiyuan 1
Tunis 1
Ulan-ude 1
Verona 1
Wuhan 1
Zanjan 1
Totale 1.517
Nome #
A New Hopping Model for Transport in Chalcogenide Glasses 131
Multilevel modeling for charge transport in Ovonic chalcogenide materials and devices 111
Monte Carlo simulation of charge transport in amorphous chalcogenides 110
Band Calculation for the Hexagonal and FCC Chalcogenide Ge2Sb2Te5 106
Investigation of Charge Transport in Amorphous Ge2Sb2Te5 Using the Variable-Range Hopping Model 97
A Model for Charge Transport in Amorphous GST Based on a Modified Variable-Range Hopping Process 96
Novel 3D random-network model for threshold switching of phase-change memories 93
Electrical bistability in amorphous semiconductors: A basic analytical theory 90
Monte Carlo simulation of charge transport in amorphous chalcogenides 88
Modeling the Dynamic Self-Heating of PCM 87
Modeling of the voltage snap-back in amorphous-GST memory devices 85
Quantum Electronic Trap-to-Band Transitions in Chalcogenides Induced by Electron-Electron Interaction 84
Voltage Snapback in Amorphous-GST Memory Devices: Transport Model and Validation 83
Diffusion and high-frequency noise of electrons in amorphous semiconductors at low electric fields 82
Microscopic Description of the Inter-Trap Transitions in a-Chalcogenides 80
Hot-carrier trap-limited transport in switching chalcogenides 79
Time-dependent transport in amorphous semiconductors: Instability in the field-controlled regime 73
Hot-electron conduction in Ovonic materials 71
Current-Driven Monte Carlo Simulation of Conduction in Switching Chalcogenides 70
Monte Carlo simulation of charge transport in amorphous GST 60
Modeling of the oscillation decay in PCM 56
Simulation of Charge Transport in Ovonic Materials 47
Three-dimensional network model for charge transport in amorphous PCM devices 41
Transport in a 3D Network Using the Hydrodynamic Model 36
Quantum correlations in continuous-time quantum walks of two indistinguishable particles 2
Totale 1.958
Categoria #
all - tutte 3.444
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.444


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019136 0 0 0 14 1 23 9 2 11 33 12 31
2019/2020680 90 16 4 36 69 79 84 85 109 38 19 51
2020/2021262 70 24 3 14 3 13 1 13 18 22 9 72
2021/2022362 54 15 37 15 36 23 14 30 23 5 51 59
2022/2023396 35 78 16 44 21 16 17 17 65 3 53 31
2023/202434 7 21 6 0 0 0 0 0 0 0 0 0
Totale 1.958