statistiche ricercatore

Continente	#
NA - Nord America	1.529
AS - Asia	781
EU - Europa	531
AF - Africa	67
SA - Sud America	39
Continente sconosciuto - Info sul continente non disponibili	31
OC - Oceania	3
Totale	2.981

Nazione	#
US - Stati Uniti d'America	1.515
VN - Vietnam	229
SG - Singapore	225
CN - Cina	161
GB - Regno Unito	145
IT - Italia	93
DE - Germania	87
HK - Hong Kong	55
SE - Svezia	42
FR - Francia	35
IE - Irlanda	34
RU - Federazione Russa	33
CI - Costa d'Avorio	29
IN - India	25
BR - Brasile	20
ZA - Sudafrica	16
JP - Giappone	15
KR - Corea	14
BG - Bulgaria	13
JO - Giordania	13
TG - Togo	13
UA - Ucraina	13
EE - Estonia	12
AR - Argentina	9
CA - Canada	6
PH - Filippine	6
PL - Polonia	6
BD - Bangladesh	5
MX - Messico	5
NL - Olanda	5
EC - Ecuador	4
ID - Indonesia	4
IQ - Iraq	4
SC - Seychelles	4
TH - Thailandia	4
TW - Taiwan	4
AU - Australia	3
FI - Finlandia	3
HR - Croazia	3
PK - Pakistan	3
CO - Colombia	2
JM - Giamaica	2
LB - Libano	2
NG - Nigeria	2
PS - Palestinian Territory	2
SA - Arabia Saudita	2
A2 - ???statistics.table.value.countryCode.A2???	1
AT - Austria	1
BE - Belgio	1
BH - Bahrain	1
BY - Bielorussia	1
CL - Cile	1
DZ - Algeria	1
ES - Italia	1
GE - Georgia	1
HN - Honduras	1
IL - Israele	1
IR - Iran	1
MA - Marocco	1
MD - Moldavia	1
MW - Malawi	1
MY - Malesia	1
PY - Paraguay	1
QA - Qatar	1
RO - Romania	1
SI - Slovenia	1
TR - Turchia	1
UY - Uruguay	1
UZ - Uzbekistan	1
VE - Venezuela	1
Totale	2.951

Nome	#
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells	308
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform	284
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD	254
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps	249
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs	241
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs	228
Modeling approaches for band-structure calculation in III-V FET quantum wells	226
Impact of strain and interface traps on the performance of III-V nanowire TFETs	219
TFET-based inverter performance in the presence of traps and localized strain	219
Design guidelines for GaSb/InAs TFET exploiting strain and device size	206
Optimization of GaSb/InAs TFET exploiting different strain configurations	205
Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k · p	177
TFET inverter static and transient performances in presence of traps and localized strain	165
Totale	2.981

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	550	0	0	0	64	84	67	78	65	76	26	27	63
2022/2023	335	23	48	20	54	18	20	6	17	84	5	25	15
2023/2024	47	4	14	0	3	1	14	2	0	1	5	0	3
2024/2025	331	40	41	14	27	68	6	23	3	0	26	25	58
2025/2026	760	125	60	49	47	86	36	64	13	182	64	14	20
2026/2027	93	12	22	53	6	0	0	0	0	0	0	0	0
Totale													2.981

CRIS Current Research Information System