statistiche ricercatore

Continente	#
NA - Nord America	1.472
AS - Asia	768
EU - Europa	524
AF - Africa	67
SA - Sud America	34
Continente sconosciuto - Info sul continente non disponibili	31
OC - Oceania	3
Totale	2.899

Nazione	#
US - Stati Uniti d'America	1.462
VN - Vietnam	228
SG - Singapore	223
CN - Cina	156
GB - Regno Unito	142
IT - Italia	89
DE - Germania	87
HK - Hong Kong	53
SE - Svezia	42
FR - Francia	35
IE - Irlanda	34
RU - Federazione Russa	33
CI - Costa d'Avorio	29
IN - India	25
BR - Brasile	18
ZA - Sudafrica	16
JP - Giappone	15
KR - Corea	14
BG - Bulgaria	13
JO - Giordania	13
TG - Togo	13
UA - Ucraina	13
EE - Estonia	12
AR - Argentina	9
PH - Filippine	6
PL - Polonia	6
BD - Bangladesh	5
CA - Canada	5
NL - Olanda	5
IQ - Iraq	4
MX - Messico	4
SC - Seychelles	4
TW - Taiwan	4
AU - Australia	3
FI - Finlandia	3
HR - Croazia	3
ID - Indonesia	3
TH - Thailandia	3
EC - Ecuador	2
LB - Libano	2
NG - Nigeria	2
PK - Pakistan	2
PS - Palestinian Territory	2
SA - Arabia Saudita	2
A2 - ???statistics.table.value.countryCode.A2???	1
AT - Austria	1
BE - Belgio	1
BH - Bahrain	1
BY - Bielorussia	1
CL - Cile	1
CO - Colombia	1
DZ - Algeria	1
ES - Italia	1
GE - Georgia	1
IL - Israele	1
IR - Iran	1
JM - Giamaica	1
MA - Marocco	1
MD - Moldavia	1
MW - Malawi	1
MY - Malesia	1
PY - Paraguay	1
QA - Qatar	1
RO - Romania	1
SI - Slovenia	1
TR - Turchia	1
UY - Uruguay	1
UZ - Uzbekistan	1
VE - Venezuela	1
Totale	2.869

Nome	#
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells	295
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform	276
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD	249
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps	242
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs	232
Modeling approaches for band-structure calculation in III-V FET quantum wells	224
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs	221
Impact of strain and interface traps on the performance of III-V nanowire TFETs	214
TFET-based inverter performance in the presence of traps and localized strain	213
Optimization of GaSb/InAs TFET exploiting different strain configurations	202
Design guidelines for GaSb/InAs TFET exploiting strain and device size	200
Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k · p	172
TFET inverter static and transient performances in presence of traps and localized strain	159
Totale	2.899

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	677	29	11	87	64	84	67	78	65	76	26	27	63
2022/2023	335	23	48	20	54	18	20	6	17	84	5	25	15
2023/2024	47	4	14	0	3	1	14	2	0	1	5	0	3
2024/2025	331	40	41	14	27	68	6	23	3	0	26	25	58
2025/2026	760	125	60	49	47	86	36	64	13	182	64	14	20
2026/2027	11	11	0	0	0	0	0	0	0	0	0	0	0
Totale													2.899

CRIS Current Research Information System