statistiche ricercatore

Continente	#
NA - Nord America	1.453
AS - Asia	764
EU - Europa	513
AF - Africa	67
SA - Sud America	32
OC - Oceania	3
Continente sconosciuto - Info sul continente non disponibili	1
Totale	2.833

Nazione	#
US - Stati Uniti d'America	1.444
VN - Vietnam	228
SG - Singapore	223
CN - Cina	155
GB - Regno Unito	142
DE - Germania	87
IT - Italia	80
HK - Hong Kong	51
SE - Svezia	42
FR - Francia	35
IE - Irlanda	34
RU - Federazione Russa	33
CI - Costa d'Avorio	29
IN - India	25
BR - Brasile	17
ZA - Sudafrica	16
JP - Giappone	14
KR - Corea	14
BG - Bulgaria	13
JO - Giordania	13
TG - Togo	13
UA - Ucraina	13
EE - Estonia	12
AR - Argentina	8
PH - Filippine	6
PL - Polonia	6
BD - Bangladesh	5
NL - Olanda	5
CA - Canada	4
IQ - Iraq	4
MX - Messico	4
SC - Seychelles	4
TW - Taiwan	4
AU - Australia	3
FI - Finlandia	3
HR - Croazia	3
ID - Indonesia	3
TH - Thailandia	3
EC - Ecuador	2
LB - Libano	2
NG - Nigeria	2
PK - Pakistan	2
PS - Palestinian Territory	2
SA - Arabia Saudita	2
A2 - ???statistics.table.value.countryCode.A2???	1
AT - Austria	1
BH - Bahrain	1
BY - Bielorussia	1
CL - Cile	1
CO - Colombia	1
DZ - Algeria	1
ES - Italia	1
GE - Georgia	1
IL - Israele	1
IR - Iran	1
JM - Giamaica	1
MA - Marocco	1
MW - Malawi	1
MY - Malesia	1
PY - Paraguay	1
QA - Qatar	1
RO - Romania	1
SI - Slovenia	1
TR - Turchia	1
UY - Uruguay	1
UZ - Uzbekistan	1
VE - Venezuela	1
Totale	2.833

Nome	#
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells	288
Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform	275
A full-quantum simulation study of InGaAs NW MOSFETs including interface traps	242
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD	241
Impact of Strain on Tunneling Current and Threshold Voltage in III-V Nanowire TFETs	227
Modeling approaches for band-structure calculation in III-V FET quantum wells	223
Investigation of the combined effect of traps and strain on optimized n- and p-type TFETs	218
Impact of strain and interface traps on the performance of III-V nanowire TFETs	213
TFET-based inverter performance in the presence of traps and localized strain	211
Optimization of GaSb/InAs TFET exploiting different strain configurations	200
Design guidelines for GaSb/InAs TFET exploiting strain and device size	198
Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k · p	170
TFET inverter static and transient performances in presence of traps and localized strain	157
Totale	2.863

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	50	0	0	0	0	0	0	0	0	0	0	5	45
2021/2022	677	29	11	87	64	84	67	78	65	76	26	27	63
2022/2023	335	23	48	20	54	18	20	6	17	84	5	25	15
2023/2024	47	4	14	0	3	1	14	2	0	1	5	0	3
2024/2025	331	40	41	14	27	68	6	23	3	0	26	25	58
2025/2026	735	125	60	49	47	86	36	64	13	182	64	9	0
Totale													2.863

CRIS Current Research Information System