BUSCEMI, FABRIZIO
BUSCEMI, FABRIZIO
DIP. DI ELETTRONICA,INFORMATICA,SISTEMISTICA-DEIS
A Model for Charge Transport in Amorphous GST Based on a Modified Variable-Range Hopping Process
2009 Buscemi F.; Piccinini E.; Brunetti R.; Rudan M.; Jacoboni C.
A New Hopping Model for Transport in Chalcogenide Glasses
2009 Rudan M.; Giovanardi F.; Piccinini E.; Buscemi F.; Brunetti R.; Jacoboni C.
Band Calculation for the Hexagonal and FCC Chalcogenide Ge2Sb2Te5
2008 E. Piccinini; F. Buscemi; T. Tsafack; R. Brunetti; M. Rudan; C. Jacoboni
Current-Driven Monte Carlo Simulation of Conduction in Switching Chalcogenides
2011 E. Piccinini; F. Buscemi
Diffusion and high-frequency noise of electrons in amorphous semiconductors at low electric fields
2012 F. Buscemi; E. Piccinini; M. Rudan; R. Brunetti; C. Jacoboni
Electrical bistability in amorphous semiconductors: A basic analytical theory
2014 F. Buscemi; E. Piccinini; A. Cappelli; R. Brunetti; M. Rudan; C. Jacoboni
Hot-carrier trap-limited transport in switching chalcogenides
2012 E. Piccinini; A. Cappelli; F. Buscemi; R. Brunetti; D. Ielmini; M. Rudan; C. Jacoboni
Hot-electron conduction in Ovonic materials
2013 C. Jacoboni; E. Piccinini; F. Buscemi; A. Cappelli
Investigation of Charge Transport in Amorphous Ge2Sb2Te5 Using the Variable-Range Hopping Model
2009 Piccinini E.; Buscemi F.; Tsafack T.; Rudan M.; Brunetti R.; Jacoboni C.
Microscopic Description of the Inter-Trap Transitions in a-Chalcogenides
2013 M. Rudan; F. Giovanardi; R. Brunetti; F. Buscemi; G. Marcolini
Modeling of the oscillation decay in PCM
2013 G. Marcolini; F. Giovanardi; M. Rudan; F. Buscemi; E. Piccinini; R. Brunetti; A. Cappelli
Modeling of the voltage snap-back in amorphous-GST memory devices
2010 M. Rudan; F. Giovanardi; T. Tsafack; F. Xiong; E. Piccinini; F. Buscemi; A. Liao; E. Pop; R. Brunetti; C. Jacoboni
Modeling the Dynamic Self-Heating of PCM
2013 G. Marcolini; F. Giovanardi; M. Rudan; F. Buscemi; E. Piccinini; R. Brunetti; A. Cappelli
Monte Carlo simulation of charge transport in amorphous GST
2008 E. Piccinini; F. Buscemi; T. Tsafack; R. Brunetti; M. Rudan; C.Jacoboni
Monte Carlo simulation of charge transport in amorphous chalcogenides
2009 Piccinini E.; Buscemi F.; Rudan M.; Brunetti R.; Jacoboni C.
Monte Carlo simulation of charge transport in amorphous chalcogenides
2009 F. Buscemi; E. Piccinini; R. Brunetti; M. Rudan; C. Jacoboni
Multilevel modeling for charge transport in Ovonic chalcogenide materials and devices
2013 M. Rudan; F. Giovanardi; E. Piccinini; F. Buscemi; R. Brunetti; A. Cappelli; G. Marcolini; C. Jacoboni
Novel 3D random-network model for threshold switching of phase-change memories
2013 Enrico Piccinini; Andrea Cappelli; Feng Xiong; Ashkan Behnam; Fabrizio Buscemi; Rossella Brunetti; Massimo Rudan; Eric Pop; Carlo Jacoboni
Quantum Electronic Trap-to-Band Transitions in Chalcogenides Induced by Electron-Electron Interaction
2011 F. Buscemi; E. Piccinini; F. Giovanardi; M. Rudan; R. Brunetti; C. Jacoboni
Simulation of Charge Transport in Ovonic Materials
2013 A. Cappelli; E. Piccinini; F. Buscemi; R. Brunetti; M. Rudan; C. Jacoboni
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| A Model for Charge Transport in Amorphous GST Based on a Modified Variable-Range Hopping Process | Buscemi F.; Piccinini E.; Brunetti R.; Rudan M.; Jacoboni C. | 2009-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| A New Hopping Model for Transport in Chalcogenide Glasses | Rudan M.; Giovanardi F.; Piccinini E.; Buscemi F.; Brunetti R.; Jacoboni C. | 2009-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Band Calculation for the Hexagonal and FCC Chalcogenide Ge2Sb2Te5 | E. Piccinini; F. Buscemi; T. Tsafack; R. Brunetti; M. Rudan; C. Jacoboni | 2008-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Current-Driven Monte Carlo Simulation of Conduction in Switching Chalcogenides | E. Piccinini; F. Buscemi | 2011-01-01 | ACTA PHYSICA POLONICA A | - | 1.01 Articolo in rivista | - |
| Diffusion and high-frequency noise of electrons in amorphous semiconductors at low electric fields | F. Buscemi; E. Piccinini; M. Rudan; R. Brunetti; C. Jacoboni | 2012-01-01 | FLUCTUATION AND NOISE LETTERS | - | 1.01 Articolo in rivista | - |
| Electrical bistability in amorphous semiconductors: A basic analytical theory | F. Buscemi; E. Piccinini; A. Cappelli; R. Brunetti; M. Rudan; C. Jacoboni | 2014-01-01 | APPLIED PHYSICS LETTERS | - | 1.01 Articolo in rivista | - |
| Hot-carrier trap-limited transport in switching chalcogenides | E. Piccinini; A. Cappelli; F. Buscemi; R. Brunetti; D. Ielmini; M. Rudan; C. Jacoboni | 2012-01-01 | JOURNAL OF APPLIED PHYSICS | - | 1.01 Articolo in rivista | - |
| Hot-electron conduction in Ovonic materials | C. Jacoboni; E. Piccinini; F. Buscemi; A. Cappelli | 2013-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Investigation of Charge Transport in Amorphous Ge2Sb2Te5 Using the Variable-Range Hopping Model | Piccinini E.; Buscemi F.; Tsafack T.; Rudan M.; Brunetti R.; Jacoboni C. | 2009-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Microscopic Description of the Inter-Trap Transitions in a-Chalcogenides | M. Rudan; F. Giovanardi; R. Brunetti; F. Buscemi; G. Marcolini | 2013-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Modeling of the oscillation decay in PCM | G. Marcolini; F. Giovanardi; M. Rudan; F. Buscemi; E. Piccinini; R. Brunetti; A. Cappelli | 2013-01-01 | - | Micron | 4.02 Riassunto (Abstract) | - |
| Modeling of the voltage snap-back in amorphous-GST memory devices |
M. Rudan; F. Giovanardi; T. Tsafack; F. Xiong; E. Piccinini; F. Buscemi; A. Liao; E. Pop; R. Bru...netti; C. Jacoboni |
2010-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Modeling the Dynamic Self-Heating of PCM | G. Marcolini; F. Giovanardi; M. Rudan; F. Buscemi; E. Piccinini; R. Brunetti; A. Cappelli | 2013-01-01 | - | - | 4.01 Contributo in Atti di convegno | - |
| Monte Carlo simulation of charge transport in amorphous GST | E. Piccinini; F. Buscemi; T. Tsafack; R. Brunetti; M. Rudan; C.Jacoboni | 2008-01-01 | - | University of Pardubice | 4.01 Contributo in Atti di convegno | - |
| Monte Carlo simulation of charge transport in amorphous chalcogenides | Piccinini E.; Buscemi F.; Rudan M.; Brunetti R.; Jacoboni C. | 2009-01-01 | JOURNAL OF PHYSICS. CONFERENCE SERIES | - | 4.01 Contributo in Atti di convegno | - |
| Monte Carlo simulation of charge transport in amorphous chalcogenides | F. Buscemi; E. Piccinini; R. Brunetti; M. Rudan; C. Jacoboni | 2009-01-01 | JOURNAL OF APPLIED PHYSICS | - | 1.01 Articolo in rivista | - |
| Multilevel modeling for charge transport in Ovonic chalcogenide materials and devices | M. Rudan; F. Giovanardi; E. Piccinini; F. Buscemi; R. Brunetti; A. Cappelli; G. Marcolini; C. Jac...oboni | 2013-01-01 | JOURNAL OF COMPUTATIONAL ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Novel 3D random-network model for threshold switching of phase-change memories | Enrico Piccinini; Andrea Cappelli; Feng Xiong; Ashkan Behnam; Fabrizio Buscemi; Rossella Brunetti...; Massimo Rudan; Eric Pop; Carlo Jacoboni | 2013-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Quantum Electronic Trap-to-Band Transitions in Chalcogenides Induced by Electron-Electron Interaction | F. Buscemi; E. Piccinini; F. Giovanardi; M. Rudan; R. Brunetti; C. Jacoboni | 2011-01-01 | - | IEEE | 2.01 Capitolo / saggio in libro | - |
| Simulation of Charge Transport in Ovonic Materials | A. Cappelli; E. Piccinini; F. Buscemi; R. Brunetti; M. Rudan; C. Jacoboni | 2013-01-01 | - | - | 4.02 Riassunto (Abstract) | - |