GRASSI, ROBERTO
GRASSI, ROBERTO
CENTRO RICERCA SISTEMI ELETTRONICI INGEGN.INF. E TELECOM."ERCOLE DE CASTRO"
An investigation of performance limits of conventional and tunneling graphene-based transist
2009 R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback
2014 R. Grassi; A. Gnudi; V. Di Lecce; E. Gnani; S. Reggiani; G. Baccarani
Carbon-based Nanoelectronic Devices for High-Performance Logic Applications
2008 R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform
2013 E. Baravelli;E. Gnani;R. Grassi;A. Gnudi;S. Reggiani;G. Baccarani
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells
2016 Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele
Contact-induced negative differential resistance in short-channel graphene FETs
2013 Grassi, Roberto*; Low, Tony; Gnudi, Antonio; Baccarani, Giorgio
DC and small-signal numerical simulation of graphene base transistor for terahertz operation
2013 DI LECCE, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio
Efficient quantum mechanical simulation of band-to-band tunneling
2015 Alper, Cem; Palestri, Pierpaolo; Padilla, Jose L.; Gnudi, Antonio; Grassi, Roberto; Gnani, Elena; Luisier, Mathieu; Ionescu, Adrian M.
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains
2014 Roberto, Grassi; Antonio, Gnudi; Valerio Di, Lecce; Elena, Gnani; Susanna, Reggiani; Giorgio, Baccarani
Extracorporeal membrane oxygenation (ECMO) in COVID-19 patients: a pocket guide for radiologists
2022 Gabelloni, Michela; Faggioni, Lorenzo; Cioni, Dania; Mendola, Vincenzo; Falaschi, Zeno; Coppola, Sara; Corradi, Francesco; Isirdi, Alessandro; Brandi, Nicolò; Coppola, Francesca; Granata, Vincenza; Golfieri, Rita; Grassi, Roberto; Neri, Emanuele
Full-Quantum Calculations of Low-Field Channel Mobility in Graphene Nanoribbon FETs Including Acoustic Phonon Scattering and Edge Roughness Effects
2010 I. Imperiale; R. Grassi; A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani.
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics
2015 Di Lecce, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation
2013 Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani;Susanna Reggiani;Giorgio Baccarani
Graphene Nanoribbon FETs for High-Performance Logic Applications: Perspectives and Challenges
2008 R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation
2013 Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani;Susanna Reggiani;Giorgio Baccarani
Graphene-Based High-Performance Nanoelectronic Devices
2009 R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani
Hierarchical modeling of carbon nanoribbon devices for CNR-FETs engineering
2008 R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Cinacchi; G. Baccarani
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation
2014 Valerio, Di Lecce; Roberto, Grassi; Antonio, Gnudi; Elena, Gnani; Susanna, Reggiani; Giorgio, Baccarani
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model
2014 Maiorano, P.; Gnani, E.; Grassi, R.; Gnudi, A.; Reggiani, S.; Baccarani, G.
Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs
2011 R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| An investigation of performance limits of conventional and tunneling graphene-based transist | R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani | 2009-01-01 | JOURNAL OF COMPUTATIONAL ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback | R. Grassi; A. Gnudi; V. Di Lecce; E. Gnani; S. Reggiani; G. Baccarani | 2014-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Carbon-based Nanoelectronic Devices for High-Performance Logic Applications | R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani | 2008-01-01 | - | CLEUP | 4.01 Contributo in Atti di convegno | - |
| Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform | E. Baravelli;E. Gnani;R. Grassi;A. Gnudi;S. Reggiani;G. Baccarani | 2013-01-01 | - | IEEE Computer Society | 4.01 Contributo in Atti di convegno | - |
| Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells | Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, Dav...id; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele | 2016-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | Edit Comprehensive comparison.pdf |
| Contact-induced negative differential resistance in short-channel graphene FETs | Grassi, Roberto*; Low, Tony; Gnudi, Antonio; Baccarani, Giorgio | 2013-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| DC and small-signal numerical simulation of graphene base transistor for terahertz operation | DI LECCE, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, G...iorgio | 2013-01-01 | - | IEEE Computer Society | 4.01 Contributo in Atti di convegno | - |
| Efficient quantum mechanical simulation of band-to-band tunneling | Alper, Cem; Palestri, Pierpaolo; Padilla, Jose L.; Gnudi, Antonio; Grassi, Roberto; Gnani, Elena;... Luisier, Mathieu; Ionescu, Adrian M. | 2015-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains | Roberto, Grassi; Antonio, Gnudi; Valerio Di, Lecce; Elena, Gnani; Susanna, Reggiani; Giorgio, Bac...carani | 2014-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Extracorporeal membrane oxygenation (ECMO) in COVID-19 patients: a pocket guide for radiologists | Gabelloni, Michela; Faggioni, Lorenzo; Cioni, Dania; Mendola, Vincenzo; Falaschi, Zeno; Coppola, ...Sara; Corradi, Francesco; Isirdi, Alessandro; Brandi, Nicolò; Coppola, Francesca; Granata, Vincenza; Golfieri, Rita; Grassi, Roberto; Neri, Emanuele | 2022-01-01 | LA RADIOLOGIA MEDICA | - | 1.01 Articolo in rivista | 8. Gabelloni_Extracorporeal membrane oxygenation (ECMO) in COVID-19 patients a pocket guide for radiologists .pdf |
| Full-Quantum Calculations of Low-Field Channel Mobility in Graphene Nanoribbon FETs Including Acoustic Phonon Scattering and Edge Roughness Effects | I. Imperiale; R. Grassi; A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani. | 2010-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics | Di Lecce, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, G...iorgio | 2015-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation | Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani;Susanna Reggiani;Giorgio Baccarani | 2013-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Graphene Nanoribbon FETs for High-Performance Logic Applications: Perspectives and Challenges | R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani | 2008-01-01 | - | IEEE Press | 4.01 Contributo in Atti di convegno | - |
| Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation | Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani;Susanna Reggiani;Giorgio Baccarani | 2013-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Graphene-Based High-Performance Nanoelectronic Devices | R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani | 2009-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Hierarchical modeling of carbon nanoribbon devices for CNR-FETs engineering | R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Cinacchi; G. Baccarani | 2008-01-01 | - | IEEE Press | 4.01 Contributo in Atti di convegno | - |
| Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation | Valerio, Di Lecce; Roberto, Grassi; Antonio, Gnudi; Elena, Gnani; Susanna, Reggiani; Giorgio, Bac...carani | 2014-01-01 | - | Bez, R; Pavan, P; Meneghesso, G; | 4.01 Contributo in Atti di convegno | - |
| Investigation on the electrical properties of superlattice FETs using a non-parabolic band model | Maiorano, P.; Gnani, E.; Grassi, R.; Gnudi, A.; Reggiani, S.; Baccarani, G. | 2014-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |
| Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs | R. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani | 2011-01-01 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - | 1.01 Articolo in rivista | - |