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GRASSI, ROBERTO

GRASSI, ROBERTO  

CENTRO RICERCA SISTEMI ELETTRONICI INGEGN.INF. E TELECOM."ERCOLE DE CASTRO"  

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Risultati 1 - 20 di 33 (tempo di esecuzione: 0.027 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
Extracorporeal membrane oxygenation (ECMO) in COVID-19 patients: a pocket guide for radiologists Gabelloni, Michela; Faggioni, Lorenzo; Cioni, Dania; Mendola, Vincenzo; Falaschi, Zeno; Coppola, ...Sara; Corradi, Francesco; Isirdi, Alessandro; Brandi, Nicolò; Coppola, Francesca; Granata, Vincenza; Golfieri, Rita; Grassi, Roberto; Neri, Emanuele 2022-01-01 LA RADIOLOGIA MEDICA - 1.01 Articolo in rivista 8. Gabelloni_Extracorporeal membrane oxygenation (ECMO) in COVID-19 patients a pocket guide for radiologists .pdf
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, Dav...id; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele 2016-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista Edit Comprehensive comparison.pdf
Efficient quantum mechanical simulation of band-to-band tunneling Alper, Cem; Palestri, Pierpaolo; Padilla, Jose L.; Gnudi, Antonio; Grassi, Roberto; Gnani, Elena;... Luisier, Mathieu; Ionescu, Adrian M. 2015-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics Di Lecce, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, G...iorgio 2015-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
Modeling approaches for band-structure calculation in III-V FET quantum wells Caruso, Enrico; Zerveas, G.; Baccarani, Giorgio; Czornomaz, L.; Daix, N.; Esseni, David; Gnani, E...lena; Gnudi, Antonio; Grassi, Roberto; Luisier, M.; Markussen, T.; Palestri, P.; Schenk, A.; Selmi, L.; Sousa, M.; Stokbro, K.; Visciarelli, Michele 2015-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback R. Grassi; A. Gnudi; V. Di Lecce; E. Gnani; S. Reggiani; G. Baccarani 2014-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains Grassi, Roberto; Gnudi, Antonio; Valerio Di, Lecce; Gnani, Elena; Reggiani, Susanna; Baccarani, G...iorgio 2014-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation DI LECCE, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, G...iorgio 2014-01-01 - Bez, R; Pavan, P; Meneghesso, G; 4.01 Contributo in Atti di convegno -
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model Maiorano, P.; Gnani, E.; Grassi, R.; Gnudi, A.; Reggiani, S.; Baccarani, G. 2014-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -
Optimization of n-and p-type TFETs integrated on the same InAs/Al xGa1-xSb technology platform Baravelli, Emanuele; Gnani, Elena; Grassi, Roberto; Gnudi, Antonio; Reggiani, Susanna; Baccarani,... Giorgio 2014-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Semianalytical quantum model for graphene field-effect transistors Pugnaghi, Claudio; Grassi, Roberto; Gnudi, Antonio; Di Lecce, Valerio; Gnani, Elena; Reggiani, Su...sanna; Baccarani, Giorgio 2014-01-01 JOURNAL OF APPLIED PHYSICS - 1.01 Articolo in rivista -
Complementary n- and p-type TFETs on the same InAs/Al(0.05)Ga(0.95)Sb platform E. Baravelli;E. Gnani;R. Grassi;A. Gnudi;S. Reggiani;G. Baccarani 2013-01-01 - IEEE Computer Society 4.01 Contributo in Atti di convegno -
Contact-induced negative differential resistance in short-channel graphene FETs Grassi, Roberto*; Low, Tony; Gnudi, Antonio; Baccarani, Giorgio 2013-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
DC and small-signal numerical simulation of graphene base transistor for terahertz operation DI LECCE, Valerio; Grassi, Roberto; Gnudi, Antonio; Gnani, Elena; Reggiani, Susanna; Baccarani, G...iorgio 2013-01-01 - IEEE Computer Society 4.01 Contributo in Atti di convegno -
Graphene Base Transistors: A Simulation Study of DC and Small-Signal Operation Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani;Susanna Reggiani;Giorgio Baccarani 2013-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation Valerio Di Lecce;Roberto Grassi;Antonio Gnudi;Elena Gnani;Susanna Reggiani;Giorgio Baccarani 2013-01-01 IEEE TRANSACTIONS ON ELECTRON DEVICES - 1.01 Articolo in rivista -
Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering R. Grassi;A. Gnudi;I. Imperiale;E. Gnani;S. Reggiani;G. Baccarani 2013-01-01 JOURNAL OF APPLIED PHYSICS - 1.01 Articolo in rivista -
Non-parabolic band effects on the electrical properties of superlattice FETs P. Maiorano;E. Gnani;R. Grassi;A. Gnudi;S. Reggiani;G. Baccarani 2013-01-01 - - 4.01 Contributo in Atti di convegno -
Optimization of staggered heterojunction p-TFETs for LSTP and LOP applications Baravelli, Emanuele; Gnani, Elena; Grassi, Roberto; Gnudi, Antonio; Baccarani, Giorgio 2013-01-01 - IEEE 4.01 Contributo in Atti di convegno -
Negative differential resistance in short-channel graphene FETs: semianalytical model and simulations R. Grassi; T. Low; A. Gnudi; G. Baccarani 2012-01-01 - s.n 4.02 Riassunto (Abstract) -