The effect of non-parabolic energy-bands on the electrical properties of an InGaAs/InAlAs superlattice FET are investigated. We fitted an energy-dependent effectivemass on k·p simulation results and implemented the new band model into a self-consistent Schrödinger-Poisson solver. We show that non-parabolicity effects lead to noticeable changes of the device characteristics, namely: an increase of the on-state current and a steeper transition from the off to the on state, at the expense of an increased off-state current. Moreover, the larger density of states in the non-parabolic model causes a 47% growth of the output conductance at low VDS, as well as an increased drain conductance in saturation.
P. Maiorano, E. Gnani, R. Grassi, A. Gnudi, S. Reggiani, G. Baccarani (2013). Non-parabolic band effects on the electrical properties of superlattice FETs [10.1109/ULIS.2013.6523499].
Non-parabolic band effects on the electrical properties of superlattice FETs
MAIORANO, PASQUALE;GNANI, ELENA;GRASSI, ROBERTO;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2013
Abstract
The effect of non-parabolic energy-bands on the electrical properties of an InGaAs/InAlAs superlattice FET are investigated. We fitted an energy-dependent effectivemass on k·p simulation results and implemented the new band model into a self-consistent Schrödinger-Poisson solver. We show that non-parabolicity effects lead to noticeable changes of the device characteristics, namely: an increase of the on-state current and a steeper transition from the off to the on state, at the expense of an increased off-state current. Moreover, the larger density of states in the non-parabolic model causes a 47% growth of the output conductance at low VDS, as well as an increased drain conductance in saturation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
