The effect of non-parabolic energy-bands on the electrical properties of an InGaAs/InAlAs superlattice FET are investigated. We fitted an energy-dependent effectivemass on k·p simulation results and implemented the new band model into a self-consistent Schrödinger-Poisson solver. We show that non-parabolicity effects lead to noticeable changes of the device characteristics, namely: an increase of the on-state current and a steeper transition from the off to the on state, at the expense of an increased off-state current. Moreover, the larger density of states in the non-parabolic model causes a 47% growth of the output conductance at low VDS, as well as an increased drain conductance in saturation.
Non-parabolic band effects on the electrical properties of superlattice FETs / P. Maiorano;E. Gnani;R. Grassi;A. Gnudi;S. Reggiani;G. Baccarani. - STAMPA. - (2013), pp. 93-96. (Intervento presentato al convegno 2013 14th International Conference on Ultimate Integration on Silicon (ULIS) tenutosi a Coventry; United Kingdom nel 19-21 March 2013) [10.1109/ULIS.2013.6523499].
Non-parabolic band effects on the electrical properties of superlattice FETs
MAIORANO, PASQUALE;GNANI, ELENA;GRASSI, ROBERTO;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2013
Abstract
The effect of non-parabolic energy-bands on the electrical properties of an InGaAs/InAlAs superlattice FET are investigated. We fitted an energy-dependent effectivemass on k·p simulation results and implemented the new band model into a self-consistent Schrödinger-Poisson solver. We show that non-parabolicity effects lead to noticeable changes of the device characteristics, namely: an increase of the on-state current and a steeper transition from the off to the on state, at the expense of an increased off-state current. Moreover, the larger density of states in the non-parabolic model causes a 47% growth of the output conductance at low VDS, as well as an increased drain conductance in saturation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.