Effect of transverse quantization on the broken vs. staggered band lineup of InAs/Al(x)Ga(1-x)Sb TFETs is investigated, showing that cross-sections up to 10nm lead to staggered configurations for any value of the Al mole fraction x. Device performance is optimized as a function of cross-sectional size, Al content and possible source/channel underlap, while ensuring low standby power (LSTP) or low operating power (LOP) compatible off-current levels. Guidelines are provided and an “optimal” design is proposed which provides a minimum sub-threshold slope (SS) of 7.2 mV/dec along with a maximum on-state current (Ion) of 175μA/μm.
Baravelli, E., Gnani, E., Grassi, R., Gnudi, A., Baccarani, G. (2013). Optimization of staggered heterojunction p-TFETs for LSTP and LOP applications. IEEE [10.1109/DRC.2013.6633796].
Optimization of staggered heterojunction p-TFETs for LSTP and LOP applications
BARAVELLI, EMANUELE;GNANI, ELENA;GRASSI, ROBERTO;GNUDI, ANTONIO;BACCARANI, GIORGIO
2013
Abstract
Effect of transverse quantization on the broken vs. staggered band lineup of InAs/Al(x)Ga(1-x)Sb TFETs is investigated, showing that cross-sections up to 10nm lead to staggered configurations for any value of the Al mole fraction x. Device performance is optimized as a function of cross-sectional size, Al content and possible source/channel underlap, while ensuring low standby power (LSTP) or low operating power (LOP) compatible off-current levels. Guidelines are provided and an “optimal” design is proposed which provides a minimum sub-threshold slope (SS) of 7.2 mV/dec along with a maximum on-state current (Ion) of 175μA/μm.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
