Effect of transverse quantization on the broken vs. staggered band lineup of InAs/Al(x)Ga(1-x)Sb TFETs is investigated, showing that cross-sections up to 10nm lead to staggered configurations for any value of the Al mole fraction x. Device performance is optimized as a function of cross-sectional size, Al content and possible source/channel underlap, while ensuring low standby power (LSTP) or low operating power (LOP) compatible off-current levels. Guidelines are provided and an “optimal” design is proposed which provides a minimum sub-threshold slope (SS) of 7.2 mV/dec along with a maximum on-state current (Ion) of 175μA/μm.
Optimization of staggered heterojunction p-TFETs for LSTP and LOP applications / Baravelli, Emanuele; Gnani, Elena; Grassi, Roberto; Gnudi, Antonio; Baccarani, Giorgio. - STAMPA. - (2013), pp. 67-68. (Intervento presentato al convegno Device Research Conference tenutosi a Notre Dame, IN; United States nel 23-26 June 2013) [10.1109/DRC.2013.6633796].
Optimization of staggered heterojunction p-TFETs for LSTP and LOP applications
BARAVELLI, EMANUELE;GNANI, ELENA;GRASSI, ROBERTO;GNUDI, ANTONIO;BACCARANI, GIORGIO
2013
Abstract
Effect of transverse quantization on the broken vs. staggered band lineup of InAs/Al(x)Ga(1-x)Sb TFETs is investigated, showing that cross-sections up to 10nm lead to staggered configurations for any value of the Al mole fraction x. Device performance is optimized as a function of cross-sectional size, Al content and possible source/channel underlap, while ensuring low standby power (LSTP) or low operating power (LOP) compatible off-current levels. Guidelines are provided and an “optimal” design is proposed which provides a minimum sub-threshold slope (SS) of 7.2 mV/dec along with a maximum on-state current (Ion) of 175μA/μm.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
