We discuss the phenomenon of negative output differential resistance of short-channel graphene FETs at room temperature, whose physical origin arises from a transport-mode bottleneck induced by the contact-doped graphene. We outline a simple semianalytical model, based on semiclassical ballistic transport, which captures this effect and qualitatively reproduces results from the non-equilibrium Green's function approach (NEGF). We find that this effect is robust against phonon scattering.
R. Grassi, T. Low, A. Gnudi, G. Baccarani (2012). Negative differential resistance in short-channel graphene FETs: semianalytical model and simulations. UNIVERSITY PARK, PA : s.n [10.1109/DRC.2012.6256975].
Negative differential resistance in short-channel graphene FETs: semianalytical model and simulations
GRASSI, ROBERTO;GNUDI, ANTONIO;BACCARANI, GIORGIO
2012
Abstract
We discuss the phenomenon of negative output differential resistance of short-channel graphene FETs at room temperature, whose physical origin arises from a transport-mode bottleneck induced by the contact-doped graphene. We outline a simple semianalytical model, based on semiclassical ballistic transport, which captures this effect and qualitatively reproduces results from the non-equilibrium Green's function approach (NEGF). We find that this effect is robust against phonon scattering.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
