EMINENTE, SIMONE
 Distribuzione geografica
Continente #
NA - Nord America 1.007
EU - Europa 500
AS - Asia 180
AF - Africa 28
SA - Sud America 1
Totale 1.716
Nazione #
US - Stati Uniti d'America 1.006
GB - Regno Unito 165
VN - Vietnam 79
UA - Ucraina 73
DE - Germania 63
SE - Svezia 61
CN - Cina 57
IT - Italia 47
IN - India 27
FR - Francia 20
IE - Irlanda 19
RU - Federazione Russa 16
CI - Costa d'Avorio 13
BG - Bulgaria 12
EE - Estonia 9
ZA - Sudafrica 9
BE - Belgio 8
JP - Giappone 6
SC - Seychelles 6
SG - Singapore 6
JO - Giordania 5
CH - Svizzera 4
CA - Canada 1
CL - Cile 1
FI - Finlandia 1
GR - Grecia 1
PL - Polonia 1
Totale 1.716
Città #
Ann Arbor 481
Southend 135
Chandler 66
Dong Ket 65
Fairfield 60
Jacksonville 58
Ashburn 49
Wilmington 41
Seattle 37
Princeton 27
Cambridge 26
Woodbridge 23
Houston 21
Dublin 19
Abidjan 13
Nanjing 13
Padova 13
Westminster 13
Sofia 12
Berlin 10
Brussels 8
Medford 8
Mülheim 8
Verona 8
Saint Petersburg 7
Boardman 6
Mahé 6
Shenyang 6
Tokyo 6
Amman 5
Milan 5
San Diego 5
Bern 4
Dearborn 4
Jiaxing 4
Singapore 4
Turin 4
Des Moines 3
Hebei 3
Kunming 3
Nanchang 3
Olalla 3
Tianjin 3
Zhengzhou 3
Beijing 2
Bologna 2
Bühl 2
Cassano delle Murge 2
Changsha 2
Easton 2
Jinan 2
Lanzhou 2
London 2
Los Angeles 2
North Bergen 2
Taiyuan 2
Atlanta 1
Barrow in Furness 1
Council Bluffs 1
Frankfurt Am Main 1
Genzano Di Roma 1
Guangzhou 1
Haikou 1
Helsinki 1
Hongtong 1
Hyderabad 1
Islington 1
Ludwigshafen 1
Midland 1
Newbury Park 1
Ningbo 1
Norwalk 1
Paris 1
Plauen 1
Quzhou 1
Riva 1
Saint Charles 1
Shanghai 1
Turriaco 1
Totale 1.348
Nome #
An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation 156
A Monte-Carlo study of the role of scattering in deca-nanometer MOSFETs 156
Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: A Monte Carlo study 149
Small-signal Analysis of deca-nanometer bulk and SOI MOSFETs for Analog/Mixed-signal and RF applications using the Time-Dependent Monte Carlo Approach 139
An improved semiclassical Monte-Carlo appproach for nano-scale MOSFET simulation 137
Comparative analysis of the RF and noise performance of bulk and single-gate ultra-thin SOI MOSFETs by numerical simulation 135
Understandig quasi-ballistics trasport in nano-MOSFETS: Part II Technology scaling along the ITRS 133
Understandig Quasi-Ballistics Trasport in Nano-MOSFETS: Part I Scattering in the Channel and in the Drain 131
Analysis of Ballistic Transport in MOSFETs along the ITRS Roadmap 130
Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-Signal and RF applications 125
Ballistic effects in advanced MOSFETs along the Roadmap 120
Thermal analysis of nanoscale MOSFETs by 2D electro-thermal simulation 114
Comparison of BULK and Ultra-Thin Double Gate SOI MOSFETs for the 65 nm Technology Node: a Monte-Carlo Study 106
Totale 1.731
Categoria #
all - tutte 3.569
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.569


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020352 71 6 12 19 31 37 38 53 29 28 8 20
2020/2021271 48 16 7 12 3 25 1 12 24 9 17 97
2021/2022629 11 8 87 76 82 68 73 68 73 15 27 41
2022/2023258 24 43 16 20 15 17 4 10 60 1 21 27
2023/202460 7 12 7 4 5 12 8 0 1 1 0 3
2024/20257 7 0 0 0 0 0 0 0 0 0 0 0
Totale 1.731