Sfoglia per Autore
Processing effects on the electrical properties of defects in silicon
1989 Castaldini A.; Cavalcoli D.; Cavallini A.
Determination of minority-carrier diffusion length by integral properties of electron-beam-induced current profiles
1991 Cavalcoli D.; Cavallini A.; Castaldini A.
Analysis of ∑=3 and ∑=9 twin boundaries in three-crystal silicon ingots
1996 Castaldini A.; Cavalcoli D.; Cavallini A.; Martinelli G.; Palmeri D.; Parisini A.; Sartori G.
Degradation effects at aluminum-silicon schottky diodes
1998 Castaldini A.; Cavalcoli D.; Cavallini A.
Electrical characterization of as-grown and thermally treated 8 inches silicon wafers
1999 Castaldini A.; Cavalcoli D.; Cavallini A.; Pizzini S.; Susi E.
Determination of bulk and surface transport properties by photocurrent spectral measurements
2000 Castaldini A.; Cavalcoli D.; Cavallini A.
Surface damage in silicon substrates after the SiCl4 dry etch of a poly-Si film
2001 Susi E.; Castaldini A.; Cavalcoli D.; Cavallini A.
Surface photovoltage analysis of crystalline silicon for photovoltaic applications
2002 Castaldini A.; Cavalcoli D.; Cavallini A.; Rossi M.
Scanning Kelvin probe and surface photovoltage analysis of multicrystalline silicon
2002 Castaldini A.; Cavalcoli D.; Cavallini A.; Rossi M.
Characterisation of surface and near-surface regions in high-purity Cz Si
2002 Castaldini A.; Cavalcoli D.; Cavallini A.; Minarelli T.; Susi E.
Surface modifications in Si after rapid thermal annealing
2002 Castaldini A.; Cavalcoli D.; Cavallini A.; Jones D.; Palermo V.; Susi E.
Hydrogen-induced boron passivation in Cz Si
2002 Castaldini A.; Cavalcoli D.; Cavallini A.; Susi E.
Surface analyses of polycrystalline and Cz-Si wafers
2002 Castaldini A.; Cavalcoli D.; Cavallini A.; Rossi M.
Characterization of bulk and surface properties in semiconductors using non-contacting techniques
2003 Castaldini A.; Cavalcoli D.; Cavallini A.; Rossi M.
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs
2004 G. SALVIATI; F. ROSSI; N. ARMANI; M. PAVESI; M. MANFREDI; G. MENEGHESSO; E. ZANONI; A. CASTALDINI; CAVALLINI A.
Silicon Carbide for alpha, beta, ion and soft X-ray high performance detectors
2004 G. Bertuccio; S. Binetti; S. Caccia; R. Casiraghi; A. Castaldini; A. Cavallini; L.Rigutti; C. Lanzieri; A. Le Donne; F. Nava; S. Pizzini; E. Vittone.
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes
2004 S.Porro; S.Ferrero; F.Giorgis; C.F.Pirri; D.Perrone; U.Meotto; P.Mandracci; L.Scaltrito; G.Richieri; L.Merlin; A.Cavallini; A.Castaldini; M.Rossi
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs
2004 G. Verzellesi; A. Cavallini; A.F.Basile; A. Castaldini;C. Canali;
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels
2004 G. Meneghesso, S.Levada, E. Zanoni, G. Salviati,N. Armani, N.;F. Rossi, M. Pavesi, M. Manfredi,A. Cavallini,A. Castaldini, S. Du, I. Eliashevich, I
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs
2004 G. Verzellesi; A.F. Basile; A. Cavallini; A. Castaldini; A. Chini; C. Canali;
Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
---|---|---|---|---|---|---|
Processing effects on the electrical properties of defects in silicon | Castaldini A.; Cavalcoli D.; Cavallini A. | 1989-01-01 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - | 1.01 Articolo in rivista | - |
Determination of minority-carrier diffusion length by integral properties of electron-beam-induced current profiles | Cavalcoli D.; Cavallini A.; Castaldini A. | 1991-01-01 | JOURNAL OF APPLIED PHYSICS | - | 1.01 Articolo in rivista | - |
Analysis of ∑=3 and ∑=9 twin boundaries in three-crystal silicon ingots | Castaldini A.; Cavalcoli D.; Cavallini A.; Martinelli G.; Palmeri D.; Parisini A.; Sartori G. | 1996-01-01 | DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA | - | 1.01 Articolo in rivista | - |
Degradation effects at aluminum-silicon schottky diodes | Castaldini A.; Cavalcoli D.; Cavallini A. | 1998-01-01 | ELECTROCHEMICAL AND SOLID-STATE LETTERS | - | 1.01 Articolo in rivista | - |
Electrical characterization of as-grown and thermally treated 8 inches silicon wafers | Castaldini A.; Cavalcoli D.; Cavallini A.; Pizzini S.; Susi E. | 1999-01-01 | DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA | - | 1.01 Articolo in rivista | - |
Determination of bulk and surface transport properties by photocurrent spectral measurements | Castaldini A.; Cavalcoli D.; Cavallini A. | 2000-01-01 | APPLIED PHYSICS. A, MATERIALS SCIENCE & PROCESSING | - | 1.01 Articolo in rivista | - |
Surface damage in silicon substrates after the SiCl4 dry etch of a poly-Si film | Susi E.; Castaldini A.; Cavalcoli D.; Cavallini A. | 2001-01-01 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - | 1.01 Articolo in rivista | - |
Surface photovoltage analysis of crystalline silicon for photovoltaic applications | Castaldini A.; Cavalcoli D.; Cavallini A.; Rossi M. | 2002-01-01 | SOLAR ENERGY MATERIALS AND SOLAR CELLS | - | 1.01 Articolo in rivista | - |
Scanning Kelvin probe and surface photovoltage analysis of multicrystalline silicon | Castaldini A.; Cavalcoli D.; Cavallini A.; Rossi M. | 2002-01-01 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - | 1.01 Articolo in rivista | - |
Characterisation of surface and near-surface regions in high-purity Cz Si | Castaldini A.; Cavalcoli D.; Cavallini A.; Minarelli T.; Susi E. | 2002-01-01 | DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA | - | 1.01 Articolo in rivista | - |
Surface modifications in Si after rapid thermal annealing | Castaldini A.; Cavalcoli D.; Cavallini A.; Jones D.; Palermo V.; Susi E. | 2002-01-01 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - | 1.01 Articolo in rivista | - |
Hydrogen-induced boron passivation in Cz Si | Castaldini A.; Cavalcoli D.; Cavallini A.; Susi E. | 2002-01-01 | APPLIED PHYSICS. A, MATERIALS SCIENCE & PROCESSING | - | 1.01 Articolo in rivista | - |
Surface analyses of polycrystalline and Cz-Si wafers | Castaldini A.; Cavalcoli D.; Cavallini A.; Rossi M. | 2002-01-01 | SOLAR ENERGY MATERIALS AND SOLAR CELLS | - | 1.01 Articolo in rivista | - |
Characterization of bulk and surface properties in semiconductors using non-contacting techniques | Castaldini A.; Cavalcoli D.; Cavallini A.; Rossi M. | 2003-01-01 | - | - | 4.01 Contributo in Atti di convegno | - |
Influence of long-term DC-aging and high power electron beam irradiation on the electrical and optical properties of InGaN LEDs | G. SALVIATI; F. ROSSI; N. ARMANI; M. PAVESI; M. MANFREDI; G. MENEGHESSO; E. ZANONI; A. CASTALDINI...; CAVALLINI A. | 2004-01-01 | THE EUROPEAN PHYSICAL JOURNAL. APPLIED PHYSICS | - | 1.01 Articolo in rivista | - |
Silicon Carbide for alpha, beta, ion and soft X-ray high performance detectors | G. Bertuccio; S. Binetti; S. Caccia; R. Casiraghi; A. Castaldini; A. Cavallini; L.Rigutti; C. Lan...zieri; A. Le Donne; F. Nava; S. Pizzini; E. Vittone. | 2004-01-01 | MATERIALS SCIENCE FORUM | - | 4.01 Contributo in Atti di convegno | - |
Defect influence on the electrcal properties of 4H-SiC Schottky Diodes | S.Porro; S.Ferrero; F.Giorgis; C.F.Pirri; D.Perrone; U.Meotto; P.Mandracci; L.Scaltrito; G.Richie...ri; L.Merlin; A.Cavallini; A.Castaldini; M.Rossi | 2004-01-01 | - | Trans Tech Publications Limited | 2.01 Capitolo / saggio in libro | - |
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs | G. Verzellesi; A. Cavallini; A.F.Basile; A. Castaldini;C. Canali; | 2004-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | - |
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels | G. Meneghesso, S.Levada, E. Zanoni, G. Salviati,N. Armani, N.;F. Rossi, M. Pavesi, M. Manfredi,A.... Cavallini,A. Castaldini, S. Du, I. Eliashevich, I | 2004-01-01 | - | IEEE International | 4.01 Contributo in Atti di convegno | - |
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs | G. Verzellesi; A.F. Basile; A. Cavallini; A. Castaldini; A. Chini; C. Canali; | 2004-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | - |
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