MAIORANO, PASQUALE
 Distribuzione geografica
Continente #
NA - Nord America 778
EU - Europa 292
AS - Asia 84
AF - Africa 27
OC - Oceania 2
SA - Sud America 2
Totale 1.185
Nazione #
US - Stati Uniti d'America 777
GB - Regno Unito 97
DE - Germania 50
CN - Cina 41
IT - Italia 31
SE - Svezia 25
UA - Ucraina 23
IN - India 18
RU - Federazione Russa 16
FR - Francia 13
IE - Irlanda 13
TG - Togo 11
ZA - Sudafrica 11
BG - Bulgaria 9
JO - Giordania 9
VN - Vietnam 9
EE - Estonia 6
CI - Costa d'Avorio 3
AU - Australia 2
BE - Belgio 2
CH - Svizzera 2
CL - Cile 2
LB - Libano 2
SG - Singapore 2
AT - Austria 1
CA - Canada 1
CZ - Repubblica Ceca 1
GR - Grecia 1
JP - Giappone 1
LU - Lussemburgo 1
NG - Nigeria 1
NL - Olanda 1
SA - Arabia Saudita 1
SC - Seychelles 1
TR - Turchia 1
Totale 1.185
Città #
Ann Arbor 307
Southend 84
Fairfield 81
Ashburn 58
Wilmington 45
Houston 42
Chandler 34
Woodbridge 34
Seattle 32
Cambridge 28
Princeton 21
Dublin 13
Jacksonville 13
Lomé 11
Amman 9
Bremen 9
Dong Ket 9
Nanjing 9
Padova 9
Sofia 9
Westminster 9
Turin 8
Medford 6
Berlin 5
Changsha 5
Bologna 4
Los Angeles 4
Mülheim 4
Saint Petersburg 4
Abidjan 3
Hebei 3
Jinan 3
San Diego 3
San Venanzo 3
Tianjin 3
Beijing 2
Boardman 2
Brussels 2
Kunming 2
Lanzhou 2
Nanchang 2
Ningbo 2
Redwood City 2
Shenyang 2
Taiyuan 2
Aachen 1
Abeokuta 1
Bern 1
Canberra 1
Dearborn 1
Enschede 1
Falls Church 1
Forlì 1
Fremont 1
Fuzhou 1
Guangzhou 1
Jiaxing 1
Las Vegas 1
Lausanne 1
London 1
Mahé 1
Milan 1
Monteprandone 1
Muizenberg 1
New York 1
Norwalk 1
Olalla 1
Paris 1
Plauen 1
Silverton 1
Sydney 1
Tallinn 1
Tappahannock 1
Tokyo 1
Tomsk 1
Toronto 1
Vienna 1
Zhengzhou 1
Totale 977
Nome #
Investigation on the electrical properties of superlattice FETs using a non-parabolic band model 174
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs 162
An investigation on steep-slope and low-power nanowire FETs 132
Steep-slope devices: Prospects and challenges 129
Effects of Dit-induced degradation on InGaAs/InAlAs nanowire superlattice-FET using Al2O3 and HfO2/La2O3 as gate stacks 125
Gate stack optimization to minimize power consumption in super-lattice FETs 123
Performance Limits of Superlattice-Based Steep-Slope Nanowire FETs 122
Design and optimization of impurity- and electrostatically-doped superlattice FETs to meet all the ITRS power targets at VDD=0.4V 114
Non-parabolic band effects on the electrical properties of superlattice FETs 114
Totale 1.195
Categoria #
all - tutte 2.477
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.477


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020316 40 6 4 17 36 34 42 47 47 14 19 10
2020/2021112 30 8 11 9 0 3 1 4 23 2 2 19
2021/2022453 10 1 67 49 63 44 46 46 49 16 26 36
2022/2023195 23 22 8 31 9 9 8 8 36 4 23 14
2023/202431 2 3 6 1 1 10 3 2 0 1 2 0
2024/20252 2 0 0 0 0 0 0 0 0 0 0 0
Totale 1.195