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EnglishIn this work we investigate by numerical simulation the achievable performance of a steep-slope nanowire FET based on the filtering of the high-energy electrons by a superlattice heterostructure in the source extension. After a preliminary study aimed to identify the most promising material pairs for the superlattice with respect to the typical FET evaluation metrics, we concentrate on a superlattice-based FET employing the InGaAs-InAlAs pair, which provides a good switching slope and an excellent on-current. The device optimization leads to a prediction of an inverse SS = 35 mV/dec and an on-current exceeding 2.3 mA/μm at a supply voltage of 400 mV.
| Titolo: | An investigation on steep-slope and low-power nanowire FETs |
| Autore/i: | GNANI, ELENA; MAIORANO, PASQUALE; REGGIANI, SUSANNA; GNUDI, ANTONIO; BACCARANI, GIORGIO |
| Autore/i Unibo: | |
| Anno: | 2011 |
| Titolo del libro: | Proceedings of the 41st European Solid-State Device Research Conference |
| Pagina iniziale: | 299 |
| Pagina finale: | 302 |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/ES10.1109/ESSDERC.2011.6044175 |
| Abstract: | In this work we investigate by numerical simulation the achievable performance of a steep-slope nanowire FET based on the filtering of the high-energy electrons by a superlattice heterostructure in the source extension. After a preliminary study aimed to identify the most promising material pairs for the superlattice with respect to the typical FET evaluation metrics, we concentrate on a superlattice-based FET employing the InGaAs-InAlAs pair, which provides a good switching slope and an excellent on-current. The device optimization leads to a prediction of an inverse SS = 35 mV/dec and an on-current exceeding 2.3 mA/μm at a supply voltage of 400 mV. |
| Data prodotto definitivo in UGOV: | 27-giu-2013 |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
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