In this work we investigate the effects of different interface trap density distributions (Dit) on the electrical and power performances of a Gate-All-Around In0.53Ga0.47As/In0.52Al0.48As Nanowire Superlattice-FETs (GAA NW SL-FET) using Al2O3 and HfO2/La2O3 as gate dielectrics. This analysis shows that a high At content at the high-K/InGaAs interface causes degradation of the subthreshold characteristics and drive current, but also an improvement of the OFF-state leakage. However, even in the presence of traps, dynamic energy/power consumption of the Al2O3-based SL-FET is predicted to be at least 2× lower than all the ITRS requirements for the 9nm technology node, while HfO2/La2O3-based device is perfectly suitably for Low-Standby-Power application, at fixed supply voltage Vdd = 0.4 V.
Effects of Dit-induced degradation on InGaAs/InAlAs nanowire superlattice-FET using Al2O3 and HfO2/La2O3 as gate stacks / Maiorano, P.; Gnani, E.; Gnudi, A.; Reggiani, S.; Baccarani, G.. - STAMPA. - (2015), pp. 7063772.57-7063772.60. (Intervento presentato al convegno 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 tenutosi a ita nel 2015) [10.1109/ULIS.2015.7063772].
Effects of Dit-induced degradation on InGaAs/InAlAs nanowire superlattice-FET using Al2O3 and HfO2/La2O3 as gate stacks
MAIORANO, PASQUALE;GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2015
Abstract
In this work we investigate the effects of different interface trap density distributions (Dit) on the electrical and power performances of a Gate-All-Around In0.53Ga0.47As/In0.52Al0.48As Nanowire Superlattice-FETs (GAA NW SL-FET) using Al2O3 and HfO2/La2O3 as gate dielectrics. This analysis shows that a high At content at the high-K/InGaAs interface causes degradation of the subthreshold characteristics and drive current, but also an improvement of the OFF-state leakage. However, even in the presence of traps, dynamic energy/power consumption of the Al2O3-based SL-FET is predicted to be at least 2× lower than all the ITRS requirements for the 9nm technology node, while HfO2/La2O3-based device is perfectly suitably for Low-Standby-Power application, at fixed supply voltage Vdd = 0.4 V.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
