A new analytical model for the electron and hole low-field mobility in ultra-thin body structures with differently-oriented channels and accounting for the effects of high- stacks, metal gates and complex stress configurations has been developed and calibrated on planar FETs. The new model is used to compute the effective mobility of non-planar Fin- FETs averaging the top- and sidewall-channel mobilities. A good agreement with a wide number of experiments is achieved.
L. Silvestri, S. Reggiani, A. Gnudi, E. Gnani, G. Baccarani. (2010). Mobility Model for Electrons and Holes in FinFETs with High-k Stacks, Metal Gate and Stress. GLASGOW, SCOTLAND : s.n.
Mobility Model for Electrons and Holes in FinFETs with High-k Stacks, Metal Gate and Stress
SILVESTRI, LUCA;REGGIANI, SUSANNA;GNUDI, ANTONIO;GNANI, ELENA;BACCARANI, GIORGIO
2010
Abstract
A new analytical model for the electron and hole low-field mobility in ultra-thin body structures with differently-oriented channels and accounting for the effects of high- stacks, metal gates and complex stress configurations has been developed and calibrated on planar FETs. The new model is used to compute the effective mobility of non-planar Fin- FETs averaging the top- and sidewall-channel mobilities. A good agreement with a wide number of experiments is achieved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
