Atomistic tight-binding real space and mode space models are used to investigate the key design parameters of graphene nanoribbon tunneling transistors. For an ideal NA = 12 nanoribbon FET, a 1890 uA/um ON current and an ON/OFF current ratio in excess of 10^5 can be achieved with VDD = 0.4V. The effect of edge roughness is also investigated showing a deterioration of the device performance, in particular in the OFF state, and high device variability.
R. Grassi, A. Gnudi, S. Reggiani, E. Gnani, G. Baccarani (2009). Simulation Study of Graphene Nanoribbon Tunneling Transistors Including Edge Roughness Effects. AACHEN : s.n [10.1109/ULIS.2009.4897538].
Simulation Study of Graphene Nanoribbon Tunneling Transistors Including Edge Roughness Effects
GRASSI, ROBERTO;GNUDI, ANTONIO;REGGIANI, SUSANNA;GNANI, ELENA;BACCARANI, GIORGIO
2009
Abstract
Atomistic tight-binding real space and mode space models are used to investigate the key design parameters of graphene nanoribbon tunneling transistors. For an ideal NA = 12 nanoribbon FET, a 1890 uA/um ON current and an ON/OFF current ratio in excess of 10^5 can be achieved with VDD = 0.4V. The effect of edge roughness is also investigated showing a deterioration of the device performance, in particular in the OFF state, and high device variability.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
