Carbon-based Nanoelectronic Devices for High-Performance Logic Applications

In this paper we investigate the performance limits of graphene nanoribbon (GNR) FETs for high-performance and low-power logic applications. The huge graphene carrier mobility, made possible by both the small effective mass and the weak electron-phonon interaction even at room temperature, makes it conceivable to work out high-performance GNR-FETs, virtually not affected by short-channel effects and operating under ballistic conditions at low supply voltages. Simulations of narrow GNR-FETs confirm the high potential of these devices, but highlight at the same time leakage problems due to various band-to-band and source-to-drain tunneling mechanisms which occur at low and negative gate voltages. The low-voltage operation allows for smaller bandgap materials. These effects can possibly be contained by a careful device optimization and/or devising novel FET structures.