In this paper we investigate the performance limits of graphene nanoribbon (GNR) FETs for high-performance and low-power logic applications. The huge graphene carrier mobility, made possible by both the small effective mass and the weak electron-phonon interaction even at room temperature, makes it conceivable to work out high-performance GNR-FETs, virtually not affected by short-channel effects and operating under ballistic conditions at low supply voltages. Simulations of narrow GNR-FETs confirm the high potential of these devices, but highlight at the same time leakage problems due to various band-to-band and source-to-drain tunneling mechanisms which occur at low and negative gate voltages. The low-voltage operation allows for smaller bandgap materials. These effects can possibly be contained by a careful device optimization and/or devising novel FET structures.
R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, G. Baccarani (2008). Carbon-based Nanoelectronic Devices for High-Performance Logic Applications. VENICE : CLEUP.
Carbon-based Nanoelectronic Devices for High-Performance Logic Applications
GRASSI, ROBERTO;GNUDI, ANTONIO;GNANI, ELENA;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2008
Abstract
In this paper we investigate the performance limits of graphene nanoribbon (GNR) FETs for high-performance and low-power logic applications. The huge graphene carrier mobility, made possible by both the small effective mass and the weak electron-phonon interaction even at room temperature, makes it conceivable to work out high-performance GNR-FETs, virtually not affected by short-channel effects and operating under ballistic conditions at low supply voltages. Simulations of narrow GNR-FETs confirm the high potential of these devices, but highlight at the same time leakage problems due to various band-to-band and source-to-drain tunneling mechanisms which occur at low and negative gate voltages. The low-voltage operation allows for smaller bandgap materials. These effects can possibly be contained by a careful device optimization and/or devising novel FET structures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.